DE2253109C3 - Verfahren zum Zink-Diffusionsdotieren von epitaktisch auf Germaniumsubstrat aufgewachsenem III/V-Halbleitermaterial - Google Patents
Verfahren zum Zink-Diffusionsdotieren von epitaktisch auf Germaniumsubstrat aufgewachsenem III/V-HalbleitermaterialInfo
- Publication number
- DE2253109C3 DE2253109C3 DE2253109A DE2253109A DE2253109C3 DE 2253109 C3 DE2253109 C3 DE 2253109C3 DE 2253109 A DE2253109 A DE 2253109A DE 2253109 A DE2253109 A DE 2253109A DE 2253109 C3 DE2253109 C3 DE 2253109C3
- Authority
- DE
- Germany
- Prior art keywords
- diffusion
- germanium
- substrate
- zinc
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 title claims description 26
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 22
- 229910052732 germanium Inorganic materials 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 title claims description 20
- 239000000463 material Substances 0.000 title claims description 16
- 239000011701 zinc Substances 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 229910052725 zinc Inorganic materials 0.000 title claims description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 claims 2
- 229910005540 GaP Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 238000003491 array Methods 0.000 claims 1
- 238000000889 atomisation Methods 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 235000013601 eggs Nutrition 0.000 claims 1
- 230000002349 favourable effect Effects 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910021653 sulphate ion Inorganic materials 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 150000003752 zinc compounds Chemical class 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19446771A | 1971-11-01 | 1971-11-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2253109A1 DE2253109A1 (de) | 1973-05-17 |
| DE2253109B2 DE2253109B2 (de) | 1974-04-25 |
| DE2253109C3 true DE2253109C3 (de) | 1974-11-21 |
Family
ID=22717713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2253109A Expired DE2253109C3 (de) | 1971-11-01 | 1972-10-30 | Verfahren zum Zink-Diffusionsdotieren von epitaktisch auf Germaniumsubstrat aufgewachsenem III/V-Halbleitermaterial |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3723201A (enExample) |
| JP (1) | JPS4854888A (enExample) |
| DE (1) | DE2253109C3 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52915B1 (enExample) * | 1971-06-01 | 1977-01-11 | ||
| US4000020A (en) * | 1973-04-30 | 1976-12-28 | Texas Instruments Incorporated | Vapor epitaxial method for depositing gallium arsenide phosphide on germanium and silicon substrate wafers |
| JPS5017776A (enExample) * | 1973-05-14 | 1975-02-25 | ||
| CA1023835A (en) * | 1974-07-08 | 1978-01-03 | Tadao Nakamura | Light emitting gallium phosphide device |
| US4006045A (en) * | 1974-10-21 | 1977-02-01 | International Business Machines Corporation | Method for producing high power semiconductor device using anodic treatment and enhanced diffusion |
| JPS5426440B2 (enExample) * | 1974-11-25 | 1979-09-04 | ||
| DE2601652C3 (de) * | 1976-01-17 | 1979-11-08 | Metallurgie Hoboken-Overpelt, Bruessel | Verfahren zur epitaxialen Abscheidung einer Am. Bv Halbleiterschicht auf einem Germaniumsubstrat mit einer (100)-Orientierong |
| US4053335A (en) * | 1976-04-02 | 1977-10-11 | International Business Machines Corporation | Method of gettering using backside polycrystalline silicon |
| FR2376513A1 (fr) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | Dispositif semiconducteur muni d'un film protecteur |
| US4256532A (en) * | 1977-07-05 | 1981-03-17 | International Business Machines Corporation | Method for making a silicon mask |
| JPS54773Y2 (enExample) * | 1977-10-20 | 1979-01-16 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5129636A (ja) * | 1974-09-04 | 1976-03-13 | Mitsubishi Motors Corp | Enjinnoyuatsuteikanyoru jidoteishisochi |
-
1971
- 1971-11-01 US US00194467A patent/US3723201A/en not_active Expired - Lifetime
-
1972
- 1972-10-30 DE DE2253109A patent/DE2253109C3/de not_active Expired
- 1972-10-31 JP JP10858072A patent/JPS4854888A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2253109A1 (de) | 1973-05-17 |
| JPS4854888A (enExample) | 1973-08-01 |
| DE2253109B2 (de) | 1974-04-25 |
| US3723201A (en) | 1973-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |