DE2353999A1 - Verfahren zur gleichzeitigen herstellung integrierter schaltungen - Google Patents

Verfahren zur gleichzeitigen herstellung integrierter schaltungen

Info

Publication number
DE2353999A1
DE2353999A1 DE19732353999 DE2353999A DE2353999A1 DE 2353999 A1 DE2353999 A1 DE 2353999A1 DE 19732353999 DE19732353999 DE 19732353999 DE 2353999 A DE2353999 A DE 2353999A DE 2353999 A1 DE2353999 A1 DE 2353999A1
Authority
DE
Germany
Prior art keywords
wafer
circuits
yield
type
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732353999
Other languages
German (de)
English (en)
Inventor
Arthur H Depuy
Leonard F Johnson
N Y Poughkeepsie
Stanley Scheinberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2353999A1 publication Critical patent/DE2353999A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dicing (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE19732353999 1972-12-08 1973-10-27 Verfahren zur gleichzeitigen herstellung integrierter schaltungen Pending DE2353999A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00313366A US3842491A (en) 1972-12-08 1972-12-08 Manufacture of assorted types of lsi devices on same wafer

Publications (1)

Publication Number Publication Date
DE2353999A1 true DE2353999A1 (de) 1974-06-12

Family

ID=23215433

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732353999 Pending DE2353999A1 (de) 1972-12-08 1973-10-27 Verfahren zur gleichzeitigen herstellung integrierter schaltungen

Country Status (5)

Country Link
US (1) US3842491A (enExample)
JP (1) JPS5615577B2 (enExample)
DE (1) DE2353999A1 (enExample)
FR (1) FR2210016B1 (enExample)
GB (1) GB1400315A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048362A1 (de) * 1980-12-20 1982-07-29 Deutsche Itt Industries Gmbh, 7800 Freiburg "verfahren zur herstellung von halbleiterbauelementen"

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796194A (en) * 1986-08-20 1989-01-03 Atherton Robert W Real world modeling and control process
JP3309478B2 (ja) * 1993-02-26 2002-07-29 ソニー株式会社 チップ管理システムおよびその入力処理方法とロット処理方法およびチップ管理システムによるチップ製造方法
TW248612B (enExample) * 1993-03-31 1995-06-01 Siemens Ag
US5773315A (en) * 1996-10-28 1998-06-30 Advanced Micro Devices, Inc. Product wafer yield prediction method employing a unit cell approach
US5719605A (en) * 1996-11-20 1998-02-17 Lexmark International, Inc. Large array heater chips for thermal ink jet printheads
US6118137A (en) * 1997-09-08 2000-09-12 Advanced Micro Devices, Inc. Test structure responsive to electrical signals for determining lithographic misalignment of conductors relative to vias
US5916715A (en) * 1997-09-08 1999-06-29 Advanced Micro Devices, Inc. Process of using electrical signals for determining lithographic misalignment of vias relative to electrically active elements
US6070004A (en) * 1997-09-25 2000-05-30 Siemens Aktiengesellschaft Method of maximizing chip yield for semiconductor wafers
US6359461B1 (en) 1998-02-10 2002-03-19 Advanced Micro Devices, Inc. Test structure for determining the properties of densely packed transistors
US5986283A (en) * 1998-02-25 1999-11-16 Advanced Micro Devices Test structure for determining how lithographic patterning of a gate conductor affects transistor properties
US6380554B1 (en) 1998-06-08 2002-04-30 Advanced Micro Devices, Inc. Test structure for electrically measuring the degree of misalignment between successive layers of conductors
US6226781B1 (en) 1998-08-12 2001-05-01 Advanced Micro Devices, Inc. Modifying a design layer of an integrated circuit using overlying and underlying design layers
US6268717B1 (en) 1999-03-04 2001-07-31 Advanced Micro Devices, Inc. Semiconductor test structure with intentional partial defects and method of use
US6294397B1 (en) 1999-03-04 2001-09-25 Advanced Micro Devices, Inc. Drop-in test structure and abbreviated integrated circuit process flow for characterizing production integrated circuit process flow, topography, and equipment
US6452412B1 (en) 1999-03-04 2002-09-17 Advanced Micro Devices, Inc. Drop-in test structure and methodology for characterizing an integrated circuit process flow and topography
US6297644B1 (en) 1999-03-04 2001-10-02 Advanced Micro Devices, Inc. Multipurpose defect test structure with switchable voltage contrast capability and method of use
US6258437B1 (en) 1999-03-31 2001-07-10 Advanced Micro Devices, Inc. Test structure and methodology for characterizing etching in an integrated circuit fabrication process
US6834262B1 (en) 1999-07-02 2004-12-21 Cypress Semiconductor Corporation Scheme for improving the simulation accuracy of integrated circuit patterns by simulation of the mask
US6429452B1 (en) 1999-08-17 2002-08-06 Advanced Micro Devices, Inc. Test structure and methodology for characterizing ion implantation in an integrated circuit fabrication process
US6681376B1 (en) * 2001-10-17 2004-01-20 Cypress Semiconductor Corporation Integrated scheme for semiconductor device verification
JP4137471B2 (ja) * 2002-03-04 2008-08-20 東京エレクトロン株式会社 ダイシング方法、集積回路チップの検査方法及び基板保持装置
US20040219443A1 (en) * 2003-05-01 2004-11-04 Spears Kurt E. Method for wafer dicing
US7698666B2 (en) * 2006-12-29 2010-04-13 Cadence Design Systems, Inc. Method and system for model-based design and layout of an integrated circuit
US7861203B2 (en) * 2006-12-29 2010-12-28 Cadence Design Systems, Inc. Method and system for model-based routing of an integrated circuit
US8234597B2 (en) * 2008-01-14 2012-07-31 International Business Machines Corporation Tool and method to graphically correlate process and test data with specific chips on a wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1001908A (en) * 1962-08-31 1965-08-18 Texas Instruments Inc Semiconductor devices
US3385702A (en) * 1962-10-03 1968-05-28 Ibm Photomechanical method of making metallic patterns
US3702025A (en) * 1969-05-12 1972-11-07 Honeywell Inc Discretionary interconnection process
US3762037A (en) * 1971-03-30 1973-10-02 Ibm Method of testing for the operability of integrated semiconductor circuits having a plurality of separable circuits
US3720309A (en) * 1971-12-07 1973-03-13 Teledyne Inc Method and apparatus for sorting semiconductor dice

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048362A1 (de) * 1980-12-20 1982-07-29 Deutsche Itt Industries Gmbh, 7800 Freiburg "verfahren zur herstellung von halbleiterbauelementen"

Also Published As

Publication number Publication date
GB1400315A (en) 1975-07-16
FR2210016B1 (enExample) 1976-10-01
US3842491A (en) 1974-10-22
JPS5615577B2 (enExample) 1981-04-10
FR2210016A1 (enExample) 1974-07-05
JPS4990085A (enExample) 1974-08-28

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Legal Events

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