DE2307501A1 - Halogendotierung von kristallen der nukleardetektorqualitaet - Google Patents

Halogendotierung von kristallen der nukleardetektorqualitaet

Info

Publication number
DE2307501A1
DE2307501A1 DE19732307501 DE2307501A DE2307501A1 DE 2307501 A1 DE2307501 A1 DE 2307501A1 DE 19732307501 DE19732307501 DE 19732307501 DE 2307501 A DE2307501 A DE 2307501A DE 2307501 A1 DE2307501 A1 DE 2307501A1
Authority
DE
Germany
Prior art keywords
mass
glassworks
graphite
poured
foundry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732307501
Other languages
German (de)
English (en)
Inventor
Fritz Veit Wald
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Atomic Energy Commission (AEC)
Original Assignee
US Atomic Energy Commission (AEC)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Atomic Energy Commission (AEC) filed Critical US Atomic Energy Commission (AEC)
Publication of DE2307501A1 publication Critical patent/DE2307501A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/38Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/388Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02Zone-melting with a solvent, e.g. travelling solvent process
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/125The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Curing Cements, Concrete, And Artificial Stone (AREA)
  • Mold Materials And Core Materials (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE19732307501 1972-02-16 1973-02-15 Halogendotierung von kristallen der nukleardetektorqualitaet Pending DE2307501A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22692572A 1972-02-16 1972-02-16

Publications (1)

Publication Number Publication Date
DE2307501A1 true DE2307501A1 (de) 1973-10-04

Family

ID=22851017

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732307501 Pending DE2307501A1 (de) 1972-02-16 1973-02-15 Halogendotierung von kristallen der nukleardetektorqualitaet

Country Status (3)

Country Link
JP (1) JPS4890687A (enrdf_load_stackoverflow)
DE (1) DE2307501A1 (enrdf_load_stackoverflow)
FR (1) FR2172231A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141777A (en) * 1974-07-19 1979-02-27 Matveev Oleg A Method of preparing doped single crystals of cadmium telluride

Also Published As

Publication number Publication date
FR2172231A1 (en) 1973-09-28
FR2172231B1 (enrdf_load_stackoverflow) 1976-11-05
JPS4890687A (enrdf_load_stackoverflow) 1973-11-26

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