DE2416394C3 - Verfahren zur Herstellung von Grünlicht emittierenden Galliumphosphid-Elektrolumineszenzdioden - Google Patents

Verfahren zur Herstellung von Grünlicht emittierenden Galliumphosphid-Elektrolumineszenzdioden

Info

Publication number
DE2416394C3
DE2416394C3 DE2416394A DE2416394A DE2416394C3 DE 2416394 C3 DE2416394 C3 DE 2416394C3 DE 2416394 A DE2416394 A DE 2416394A DE 2416394 A DE2416394 A DE 2416394A DE 2416394 C3 DE2416394 C3 DE 2416394C3
Authority
DE
Germany
Prior art keywords
gallium phosphide
solution
substrate
temperature
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2416394A
Other languages
German (de)
English (en)
Other versions
DE2416394A1 (de
DE2416394B2 (de
Inventor
Masami Yokohama Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2416394A1 publication Critical patent/DE2416394A1/de
Publication of DE2416394B2 publication Critical patent/DE2416394B2/de
Application granted granted Critical
Publication of DE2416394C3 publication Critical patent/DE2416394C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE2416394A 1973-04-04 1974-04-04 Verfahren zur Herstellung von Grünlicht emittierenden Galliumphosphid-Elektrolumineszenzdioden Expired DE2416394C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3848373A JPS5325634B2 (enExample) 1973-04-04 1973-04-04

Publications (3)

Publication Number Publication Date
DE2416394A1 DE2416394A1 (de) 1974-10-17
DE2416394B2 DE2416394B2 (de) 1980-01-10
DE2416394C3 true DE2416394C3 (de) 1985-03-14

Family

ID=12526490

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2416394A Expired DE2416394C3 (de) 1973-04-04 1974-04-04 Verfahren zur Herstellung von Grünlicht emittierenden Galliumphosphid-Elektrolumineszenzdioden

Country Status (7)

Country Link
US (1) US3935039A (enExample)
JP (1) JPS5325634B2 (enExample)
CA (1) CA1022440A (enExample)
DE (1) DE2416394C3 (enExample)
FR (1) FR2224876B1 (enExample)
GB (1) GB1427484A (enExample)
IT (1) IT1004087B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4154630A (en) * 1975-01-07 1979-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
FR2297494A1 (fr) * 1975-01-07 1976-08-06 Radiotechnique Compelec Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
US5707891A (en) * 1989-04-28 1998-01-13 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode
CN113750951B (zh) * 2021-09-14 2023-08-22 东莞理工学院 一种具备高效选择性的氮化磷制备方法及在除铀污染及海水提铀中的应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617820A (en) * 1966-11-18 1971-11-02 Monsanto Co Injection-luminescent diodes
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
GB1332994A (en) * 1971-01-11 1973-10-10 Mullard Ltd Method of diffusing an impurity into a semiconductor body
US3725749A (en) * 1971-06-30 1973-04-03 Monsanto Co GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES
JPS4984385A (enExample) * 1972-12-18 1974-08-13

Also Published As

Publication number Publication date
FR2224876A1 (enExample) 1974-10-31
DE2416394A1 (de) 1974-10-17
JPS49126288A (enExample) 1974-12-03
JPS5325634B2 (enExample) 1978-07-27
US3935039A (en) 1976-01-27
IT1004087B (it) 1976-07-10
CA1022440A (en) 1977-12-13
GB1427484A (en) 1976-03-10
FR2224876B1 (enExample) 1978-01-13
DE2416394B2 (de) 1980-01-10

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Legal Events

Date Code Title Description
8228 New agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8281 Inventor (new situation)

Free format text: BEPPU, TATSURO, TOKIO/TOKYO, JP IWAMOTO, MASAMI, YOKOHAMA, JP SEKIWA, TETSUO, KAWASAKI, JP

C3 Grant after two publication steps (3rd publication)
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP