DE2246899C3 - Vielschicht-Halbleiterbauelement - Google Patents
Vielschicht-HalbleiterbauelementInfo
- Publication number
- DE2246899C3 DE2246899C3 DE2246899A DE2246899A DE2246899C3 DE 2246899 C3 DE2246899 C3 DE 2246899C3 DE 2246899 A DE2246899 A DE 2246899A DE 2246899 A DE2246899 A DE 2246899A DE 2246899 C3 DE2246899 C3 DE 2246899C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- main
- layer
- auxiliary
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 230000000694 effects Effects 0.000 description 13
- 238000006073 displacement reaction Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7636171A JPS5619109B2 (enExample) | 1971-10-01 | 1971-10-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2246899A1 DE2246899A1 (de) | 1973-04-12 |
| DE2246899B2 DE2246899B2 (de) | 1977-06-23 |
| DE2246899C3 true DE2246899C3 (de) | 1981-11-05 |
Family
ID=13603204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2246899A Expired DE2246899C3 (de) | 1971-10-01 | 1972-09-25 | Vielschicht-Halbleiterbauelement |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5619109B2 (enExample) |
| CA (1) | CA971676A (enExample) |
| DE (1) | DE2246899C3 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4028721A (en) * | 1973-08-01 | 1977-06-07 | Hitachi, Ltd. | Semiconductor controlled rectifier device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
| US3196330A (en) * | 1960-06-10 | 1965-07-20 | Gen Electric | Semiconductor devices and methods of making same |
| CH472119A (de) * | 1964-11-28 | 1969-04-30 | Licentia Gmbh | Steuerbarer Halbleitergleichrichter |
| US3356862A (en) * | 1964-12-02 | 1967-12-05 | Int Rectifier Corp | High speed controlled rectifier |
| CH447392A (de) * | 1965-05-14 | 1967-11-30 | Licentia Gmbh | Gleichrichterschaltung |
| SE339267C (sv) * | 1966-10-31 | 1973-01-15 | Asea Ab | Styrbar halvledaranordning av PNPN-typ |
-
1971
- 1971-10-01 JP JP7636171A patent/JPS5619109B2/ja not_active Expired
-
1972
- 1972-09-25 DE DE2246899A patent/DE2246899C3/de not_active Expired
- 1972-09-28 CA CA152,746A patent/CA971676A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2246899A1 (de) | 1973-04-12 |
| CA971676A (en) | 1975-07-22 |
| JPS5619109B2 (enExample) | 1981-05-06 |
| JPS4843280A (enExample) | 1973-06-22 |
| DE2246899B2 (de) | 1977-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2712533B2 (de) | Abschaltbarer Thyristor | |
| DE2241306A1 (de) | Transistor mit veraenderlichem ballastwiderstand | |
| DE3401407C2 (enExample) | ||
| DE2945366C2 (enExample) | ||
| DE1489894B2 (de) | In zwei richtungen schaltbares halbleiterbauelement | |
| DE2945347C2 (enExample) | ||
| DE3200807C2 (de) | Abschaltbare Leistungshalbleiteranordnung | |
| DE2211116A1 (de) | Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps | |
| DE3612367C2 (enExample) | ||
| EP0430133B1 (de) | Leistungs-Halbleiterbauelement mit Emitterkurzschlüssen | |
| DE3328231C2 (enExample) | ||
| DE3540433A1 (de) | Integriertes mosfet-bauelement | |
| DE2016738B2 (de) | Zweirichtungs-Thyristortriode | |
| DE2625009C2 (de) | Thyristortriode | |
| DE3722425C2 (enExample) | ||
| DE2329398B2 (de) | In Ruckwartsrichtung leitendes Thyristorbauelement | |
| DE2246899C3 (de) | Vielschicht-Halbleiterbauelement | |
| DE2923693C2 (enExample) | ||
| EP0222280A2 (de) | Thyristor mit steuerbaren Emitter-Basis-Kurzschlüssen | |
| DE2425364A1 (de) | Gate-gesteuerter halbleitergleichrichter | |
| DE2406866C3 (de) | Steuerbarer Halbleitergleichrichter | |
| DE69032766T2 (de) | Gate Turn-off-Thyristor | |
| DE2164644C3 (de) | Steuerbarer Halbleitergleichrichter | |
| DE2507104C2 (de) | Thyristor für hohe Frequenzen | |
| EP0039875B1 (de) | Thyristor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |