DE2330187A1 - Einrichtung zur informationsverarbeitung unter anwendung magnetischer zylindrischer einzelwanddomaenen - Google Patents
Einrichtung zur informationsverarbeitung unter anwendung magnetischer zylindrischer einzelwanddomaenenInfo
- Publication number
- DE2330187A1 DE2330187A1 DE2330187A DE2330187A DE2330187A1 DE 2330187 A1 DE2330187 A1 DE 2330187A1 DE 2330187 A DE2330187 A DE 2330187A DE 2330187 A DE2330187 A DE 2330187A DE 2330187 A1 DE2330187 A1 DE 2330187A1
- Authority
- DE
- Germany
- Prior art keywords
- magnetic
- cylindrical single
- single wall
- semiconductor
- magnetic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010365 information processing Effects 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000005355 Hall effect Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002223 garnet Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/085—Generating magnetic fields therefor, e.g. uniform magnetic field for magnetic domain stabilisation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0866—Detecting magnetic domains
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26831672A | 1972-07-03 | 1972-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2330187A1 true DE2330187A1 (de) | 1974-01-24 |
Family
ID=23022419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2330187A Pending DE2330187A1 (de) | 1972-07-03 | 1973-06-14 | Einrichtung zur informationsverarbeitung unter anwendung magnetischer zylindrischer einzelwanddomaenen |
Country Status (7)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4068219A (en) * | 1975-02-18 | 1978-01-10 | Honeywell Information Systems, Inc. | Magnetic domain bias field assembly |
| NL7709312A (nl) * | 1977-08-24 | 1979-02-27 | Philips Nv | Inrichting met magnetische bel-domeinen. |
| US4180863A (en) * | 1978-06-30 | 1979-12-25 | International Business Machines Corporation | Magnetic domain device modular assembly |
| US4283771A (en) * | 1978-07-31 | 1981-08-11 | International Business Machines Corporation | On-chip bubble domain relational data base system |
| FR2444976A1 (fr) * | 1978-12-21 | 1980-07-18 | Cii Honeywell Bull | Systeme de traitement d'informations a cartes portatives et a postes de commandes, utilisant des elements a bulles magnetiques |
| FR2444975A1 (fr) * | 1978-12-21 | 1980-07-18 | Cii Honeywell Bull | Carte portative comportant des elements a bulles magnetiques |
| JPS5720989A (en) * | 1980-07-15 | 1982-02-03 | Fanuc Ltd | Bubble memory cassette |
| US5122227A (en) * | 1986-10-31 | 1992-06-16 | Texas Instruments Incorporated | Method of making a monolithic integrated magnetic circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1300973B (de) * | 1965-03-19 | 1969-08-14 | Philips Patentverwaltung | Verfahren zur Herstellung von Speicher-Matrixanordnungen |
| US3701125A (en) * | 1970-12-31 | 1972-10-24 | Ibm | Self-contained magnetic bubble domain memory chip |
| US3701126A (en) * | 1971-01-04 | 1972-10-24 | Honeywell Inf Systems | Static non-destructive single wall domain memory with hall voltage readout |
| US3702991A (en) * | 1971-03-30 | 1972-11-14 | Texas Instruments Inc | Magnetic domain memory structure |
-
1972
- 1972-07-03 US US00268316A patent/US3786445A/en not_active Expired - Lifetime
-
1973
- 1973-05-25 IT IT24575/73A patent/IT988680B/it active
- 1973-06-14 GB GB2826373A patent/GB1376429A/en not_active Expired
- 1973-06-14 DE DE2330187A patent/DE2330187A1/de active Pending
- 1973-06-19 CA CA174,369A patent/CA965871A/en not_active Expired
- 1973-06-22 JP JP48069973A patent/JPS5129780B2/ja not_active Expired
- 1973-06-26 FR FR7324280*A patent/FR2237270B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4952937A (US07709020-20100504-C00041.png) | 1974-05-23 |
| FR2237270B1 (US07709020-20100504-C00041.png) | 1976-05-07 |
| IT988680B (it) | 1975-04-30 |
| GB1376429A (en) | 1974-12-04 |
| CA965871A (en) | 1975-04-08 |
| FR2237270A1 (US07709020-20100504-C00041.png) | 1975-02-07 |
| US3786445A (en) | 1974-01-15 |
| JPS5129780B2 (US07709020-20100504-C00041.png) | 1976-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |