DE2240276A1 - Ladungsverschiebeanordnung als photodetektor - Google Patents
Ladungsverschiebeanordnung als photodetektorInfo
- Publication number
- DE2240276A1 DE2240276A1 DE2240276A DE2240276A DE2240276A1 DE 2240276 A1 DE2240276 A1 DE 2240276A1 DE 2240276 A DE2240276 A DE 2240276A DE 2240276 A DE2240276 A DE 2240276A DE 2240276 A1 DE2240276 A1 DE 2240276A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- substrate
- semiconductor
- electrodes
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2240276A DE2240276A1 (de) | 1972-08-16 | 1972-08-16 | Ladungsverschiebeanordnung als photodetektor |
| CH993473A CH557093A (de) | 1972-08-16 | 1973-07-09 | Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht. |
| GB3309073A GB1432986A (en) | 1972-08-16 | 1973-07-11 | Charge-coupled arrangements |
| IT27655/73A IT998330B (it) | 1972-08-16 | 1973-08-08 | Dispositivo elettrico a spostamento di carica utile quale fotorivela tore |
| LU68227A LU68227A1 (cs) | 1972-08-16 | 1973-08-14 | |
| FR7329667A FR2196525B3 (cs) | 1972-08-16 | 1973-08-14 | |
| NL7311204A NL7311204A (cs) | 1972-08-16 | 1973-08-14 | |
| BE134559A BE803590A (fr) | 1972-08-16 | 1973-08-14 | Dispositif a deplacement de charges fonctionnant en photo-detecteur |
| JP48091027A JPS4965190A (cs) | 1972-08-16 | 1973-08-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2240276A DE2240276A1 (de) | 1972-08-16 | 1972-08-16 | Ladungsverschiebeanordnung als photodetektor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2240276A1 true DE2240276A1 (de) | 1974-02-28 |
Family
ID=5853710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2240276A Pending DE2240276A1 (de) | 1972-08-16 | 1972-08-16 | Ladungsverschiebeanordnung als photodetektor |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4965190A (cs) |
| BE (1) | BE803590A (cs) |
| CH (1) | CH557093A (cs) |
| DE (1) | DE2240276A1 (cs) |
| FR (1) | FR2196525B3 (cs) |
| GB (1) | GB1432986A (cs) |
| IT (1) | IT998330B (cs) |
| LU (1) | LU68227A1 (cs) |
| NL (1) | NL7311204A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983205B (zh) * | 2012-12-04 | 2015-08-19 | 中国科学院新疆理化技术研究所 | 一种硅基光电探测器及制备方法和用途 |
-
1972
- 1972-08-16 DE DE2240276A patent/DE2240276A1/de active Pending
-
1973
- 1973-07-09 CH CH993473A patent/CH557093A/xx not_active IP Right Cessation
- 1973-07-11 GB GB3309073A patent/GB1432986A/en not_active Expired
- 1973-08-08 IT IT27655/73A patent/IT998330B/it active
- 1973-08-14 FR FR7329667A patent/FR2196525B3/fr not_active Expired
- 1973-08-14 BE BE134559A patent/BE803590A/xx unknown
- 1973-08-14 NL NL7311204A patent/NL7311204A/xx unknown
- 1973-08-14 LU LU68227A patent/LU68227A1/xx unknown
- 1973-08-15 JP JP48091027A patent/JPS4965190A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1432986A (en) | 1976-04-22 |
| BE803590A (fr) | 1974-02-14 |
| FR2196525B3 (cs) | 1976-07-30 |
| CH557093A (de) | 1974-12-13 |
| IT998330B (it) | 1976-01-20 |
| JPS4965190A (cs) | 1974-06-24 |
| LU68227A1 (cs) | 1974-02-21 |
| FR2196525A1 (cs) | 1974-03-15 |
| NL7311204A (cs) | 1974-02-19 |
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