DE2252343C3 - Verfahren zur Herstellung von künstlichen Diamanten - Google Patents
Verfahren zur Herstellung von künstlichen DiamantenInfo
- Publication number
- DE2252343C3 DE2252343C3 DE2252343A DE2252343A DE2252343C3 DE 2252343 C3 DE2252343 C3 DE 2252343C3 DE 2252343 A DE2252343 A DE 2252343A DE 2252343 A DE2252343 A DE 2252343A DE 2252343 C3 DE2252343 C3 DE 2252343C3
- Authority
- DE
- Germany
- Prior art keywords
- diamond
- graphite
- production
- artificial
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010432 diamond Substances 0.000 title claims description 94
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910003460 diamond Inorganic materials 0.000 claims description 75
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 229910002804 graphite Inorganic materials 0.000 claims description 26
- 239000010439 graphite Substances 0.000 claims description 26
- 239000011261 inert gas Substances 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 6
- 229910052743 krypton Inorganic materials 0.000 claims description 5
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 21
- 239000010410 layer Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000011835 investigation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical class B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 241000947853 Vibrionales Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005188 flotation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
- C23C14/0611—Diamond
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1708806A SU411037A1 (ru) | 1971-10-28 | 1971-10-28 | Способ получения искусственных алмазов |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2252343A1 DE2252343A1 (de) | 1973-05-10 |
| DE2252343B2 DE2252343B2 (de) | 1977-11-17 |
| DE2252343C3 true DE2252343C3 (de) | 1978-07-13 |
Family
ID=20491295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2252343A Expired DE2252343C3 (de) | 1971-10-28 | 1972-10-25 | Verfahren zur Herstellung von künstlichen Diamanten |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3840451A (cg-RX-API-DMAC10.html) |
| CH (1) | CH582622A5 (cg-RX-API-DMAC10.html) |
| DE (1) | DE2252343C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2157957B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1396987A (cg-RX-API-DMAC10.html) |
| SU (1) | SU411037A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4049533A (en) * | 1975-09-10 | 1977-09-20 | Golyanov Vyacheslav Mikhailovi | Device for producing coatings by means of ion sputtering |
| FR2393605A1 (fr) * | 1977-06-09 | 1979-01-05 | Nat Res Dev | Procede de croissance de cristaux de diamant |
| EP0048542B2 (en) * | 1980-08-21 | 1993-03-31 | National Research Development Corporation | Coating infra red transparent semiconductor material |
| JPS58221275A (ja) * | 1982-06-16 | 1983-12-22 | Anelva Corp | スパツタリング装置 |
| DE3205919C1 (de) * | 1982-02-19 | 1983-07-21 | Freudenberg, Carl, 6940 Weinheim | Verfahren zur Herstellung von Festelektrolytschichten fuer galvanische Zellen |
| US4486286A (en) * | 1982-09-28 | 1984-12-04 | Nerken Research Corp. | Method of depositing a carbon film on a substrate and products obtained thereby |
| US4437962A (en) | 1983-05-17 | 1984-03-20 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Diamondlike flake composites |
| US4495044A (en) * | 1983-05-17 | 1985-01-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Diamondlike flakes |
| US4524106A (en) * | 1983-06-23 | 1985-06-18 | Energy Conversion Devices, Inc. | Decorative carbon coating and method |
| DE3335623A1 (de) * | 1983-09-30 | 1985-04-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer kohlenstoff enthaltenden schicht, kohlenstoff enthaltende schicht, verwendung einer kohlenstoff enthaltenden schicht und vorrichtung zur durchfuehrung eines verfahrens zur herstellung einer kohlenstoff enthaltenden schicht |
| US5387247A (en) * | 1983-10-25 | 1995-02-07 | Sorin Biomedia S.P.A. | Prosthetic device having a biocompatible carbon film thereon and a method of and apparatus for forming such device |
| CA1235087A (en) * | 1983-11-28 | 1988-04-12 | Akio Hiraki | Diamond-like thin film and method for making the same |
| CA1232228A (en) * | 1984-03-13 | 1988-02-02 | Tatsuro Miyasato | Coating film and method and apparatus for producing the same |
| US5084151A (en) * | 1985-11-26 | 1992-01-28 | Sorin Biomedica S.P.A. | Method and apparatus for forming prosthetic device having a biocompatible carbon film thereon |
| US5073241A (en) * | 1986-01-31 | 1991-12-17 | Kabushiki Kaisha Meidenshae | Method for carbon film production |
| US4828668A (en) * | 1986-03-10 | 1989-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering system for deposition on parallel substrates |
| IT1196836B (it) * | 1986-12-12 | 1988-11-25 | Sorin Biomedica Spa | Protesi in materiale polimerico con rivestimento di carbonio biocompatibile |
| US5087478A (en) * | 1989-08-01 | 1992-02-11 | Hughes Aircraft Company | Deposition method and apparatus using plasma discharge |
| JPH0830260B2 (ja) * | 1990-08-22 | 1996-03-27 | アネルバ株式会社 | 真空処理装置 |
| US5313094A (en) * | 1992-01-28 | 1994-05-17 | International Business Machines Corportion | Thermal dissipation of integrated circuits using diamond paths |
| US5391510A (en) * | 1992-02-28 | 1995-02-21 | International Business Machines Corporation | Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps |
| TW366367B (en) * | 1995-01-26 | 1999-08-11 | Ibm | Sputter deposition of hydrogenated amorphous carbon film |
| EP0989211B1 (en) * | 1997-04-16 | 2004-08-11 | OOO "Vysokie Tekhnologii" | Process for obtaining diamond layers by gaseous-phase synthesis |
| US5874745A (en) * | 1997-08-05 | 1999-02-23 | International Business Machines Corporation | Thin film transistor with carbonaceous gate dielectric |
| RU2140428C1 (ru) * | 1998-07-07 | 1999-10-27 | Кириллов Леонид Иванович | Установка для производства сажи и алмазов |
| RU2139236C1 (ru) * | 1998-07-07 | 1999-10-10 | Кириллов Леонид Иванович | Установка для производства водорода, сажи и алмазов |
| US6660365B1 (en) | 1998-12-21 | 2003-12-09 | Cardinal Cg Company | Soil-resistant coating for glass surfaces |
| US6964731B1 (en) | 1998-12-21 | 2005-11-15 | Cardinal Cg Company | Soil-resistant coating for glass surfaces |
| US6974629B1 (en) | 1999-08-06 | 2005-12-13 | Cardinal Cg Company | Low-emissivity, soil-resistant coating for glass surfaces |
| US6573565B2 (en) * | 1999-07-28 | 2003-06-03 | International Business Machines Corporation | Method and structure for providing improved thermal conduction for silicon semiconductor devices |
| US6508911B1 (en) | 1999-08-16 | 2003-01-21 | Applied Materials Inc. | Diamond coated parts in a plasma reactor |
| RU2178435C2 (ru) * | 2000-04-10 | 2002-01-20 | Кириллов Леонид Иванович | Устройство для производства алмазов |
| RU2179174C2 (ru) * | 2000-04-17 | 2002-02-10 | Кириллов Леонид Иванович | Устройство для производства алмазов |
| RU2179987C2 (ru) * | 2000-05-22 | 2002-02-27 | Кириллов Леонид Иванович | Устройство для производства алмазов |
| US7866343B2 (en) | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
| US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
| US7866342B2 (en) | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
| US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
| US6904935B2 (en) | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
| CA2550331A1 (en) | 2003-12-22 | 2005-07-14 | Cardinal Cg Compagny | Graded photocatalytic coatings |
| WO2006017349A1 (en) | 2004-07-12 | 2006-02-16 | Cardinal Cg Company | Low-maintenance coatings |
| US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
| US8092660B2 (en) | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
| US20070026205A1 (en) | 2005-08-01 | 2007-02-01 | Vapor Technologies Inc. | Article having patterned decorative coating |
| US7989094B2 (en) * | 2006-04-19 | 2011-08-02 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
| US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
| CA2664368A1 (en) | 2007-09-14 | 2009-03-19 | Cardinal Cg Company | Low-maintenance coating technology |
| RU2560380C1 (ru) * | 2014-07-18 | 2015-08-20 | Федеральное Государственное Автономное Образовательное Учреждение Высшего Профессионального Образования "Сибирский Федеральный Университет" | Способ получения искусственных алмазов из графита |
| EP3541762B1 (en) | 2016-11-17 | 2022-03-02 | Cardinal CG Company | Static-dissipative coating technology |
-
1971
- 1971-10-28 SU SU1708806A patent/SU411037A1/ru active
-
1972
- 1972-10-20 CH CH1531672A patent/CH582622A5/xx not_active IP Right Cessation
- 1972-10-23 GB GB4865772A patent/GB1396987A/en not_active Expired
- 1972-10-24 US US00300350A patent/US3840451A/en not_active Expired - Lifetime
- 1972-10-25 DE DE2252343A patent/DE2252343C3/de not_active Expired
- 1972-10-25 FR FR7237850A patent/FR2157957B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2157957A1 (cg-RX-API-DMAC10.html) | 1973-06-08 |
| DE2252343A1 (de) | 1973-05-10 |
| FR2157957B1 (cg-RX-API-DMAC10.html) | 1976-10-29 |
| GB1396987A (en) | 1975-06-11 |
| DE2252343B2 (de) | 1977-11-17 |
| US3840451A (en) | 1974-10-08 |
| CH582622A5 (cg-RX-API-DMAC10.html) | 1976-12-15 |
| SU411037A1 (ru) | 1974-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: VON FUENER, A., DIPL.-CHEM. DR.RER.NAT. EBBINGHAUS, D., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN |
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| 8339 | Ceased/non-payment of the annual fee |