DE233020C - - Google Patents

Info

Publication number
DE233020C
DE233020C DENDAT233020D DE233020DA DE233020C DE 233020 C DE233020 C DE 233020C DE NDAT233020 D DENDAT233020 D DE NDAT233020D DE 233020D A DE233020D A DE 233020DA DE 233020 C DE233020 C DE 233020C
Authority
DE
Germany
Prior art keywords
mica
pieces
split
splitting
suction points
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DENDAT233020D
Other languages
German (de)
English (en)
Publication of DE233020C publication Critical patent/DE233020C/de
Active legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/32—Methods and apparatus specially adapted for working materials which can easily be split, e.g. mica, slate, schist
    • B28D1/322—Splitting of the working materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
DENDAT233020D Active DE233020C (fr)

Publications (1)

Publication Number Publication Date
DE233020C true DE233020C (fr)

Family

ID=492992

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT233020D Active DE233020C (fr)

Country Status (1)

Country Link
DE (1) DE233020C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2785217A1 (fr) * 1998-10-30 2000-05-05 Soitec Silicon On Insulator Procede et dispositif pour separer en deux tranches une plaque de materiau notamment semi-conducteur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2785217A1 (fr) * 1998-10-30 2000-05-05 Soitec Silicon On Insulator Procede et dispositif pour separer en deux tranches une plaque de materiau notamment semi-conducteur
WO2000026000A1 (fr) * 1998-10-30 2000-05-11 S.O.I.Tec Silicon On Insulator Technologies Procede et dispositif pour separer en deux tranches une plaque de materiau notamment semi-conducteur
US6468879B1 (en) 1998-10-30 2002-10-22 S.O.I. Tec Silicon On Insulator Technologies Method and device for separating a plate of material, in particular semiconductor material, into two wafers

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