FR2172231A1 - Halogen-doped cadium telluride - by zone melting, for (gamma) radiation-sensitive materials and high temp semiconductors - Google Patents
Halogen-doped cadium telluride - by zone melting, for (gamma) radiation-sensitive materials and high temp semiconductorsInfo
- Publication number
- FR2172231A1 FR2172231A1 FR7305201A FR7305201A FR2172231A1 FR 2172231 A1 FR2172231 A1 FR 2172231A1 FR 7305201 A FR7305201 A FR 7305201A FR 7305201 A FR7305201 A FR 7305201A FR 2172231 A1 FR2172231 A1 FR 2172231A1
- Authority
- FR
- France
- Prior art keywords
- zone
- radiation
- soln
- gamma
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title abstract 3
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title 1
- 238000004857 zone melting Methods 0.000 title 1
- 229910004613 CdTe Inorganic materials 0.000 abstract 2
- KPWJBEFBFLRCLH-UHFFFAOYSA-L cadmium bromide Chemical compound Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 abstract 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract 2
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Curing Cements, Concrete, And Artificial Stone (AREA)
- Mold Materials And Core Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22692572A | 1972-02-16 | 1972-02-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2172231A1 true FR2172231A1 (en) | 1973-09-28 |
FR2172231B1 FR2172231B1 (fr) | 1976-11-05 |
Family
ID=22851017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7305201A Granted FR2172231A1 (en) | 1972-02-16 | 1973-02-14 | Halogen-doped cadium telluride - by zone melting, for (gamma) radiation-sensitive materials and high temp semiconductors |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS4890687A (fr) |
DE (1) | DE2307501A1 (fr) |
FR (1) | FR2172231A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2284367A1 (fr) * | 1974-07-19 | 1976-04-09 | Fiz Tekhn I Ime | Procede d'obtention de monocristaux de tellurure de cadmium dopes |
-
1973
- 1973-02-14 FR FR7305201A patent/FR2172231A1/fr active Granted
- 1973-02-15 DE DE19732307501 patent/DE2307501A1/de active Pending
- 1973-02-15 JP JP48018830A patent/JPS4890687A/ja active Pending
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2284367A1 (fr) * | 1974-07-19 | 1976-04-09 | Fiz Tekhn I Ime | Procede d'obtention de monocristaux de tellurure de cadmium dopes |
Also Published As
Publication number | Publication date |
---|---|
FR2172231B1 (fr) | 1976-11-05 |
DE2307501A1 (de) | 1973-10-04 |
JPS4890687A (fr) | 1973-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |