DE2310755B2 - Verfahren zur herstellung eines magnetkernmatrixspeichers - Google Patents
Verfahren zur herstellung eines magnetkernmatrixspeichersInfo
- Publication number
- DE2310755B2 DE2310755B2 DE19732310755 DE2310755A DE2310755B2 DE 2310755 B2 DE2310755 B2 DE 2310755B2 DE 19732310755 DE19732310755 DE 19732310755 DE 2310755 A DE2310755 A DE 2310755A DE 2310755 B2 DE2310755 B2 DE 2310755B2
- Authority
- DE
- Germany
- Prior art keywords
- lines
- toroids
- deposited
- magnetic material
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011159 matrix material Substances 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 26
- 238000009413 insulation Methods 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 14
- 239000000696 magnetic material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00233061A US3823033A (en) | 1972-03-09 | 1972-03-09 | Method of forming a high density planar core memory |
| US23306172 | 1972-03-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2310755A1 DE2310755A1 (de) | 1973-09-20 |
| DE2310755B2 true DE2310755B2 (de) | 1976-08-26 |
| DE2310755C3 DE2310755C3 (https=) | 1977-04-07 |
Family
ID=22875725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732310755 Granted DE2310755B2 (de) | 1972-03-09 | 1973-03-03 | Verfahren zur herstellung eines magnetkernmatrixspeichers |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3823033A (https=) |
| JP (1) | JPS48103246A (https=) |
| AU (1) | AU465958B2 (https=) |
| BE (1) | BE796516A (https=) |
| CA (1) | CA966583A (https=) |
| DE (1) | DE2310755B2 (https=) |
| FR (1) | FR2175162B1 (https=) |
| GB (1) | GB1358533A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100477316C (zh) * | 2006-04-11 | 2009-04-08 | 中国科学院物理研究所 | 基于环状闭合型磁性多层膜的磁逻辑元件 |
-
1972
- 1972-03-09 US US00233061A patent/US3823033A/en not_active Expired - Lifetime
-
1973
- 1973-02-20 GB GB823073A patent/GB1358533A/en not_active Expired
- 1973-02-27 AU AU52625/73A patent/AU465958B2/en not_active Expired
- 1973-03-01 CA CA164,980A patent/CA966583A/en not_active Expired
- 1973-03-03 DE DE19732310755 patent/DE2310755B2/de active Granted
- 1973-03-08 FR FR7308249A patent/FR2175162B1/fr not_active Expired
- 1973-03-08 JP JP48027538A patent/JPS48103246A/ja active Pending
- 1973-03-09 BE BE128571A patent/BE796516A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3823033A (en) | 1974-07-09 |
| JPS48103246A (https=) | 1973-12-25 |
| AU5262573A (en) | 1974-08-29 |
| FR2175162A1 (https=) | 1973-10-19 |
| AU465958B2 (en) | 1975-10-09 |
| CA966583A (en) | 1975-04-22 |
| FR2175162B1 (https=) | 1977-12-30 |
| DE2310755A1 (de) | 1973-09-20 |
| GB1358533A (en) | 1974-07-03 |
| BE796516A (fr) | 1973-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |