DE2408235A1 - Verfahren zur herstellung einer halbleiter-sonnenzelle - Google Patents

Verfahren zur herstellung einer halbleiter-sonnenzelle

Info

Publication number
DE2408235A1
DE2408235A1 DE19742408235 DE2408235A DE2408235A1 DE 2408235 A1 DE2408235 A1 DE 2408235A1 DE 19742408235 DE19742408235 DE 19742408235 DE 2408235 A DE2408235 A DE 2408235A DE 2408235 A1 DE2408235 A1 DE 2408235A1
Authority
DE
Germany
Prior art keywords
metal
layer
reflective
mask
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19742408235
Other languages
German (de)
English (en)
Inventor
Robert John Dendall
Akos George Revesz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Comsat Corp
Original Assignee
Comsat Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comsat Corp filed Critical Comsat Corp
Publication of DE2408235A1 publication Critical patent/DE2408235A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
DE19742408235 1973-08-22 1974-02-21 Verfahren zur herstellung einer halbleiter-sonnenzelle Ceased DE2408235A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US390672A US3904453A (en) 1973-08-22 1973-08-22 Fabrication of silicon solar cell with anti reflection film

Publications (1)

Publication Number Publication Date
DE2408235A1 true DE2408235A1 (de) 1975-02-27

Family

ID=23543449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742408235 Ceased DE2408235A1 (de) 1973-08-22 1974-02-21 Verfahren zur herstellung einer halbleiter-sonnenzelle

Country Status (11)

Country Link
US (1) US3904453A (enExample)
JP (2) JPS5046492A (enExample)
AU (1) AU476141B2 (enExample)
BE (1) BE810947A (enExample)
CA (1) CA1030380A (enExample)
DE (1) DE2408235A1 (enExample)
FR (1) FR2241880B1 (enExample)
GB (1) GB1452633A (enExample)
IT (1) IT1011730B (enExample)
NL (1) NL7405995A (enExample)
SE (1) SE386012B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3131958A1 (de) * 1981-08-13 1983-02-24 Solarex Corp., 14001 Rockville, Md. Verfahren zur bildung eines antireflektionsueberzuges auf der oberflaeche von sonnenenergiezellen.

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165774U (enExample) * 1974-11-20 1976-05-24
US4347264A (en) * 1975-09-18 1982-08-31 Solarex Corporation Method of applying contacts to a silicon wafer and product formed thereby
US4098917A (en) * 1976-09-08 1978-07-04 Texas Instruments Incorporated Method of providing a patterned metal layer on a substrate employing metal mask and ion milling
US4201798A (en) * 1976-11-10 1980-05-06 Solarex Corporation Method of applying an antireflective coating to a solar cell
US4156622A (en) * 1976-11-10 1979-05-29 Solarex Corporation Tantalum oxide antireflective coating and method of forming same
US4297391A (en) * 1979-01-16 1981-10-27 Solarex Corporation Method of applying electrical contacts to a photovoltaic cell
US4228446A (en) * 1979-05-10 1980-10-14 Rca Corporation Reduced blooming device having enhanced quantum efficiency
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
US4359487A (en) * 1980-07-11 1982-11-16 Exxon Research And Engineering Co. Method for applying an anti-reflection coating to a solar cell
US4336295A (en) * 1980-12-22 1982-06-22 Eastman Kodak Company Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device
US4328260A (en) * 1981-01-23 1982-05-04 Solarex Corporation Method for applying antireflective coating on solar cell
JPS5829069U (ja) * 1981-08-18 1983-02-25 株式会社佐文工業所 ミシンの全回転釜の内釜押え
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US20080041443A1 (en) * 2006-08-16 2008-02-21 Hnuphotonics Thinned solar cell
CN102593243A (zh) * 2007-08-31 2012-07-18 费罗公司 用于太阳能电池的分层触点结构
US7784917B2 (en) 2007-10-03 2010-08-31 Lexmark International, Inc. Process for making a micro-fluid ejection head structure
US20090139868A1 (en) * 2007-12-03 2009-06-04 Palo Alto Research Center Incorporated Method of Forming Conductive Lines and Similar Features
US8008574B2 (en) * 2008-06-03 2011-08-30 Hamilton Sundstrand Corporation Photo cell with spaced anti-oxidation member on fluid loop
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
TWI431790B (zh) * 2011-09-01 2014-03-21 Gintech Energy Corp 太陽能電池

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3135638A (en) * 1960-10-27 1964-06-02 Hughes Aircraft Co Photochemical semiconductor mesa formation
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3533850A (en) * 1965-10-13 1970-10-13 Westinghouse Electric Corp Antireflective coatings for solar cells
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3131958A1 (de) * 1981-08-13 1983-02-24 Solarex Corp., 14001 Rockville, Md. Verfahren zur bildung eines antireflektionsueberzuges auf der oberflaeche von sonnenenergiezellen.

Also Published As

Publication number Publication date
SE7401511L (enExample) 1975-02-24
FR2241880A1 (enExample) 1975-03-21
JPS58103155U (ja) 1983-07-13
NL7405995A (nl) 1975-02-25
SE386012B (sv) 1976-07-26
BE810947A (fr) 1974-08-13
CA1030380A (en) 1978-05-02
AU6529474A (en) 1975-08-07
JPS5046492A (enExample) 1975-04-25
AU476141B2 (en) 1976-09-09
IT1011730B (it) 1977-02-10
FR2241880B1 (enExample) 1977-03-04
US3904453A (en) 1975-09-09
GB1452633A (en) 1976-10-13

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection