Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SAfiledCriticalThomson CSF SA
Publication of DE2328091A1publicationCriticalpatent/DE2328091A1/de
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Bipolar Transistors
(AREA)
DE2328091A1972-06-021973-06-01Ebene verbindungen fuer etagenweise aufgebaute halbleitervorrichtungen und verfahren zu ihrer herstellung
PendingDE2328091A1
(de)
Verfahren zur Herstellung von Isolationsschichten zwischen mehrschichtig übereinander angeordneten metallischen Leitungsverbindungen für eine Halbleiteranordnung