DE2315894B2 - - Google Patents
Info
- Publication number
- DE2315894B2 DE2315894B2 DE2315894A DE2315894A DE2315894B2 DE 2315894 B2 DE2315894 B2 DE 2315894B2 DE 2315894 A DE2315894 A DE 2315894A DE 2315894 A DE2315894 A DE 2315894A DE 2315894 B2 DE2315894 B2 DE 2315894B2
- Authority
- DE
- Germany
- Prior art keywords
- dopant
- source
- diffusion
- semiconductor body
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- CVXNLQMWLGJQMZ-UHFFFAOYSA-N arsenic zinc Chemical compound [Zn].[As] CVXNLQMWLGJQMZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 2
- 239000002244 precipitate Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 37
- 239000012071 phase Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 11
- 239000011701 zinc Substances 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000589614 Pseudomonas stutzeri Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical class [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7211912A FR2178751B1 (US20100223739A1-20100909-C00025.png) | 1972-04-05 | 1972-04-05 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2315894A1 DE2315894A1 (de) | 1973-10-18 |
| DE2315894B2 true DE2315894B2 (US20100223739A1-20100909-C00025.png) | 1980-02-07 |
| DE2315894C3 DE2315894C3 (de) | 1980-10-02 |
Family
ID=9096355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2315894A Expired DE2315894C3 (de) | 1972-04-05 | 1973-03-30 | Verfahren zum Eindiffundieren von Dotierstoff in einen Halbleiterkörper |
Country Status (7)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2284982A1 (fr) * | 1974-09-16 | 1976-04-09 | Radiotechnique Compelec | Procede de diffusion d'impuretes dans des corps semiconducteurs |
| JPS5464978U (US20100223739A1-20100909-C00025.png) * | 1977-10-17 | 1979-05-08 | ||
| FR2409791A1 (fr) * | 1977-11-25 | 1979-06-22 | Silicium Semiconducteur Ssc | Appareils de dopage par diffusion de tranches semi-conductrices |
| JPS584811B2 (ja) * | 1978-10-31 | 1983-01-27 | 富士通株式会社 | 半導体装置の製造方法 |
| US4348580A (en) * | 1980-05-07 | 1982-09-07 | Tylan Corporation | Energy efficient furnace with movable end wall |
| US4415385A (en) * | 1980-08-15 | 1983-11-15 | Hitachi, Ltd. | Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel |
| US4742022A (en) * | 1986-06-26 | 1988-05-03 | Gte Laboratories Incorporated | Method of diffusing zinc into III-V compound semiconductor material |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL264273A (US20100223739A1-20100909-C00025.png) * | 1960-05-02 | |||
| US3305412A (en) * | 1964-02-20 | 1967-02-21 | Hughes Aircraft Co | Method for preparing a gallium arsenide diode |
| DE1283204B (de) * | 1964-06-20 | 1968-11-21 | Siemens Ag | Verfahren zum Eindiffundieren von zwei Fremdstoffen in einen einkristallinen Halbleiterkoerper |
| GB1054360A (US20100223739A1-20100909-C00025.png) * | 1964-12-05 | |||
| GB1086660A (en) * | 1964-12-22 | 1967-10-11 | Siemens Ag | A process for doping semiconductor bodies |
| US3279964A (en) * | 1965-06-03 | 1966-10-18 | Btu Eng Corp | Method for continuous gas diffusion |
| US3617820A (en) * | 1966-11-18 | 1971-11-02 | Monsanto Co | Injection-luminescent diodes |
| US3540952A (en) * | 1968-01-02 | 1970-11-17 | Gen Electric | Process for fabricating semiconductor laser diodes |
| JPS4915903B1 (US20100223739A1-20100909-C00025.png) * | 1969-08-18 | 1974-04-18 |
-
1972
- 1972-04-05 FR FR7211912A patent/FR2178751B1/fr not_active Expired
-
1973
- 1973-03-29 US US00346081A patent/US3852129A/en not_active Expired - Lifetime
- 1973-03-30 DE DE2315894A patent/DE2315894C3/de not_active Expired
- 1973-04-02 CA CA167,715A patent/CA984976A/en not_active Expired
- 1973-04-02 GB GB1571073A patent/GB1372162A/en not_active Expired
- 1973-04-02 JP JP48036818A patent/JPS525226B2/ja not_active Expired
- 1973-04-02 IT IT67938/73A patent/IT980738B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2315894A1 (de) | 1973-10-18 |
| FR2178751B1 (US20100223739A1-20100909-C00025.png) | 1974-10-18 |
| US3852129A (en) | 1974-12-03 |
| CA984976A (en) | 1976-03-02 |
| FR2178751A1 (US20100223739A1-20100909-C00025.png) | 1973-11-16 |
| JPS4917675A (US20100223739A1-20100909-C00025.png) | 1974-02-16 |
| GB1372162A (en) | 1974-10-30 |
| JPS525226B2 (US20100223739A1-20100909-C00025.png) | 1977-02-10 |
| DE2315894C3 (de) | 1980-10-02 |
| IT980738B (it) | 1974-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |