DE69023013T2 - Elektrooptischer Modulator mit gekoppelter Quantum-Well-Struktur. - Google Patents

Elektrooptischer Modulator mit gekoppelter Quantum-Well-Struktur.

Info

Publication number
DE69023013T2
DE69023013T2 DE69023013T DE69023013T DE69023013T2 DE 69023013 T2 DE69023013 T2 DE 69023013T2 DE 69023013 T DE69023013 T DE 69023013T DE 69023013 T DE69023013 T DE 69023013T DE 69023013 T2 DE69023013 T2 DE 69023013T2
Authority
DE
Germany
Prior art keywords
electro
quantum well
optical modulator
well structure
coupled quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023013T
Other languages
English (en)
Other versions
DE69023013D1 (de
Inventor
Domenico Campi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telecom Italia SpA
Original Assignee
CSELT Centro Studi e Laboratori Telecomunicazioni SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSELT Centro Studi e Laboratori Telecomunicazioni SpA filed Critical CSELT Centro Studi e Laboratori Telecomunicazioni SpA
Application granted granted Critical
Publication of DE69023013D1 publication Critical patent/DE69023013D1/de
Publication of DE69023013T2 publication Critical patent/DE69023013T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G02F1/0158—Blue-shift of the absorption band
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/01733—Coupled or double quantum wells
DE69023013T 1989-01-26 1990-01-24 Elektrooptischer Modulator mit gekoppelter Quantum-Well-Struktur. Expired - Fee Related DE69023013T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8967045A IT1232381B (it) 1989-01-26 1989-01-26 Modulatore elettro ottico a doppio pozzo quantico

Publications (2)

Publication Number Publication Date
DE69023013D1 DE69023013D1 (de) 1995-11-23
DE69023013T2 true DE69023013T2 (de) 1996-04-18

Family

ID=11299149

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69023013T Expired - Fee Related DE69023013T2 (de) 1989-01-26 1990-01-24 Elektrooptischer Modulator mit gekoppelter Quantum-Well-Struktur.
DE90101380T Pending DE380072T1 (de) 1989-01-26 1990-01-24 Elektrooptischer Modulator mit gekoppelter Quantum-Well-Struktur.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE90101380T Pending DE380072T1 (de) 1989-01-26 1990-01-24 Elektrooptischer Modulator mit gekoppelter Quantum-Well-Struktur.

Country Status (6)

Country Link
US (1) US5105301A (de)
EP (1) EP0380072B1 (de)
JP (1) JPH02239222A (de)
CA (1) CA2008513C (de)
DE (2) DE69023013T2 (de)
IT (1) IT1232381B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311009A (en) * 1992-07-31 1994-05-10 At&T Bell Laboratories Quantum well device for producing localized electron states for detectors and modulators
US5345328A (en) * 1992-08-12 1994-09-06 Sandia Corporation Tandem resonator reflectance modulator
US5436756A (en) * 1992-09-30 1995-07-25 At&T Bell Laboratories Suppressed photocurrent, quantum well optical modulation device
FR2696874B1 (fr) * 1992-10-13 1994-12-09 Thomson Csf Modulateur d'onde électromagnétique à puits quantiques.
US5323019A (en) * 1993-04-20 1994-06-21 The United States Of America As Represented By The Secretary Of The Army All optical multiple quantum well optical modulator
DE4313488A1 (de) * 1993-04-24 1994-10-27 Sel Alcatel Ag Optoelektronisches Halbleiterbauelement
US5485014A (en) * 1993-12-30 1996-01-16 The University Of Connecticut Multiple quantum well birefringent spatial light modulator
DE19581630T1 (de) * 1994-04-26 1997-04-17 Ericsson Telefon Ab L M Optischer Absorber mit Überstruktur
US5528707A (en) * 1994-09-30 1996-06-18 Honeywell Inc. Bidirectional optical modulator having lightwave signal conservation
US5608566A (en) * 1995-08-11 1997-03-04 The United States Of America As Represented By The Secretary Of The Army Multi-directional electro-optic switch
US5647029A (en) * 1995-11-27 1997-07-08 Lucent Technologies Inc. Traveling wave quantum well waveguide modulators using velocity matching for improved frequency performance
FR2748129B1 (fr) * 1996-04-29 1998-06-12 Alsthom Cge Alcatel Modulateur electro-optique a puits quantiques
US6466703B1 (en) 2000-04-07 2002-10-15 Hrl Laboratories, Llc Method and apparatus for electro-optic delay generation of optical signals
US6819476B2 (en) * 2002-05-03 2004-11-16 The Boeing Company Active optical system for changing the wavelength of an image
US6710367B1 (en) * 2002-05-17 2004-03-23 The United States Of America As Represented By The Secretary Of The Army Multiple quantum well semiconductor optical modulator
US7430376B1 (en) 2004-11-29 2008-09-30 Hrl Laboratories, Llc All-optical delay generator for PPM communication systems based on a non-linear waveguide with a chirped DBR
US7196349B2 (en) * 2005-02-17 2007-03-27 Bae Systems Information And Electronic Systems Integration Inc. Resonant cavity enhanced multi-quantum well light modulator and detector
US7180648B2 (en) * 2005-06-13 2007-02-20 Massachusetts Institute Of Technology Electro-absorption modulator device and methods for fabricating the same
KR100987793B1 (ko) * 2008-10-10 2010-10-13 한국전자통신연구원 반사형 반도체 광 증폭기 및 이를 이용하는 광신호 처리방법
US8345349B2 (en) * 2009-05-27 2013-01-01 Hewlett-Packard Development Company, L.P. Compact optical resonators
KR102477094B1 (ko) 2016-01-08 2022-12-13 삼성전자주식회사 비대칭 다준위 에너지를 갖는 3중 연결 양자우물 구조를 포함하는 광학 소자

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439782A (en) * 1980-11-21 1984-03-27 University Of Illinois Foundation Semiconductor device with heterojunction of Alx Ga1-x As--AlAs--Ga
JPS59116612A (ja) * 1982-12-23 1984-07-05 Toshiba Corp 光変調器
JPS6050979A (ja) * 1983-08-30 1985-03-22 Semiconductor Energy Lab Co Ltd 発光半導体装置
US4716449A (en) * 1984-03-14 1987-12-29 American Telephone And Telegraph Company At&T Bell Laboratories Nonlinear and bistable optical device
JPH0227648B2 (ja) * 1985-01-28 1990-06-19 Nippon Telegraph & Telephone Ryoshiidogatahikarihenchoki
JPH0823631B2 (ja) * 1985-02-13 1996-03-06 日本電気株式会社 光変調器
JPS61256319A (ja) * 1985-05-10 1986-11-13 Hitachi Ltd 光変調器
JPS623221A (ja) * 1985-06-28 1987-01-09 Nec Corp 光変調器
JPH0650366B2 (ja) * 1985-06-28 1994-06-29 日本電気株式会社 光変調器
JPS62169115A (ja) * 1986-01-21 1987-07-25 Nec Corp 光変調器
JPH0728047B2 (ja) * 1986-02-17 1995-03-29 日本電気株式会社 光トランジスタ
JPH0262190A (ja) * 1988-08-26 1990-03-02 Mitsubishi Electric Corp 監視装置

Also Published As

Publication number Publication date
JPH02239222A (ja) 1990-09-21
JPH0529888B2 (de) 1993-05-06
EP0380072B1 (de) 1995-10-18
EP0380072A3 (de) 1992-10-21
IT1232381B (it) 1992-02-17
US5105301A (en) 1992-04-14
IT8967045A0 (it) 1989-01-26
DE69023013D1 (de) 1995-11-23
EP0380072A2 (de) 1990-08-01
CA2008513A1 (en) 1990-07-26
DE380072T1 (de) 1993-10-14
CA2008513C (en) 1994-01-25

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee