DE2253109C3 - Verfahren zum Zink-Diffusionsdotieren von epitaktisch auf Germaniumsubstrat aufgewachsenem III/V-Halbleitermaterial - Google Patents

Verfahren zum Zink-Diffusionsdotieren von epitaktisch auf Germaniumsubstrat aufgewachsenem III/V-Halbleitermaterial

Info

Publication number
DE2253109C3
DE2253109C3 DE2253109A DE2253109A DE2253109C3 DE 2253109 C3 DE2253109 C3 DE 2253109C3 DE 2253109 A DE2253109 A DE 2253109A DE 2253109 A DE2253109 A DE 2253109A DE 2253109 C3 DE2253109 C3 DE 2253109C3
Authority
DE
Germany
Prior art keywords
diffusion
germanium
substrate
zinc
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2253109A
Other languages
German (de)
English (en)
Other versions
DE2253109B2 (de
DE2253109A1 (de
Inventor
John George Scottsdale Ariz. Keil (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE2253109A1 publication Critical patent/DE2253109A1/de
Publication of DE2253109B2 publication Critical patent/DE2253109B2/de
Application granted granted Critical
Publication of DE2253109C3 publication Critical patent/DE2253109C3/de
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE2253109A 1971-11-01 1972-10-30 Verfahren zum Zink-Diffusionsdotieren von epitaktisch auf Germaniumsubstrat aufgewachsenem III/V-Halbleitermaterial Expired DE2253109C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19446771A 1971-11-01 1971-11-01

Publications (3)

Publication Number Publication Date
DE2253109A1 DE2253109A1 (de) 1973-05-17
DE2253109B2 DE2253109B2 (de) 1974-04-25
DE2253109C3 true DE2253109C3 (de) 1974-11-21

Family

ID=22717713

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2253109A Expired DE2253109C3 (de) 1971-11-01 1972-10-30 Verfahren zum Zink-Diffusionsdotieren von epitaktisch auf Germaniumsubstrat aufgewachsenem III/V-Halbleitermaterial

Country Status (3)

Country Link
US (1) US3723201A (OSRAM)
JP (1) JPS4854888A (OSRAM)
DE (1) DE2253109C3 (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52915B1 (OSRAM) * 1971-06-01 1977-01-11
US4000020A (en) * 1973-04-30 1976-12-28 Texas Instruments Incorporated Vapor epitaxial method for depositing gallium arsenide phosphide on germanium and silicon substrate wafers
JPS5017776A (OSRAM) * 1973-05-14 1975-02-25
CA1023835A (en) * 1974-07-08 1978-01-03 Tadao Nakamura Light emitting gallium phosphide device
US4006045A (en) * 1974-10-21 1977-02-01 International Business Machines Corporation Method for producing high power semiconductor device using anodic treatment and enhanced diffusion
JPS5426440B2 (OSRAM) * 1974-11-25 1979-09-04
DE2601652C3 (de) * 1976-01-17 1979-11-08 Metallurgie Hoboken-Overpelt, Bruessel Verfahren zur epitaxialen Abscheidung einer Am. Bv Halbleiterschicht auf einem Germaniumsubstrat mit einer (100)-Orientierong
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
FR2376513A1 (fr) * 1976-12-31 1978-07-28 Radiotechnique Compelec Dispositif semiconducteur muni d'un film protecteur
US4256532A (en) * 1977-07-05 1981-03-17 International Business Machines Corporation Method for making a silicon mask
JPS54773Y2 (OSRAM) * 1977-10-20 1979-01-16

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129636A (ja) * 1974-09-04 1976-03-13 Mitsubishi Motors Corp Enjinnoyuatsuteikanyoru jidoteishisochi

Also Published As

Publication number Publication date
DE2253109B2 (de) 1974-04-25
US3723201A (en) 1973-03-27
JPS4854888A (OSRAM) 1973-08-01
DE2253109A1 (de) 1973-05-17

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)