DE2343206A1 - Feldeffekt-transistoranordnung - Google Patents

Feldeffekt-transistoranordnung

Info

Publication number
DE2343206A1
DE2343206A1 DE19732343206 DE2343206A DE2343206A1 DE 2343206 A1 DE2343206 A1 DE 2343206A1 DE 19732343206 DE19732343206 DE 19732343206 DE 2343206 A DE2343206 A DE 2343206A DE 2343206 A1 DE2343206 A1 DE 2343206A1
Authority
DE
Germany
Prior art keywords
transistor arrangement
source region
region
drain region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19732343206
Other languages
German (de)
English (en)
Other versions
DE2343206C2 (un
Inventor
Takaaki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2343206A1 publication Critical patent/DE2343206A1/de
Application granted granted Critical
Publication of DE2343206C2 publication Critical patent/DE2343206C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
DE19732343206 1972-08-28 1973-08-27 Feldeffekt-transistoranordnung Granted DE2343206A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8595072A JPS4941081A (un) 1972-08-28 1972-08-28

Publications (2)

Publication Number Publication Date
DE2343206A1 true DE2343206A1 (de) 1974-03-14
DE2343206C2 DE2343206C2 (un) 1987-05-21

Family

ID=13873026

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732343206 Granted DE2343206A1 (de) 1972-08-28 1973-08-27 Feldeffekt-transistoranordnung

Country Status (5)

Country Link
JP (1) JPS4941081A (un)
AT (1) AT349530B (un)
DE (1) DE2343206A1 (un)
GB (1) GB1432989A (un)
NL (1) NL7311854A (un)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2334208A1 (fr) * 1975-12-03 1977-07-01 Hughes Aircraft Co Commutateur a semi-conducteur a grille resistive

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10350702B4 (de) * 2003-10-30 2007-08-09 Infineon Technologies Ag Halbleiterbauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikusschicht robusten Struktur

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE Transactions on Electron Devices, Bd. ED-18, 1971, S.418-425 *
In Betracht gezogenes älteres Patent: DE-PS 23 23 471 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2334208A1 (fr) * 1975-12-03 1977-07-01 Hughes Aircraft Co Commutateur a semi-conducteur a grille resistive

Also Published As

Publication number Publication date
GB1432989A (en) 1976-04-22
DE2343206C2 (un) 1987-05-21
ATA746773A (de) 1978-09-15
JPS4941081A (un) 1974-04-17
NL7311854A (un) 1974-03-04
AT349530B (de) 1979-04-10

Similar Documents

Publication Publication Date Title
DE2312414C2 (de) Verfahren zur Herstellung von integrierten MOSFET-Schaltkreisen
DE3881304T2 (de) MOS-Transistor.
DE3301648A1 (de) Misfet mit eingangsverstaerker
DE69114984T2 (de) Dünnfilm-Transistor.
DE2903534A1 (de) Feldeffekttransistor
DE69324949T2 (de) Raucharme Transistorverstärker mit hoher Empfindlichkeit
DE1789152B2 (de) Signalübertragungsschaltung
DE3123239C2 (un)
DE2809966A1 (de) Feldeffekttransistorschaltung mit verbesserten betriebseigenschaften
DE2432352B2 (de) MNOS-Halbleiterspeicherelement
DE69329543T2 (de) Herstellung eines Feldeffekttransistors mit integrierter Schottky-Klammerungsdiode
DE3326423A1 (de) Integrierter schaltkreis
DE1464395A1 (de) Feldeffekt-Transistor
DE102007056741A1 (de) Spannungsmodulierter Transistor
DE2629468A1 (de) Temperaturkompensierter oszillator
DE2236897B2 (un)
DE69131541T2 (de) Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung
DE2323471C2 (de) Schaltung mit veränderbarem Widerstand
DE2451364C2 (de) Digital steuerbarer MOS-Feldeffektkondensator
DE112016006634T5 (de) Anliegender bodykontakt für soi-transistor
DE3879557T2 (de) Halbleiteranordnung mit einer Ladungsübertragungsanordnung.
DE2343206A1 (de) Feldeffekt-transistoranordnung
DE69112561T2 (de) Feldeffekttransistor mit verteilter Schwellenspannung.
DE2212196A1 (de) Kondensator für monolithische Halbleiterschaltungen
EP1273043B1 (de) Cmos-kompatibler lateraler dmos-transistor

Legal Events

Date Code Title Description
OD Request for examination
8176 Proceedings suspended because of application no:

Ref document number: 2323471

Country of ref document: DE

Format of ref document f/p: P

8178 Suspension cancelled
D2 Grant after examination
8364 No opposition during term of opposition