DE2345679A1 - Halbleiterkaltkathode - Google Patents
HalbleiterkaltkathodeInfo
- Publication number
- DE2345679A1 DE2345679A1 DE19732345679 DE2345679A DE2345679A1 DE 2345679 A1 DE2345679 A1 DE 2345679A1 DE 19732345679 DE19732345679 DE 19732345679 DE 2345679 A DE2345679 A DE 2345679A DE 2345679 A1 DE2345679 A1 DE 2345679A1
- Authority
- DE
- Germany
- Prior art keywords
- photocathode
- layer
- photocathode according
- transistor structure
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 239000010410 layer Substances 0.000 claims description 119
- 239000000463 material Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 23
- 230000007704 transition Effects 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- -1 cesium oxygen Chemical compound 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 108010034596 procollagen Type III-N-terminal peptide Proteins 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 230000005855 radiation Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052792 caesium Inorganic materials 0.000 description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14681—Bipolar transistor imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4395772A GB1444542A (en) | 1972-09-22 | 1972-09-22 | Radiation sensitive solid state devices |
| GB4395672A GB1444541A (en) | 1972-09-22 | 1972-09-22 | Radiation sensitive solid state devices |
| GB4395972 | 1972-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2345679A1 true DE2345679A1 (de) | 1974-04-04 |
Family
ID=27259828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732345679 Pending DE2345679A1 (de) | 1972-09-22 | 1973-09-11 | Halbleiterkaltkathode |
Country Status (4)
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3988619A (en) * | 1974-12-27 | 1976-10-26 | International Business Machines Corporation | Random access solid-state image sensor with non-destructive read-out |
| US4103297A (en) * | 1976-12-20 | 1978-07-25 | Hughes Aircraft Company | Light-insensitive matrix addressed liquid crystal display system |
| US4326210A (en) * | 1977-09-26 | 1982-04-20 | Sharp Kabushiki Kaisha | Light-responsive field effect mode semiconductor devices |
| US4241358A (en) * | 1979-03-26 | 1980-12-23 | Trw Inc. | Radiation sensitive device with lateral current |
| US4396833A (en) * | 1981-01-22 | 1983-08-02 | Harris Corporation | Optomicrowave integrated circuit |
| US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
| GB2109159B (en) * | 1981-11-06 | 1985-05-30 | Philips Electronic Associated | Semiconductor electron source for display tubes and other equipment |
| GB2109160B (en) * | 1981-11-06 | 1985-05-30 | Philips Electronic Associated | Semiconductor electron source for display tubes and other equipment |
| US4833095A (en) * | 1985-02-19 | 1989-05-23 | Eaton Corporation | Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation |
| US4837175A (en) * | 1983-02-15 | 1989-06-06 | Eaton Corporation | Making a buried channel FET with lateral growth over amorphous region |
| US4724220A (en) * | 1985-02-19 | 1988-02-09 | Eaton Corporation | Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies |
| US4935789A (en) * | 1985-02-19 | 1990-06-19 | Eaton Corporation | Buried channel FET with lateral growth over amorphous region |
| US5818500A (en) * | 1991-05-06 | 1998-10-06 | Eastman Kodak Company | High resolution field emission image source and image recording apparatus |
| US5237180A (en) * | 1991-12-31 | 1993-08-17 | Eastman Kodak Company | High resolution image source |
| US5471051A (en) * | 1993-06-02 | 1995-11-28 | Hamamatsu Photonics K.K. | Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same |
| FR2769114B1 (fr) * | 1997-09-30 | 1999-12-17 | Pixtech Sa | Simplification de l'adressage d'un ecran a micropointes |
| US6291876B1 (en) | 1998-08-20 | 2001-09-18 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with composite atomic barrier film and process for making same |
| US6720654B2 (en) * | 1998-08-20 | 2004-04-13 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with cesium barrier film and process for making same |
| US6992698B1 (en) * | 1999-08-31 | 2006-01-31 | Micron Technology, Inc. | Integrated field emission array sensor, display, and transmitter, and apparatus including same |
| US6847045B2 (en) * | 2001-10-12 | 2005-01-25 | Hewlett-Packard Development Company, L.P. | High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission |
| JP2008278292A (ja) * | 2007-05-01 | 2008-11-13 | Funai Electric Co Ltd | 表示装置及び液晶テレビジョン |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3699404A (en) * | 1971-02-24 | 1972-10-17 | Rca Corp | Negative effective electron affinity emitters with drift fields using deep acceptor doping |
| US3721839A (en) * | 1971-03-24 | 1973-03-20 | Philips Corp | Solid state imaging device with fet sensor |
-
1973
- 1973-09-11 DE DE19732345679 patent/DE2345679A1/de active Pending
- 1973-09-19 JP JP10584673A patent/JPS561737B2/ja not_active Expired
- 1973-09-24 FR FR7334100A patent/FR2213591B1/fr not_active Expired
-
1975
- 1975-03-05 US US05/555,604 patent/US3931633A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2213591B1 (US20100268047A1-20101021-C00003.png) | 1976-10-01 |
| US3931633A (en) | 1976-01-06 |
| FR2213591A1 (US20100268047A1-20101021-C00003.png) | 1974-08-02 |
| JPS561737B2 (US20100268047A1-20101021-C00003.png) | 1981-01-14 |
| JPS49134265A (US20100268047A1-20101021-C00003.png) | 1974-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2345679A1 (de) | Halbleiterkaltkathode | |
| DE2213765C3 (de) | Bildaufnahmevorrichtung mit einem Feldeffekttransistor als Sensor | |
| DE2347271C2 (de) | Strahlungsempfindliche Halbleiteranordnung | |
| DE2235533C3 (de) | Halbleiterbauelement mit einem Ladungsspeicherelement | |
| DE3500528C2 (de) | Verfahren zur Bildung eines Paares komplementärer MOS-Transistoren | |
| DE2025511A1 (de) | Halbleitervorrichtung mit einem HeteroÜbergang | |
| DE2735651C2 (US20100268047A1-20101021-C00003.png) | ||
| DE2326751A1 (de) | Halbleiter-speichervorrichtung und feldeffekttransistor, der fuer die verwendung in dieser vorrichtung geeignet ist | |
| DE2802987A1 (de) | Festkoerper-abbildungsvorrichtung | |
| DE2412699A1 (de) | Halbleiteranordnung | |
| DE1838035U (de) | Halbleitervorrichtung. | |
| DE2359720A1 (de) | Halbleiteranordnung | |
| DE3214893A1 (de) | Halbleiteranordnung | |
| DE2341899A1 (de) | Halbleiteranordnung | |
| DE3240481A1 (de) | "halbleiteranordnung zum ausstrahlen von elektronen und anordnung mit einer derartigen halbleiteranordnung" | |
| DE2427256A1 (de) | Halbleiteranordnung | |
| DE2345686A1 (de) | Bildwiedergabe- und/oder -umwandlungsvorrichtung | |
| DE2133979B2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE3345190A1 (de) | Festkoerper-bildaufnahmewandlerelement | |
| DE2734509A1 (de) | Integrierte halbleiterschaltung | |
| DE1957335C3 (de) | Strahlungsempfindliches Halbleiterbauelement und seine Verwendung in einer Bildaufnahmeröhre | |
| DE3138763A1 (de) | Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung | |
| DE1639177C3 (de) | Monolithisch integrierte Gleichrichterschaltung | |
| EP0098497A2 (de) | IGFET mit Ladungsträgerinjektion | |
| DE1210490B (de) | Steuerbares Halbleiterbauelement mit einer pnpn- oder npnp-Zonenfolge und Verfahren zum Herstellen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |