CA971676A - Multi-layer semiconductor device - Google Patents
Multi-layer semiconductor deviceInfo
- Publication number
- CA971676A CA971676A CA152,746A CA152746A CA971676A CA 971676 A CA971676 A CA 971676A CA 152746 A CA152746 A CA 152746A CA 971676 A CA971676 A CA 971676A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- layer semiconductor
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7636171A JPS5619109B2 (en) | 1971-10-01 | 1971-10-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA971676A true CA971676A (en) | 1975-07-22 |
Family
ID=13603204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA152,746A Expired CA971676A (en) | 1971-10-01 | 1972-09-28 | Multi-layer semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5619109B2 (en) |
CA (1) | CA971676A (en) |
DE (1) | DE2246899C3 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4028721A (en) * | 1973-08-01 | 1977-06-07 | Hitachi, Ltd. | Semiconductor controlled rectifier device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
US3196330A (en) * | 1960-06-10 | 1965-07-20 | Gen Electric | Semiconductor devices and methods of making same |
CH472119A (en) * | 1964-11-28 | 1969-04-30 | Licentia Gmbh | Controllable semiconductor rectifier |
US3356862A (en) * | 1964-12-02 | 1967-12-05 | Int Rectifier Corp | High speed controlled rectifier |
CH447392A (en) * | 1965-05-14 | 1967-11-30 | Licentia Gmbh | Rectifier circuit |
SE339267C (en) * | 1966-10-31 | 1973-01-15 | Asea Ab | Controllable semiconductor device of PNPN type |
-
1971
- 1971-10-01 JP JP7636171A patent/JPS5619109B2/ja not_active Expired
-
1972
- 1972-09-25 DE DE19722246899 patent/DE2246899C3/en not_active Expired
- 1972-09-28 CA CA152,746A patent/CA971676A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2246899B2 (en) | 1977-06-23 |
JPS5619109B2 (en) | 1981-05-06 |
JPS4843280A (en) | 1973-06-22 |
DE2246899C3 (en) | 1981-11-05 |
DE2246899A1 (en) | 1973-04-12 |
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