DE2234973B2 - MIS-Feldeffekttransistor - Google Patents

MIS-Feldeffekttransistor

Info

Publication number
DE2234973B2
DE2234973B2 DE2234973A DE2234973A DE2234973B2 DE 2234973 B2 DE2234973 B2 DE 2234973B2 DE 2234973 A DE2234973 A DE 2234973A DE 2234973 A DE2234973 A DE 2234973A DE 2234973 B2 DE2234973 B2 DE 2234973B2
Authority
DE
Germany
Prior art keywords
area
source
gate electrode
field effect
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2234973A
Other languages
German (de)
English (en)
Other versions
DE2234973A1 (de
Inventor
Seiichi Machida Tokio Watanabe (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2234973A1 publication Critical patent/DE2234973A1/de
Publication of DE2234973B2 publication Critical patent/DE2234973B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE2234973A 1971-07-17 1972-07-17 MIS-Feldeffekttransistor Ceased DE2234973B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6328171 1971-07-17

Publications (2)

Publication Number Publication Date
DE2234973A1 DE2234973A1 (de) 1973-02-01
DE2234973B2 true DE2234973B2 (de) 1974-10-03

Family

ID=13224766

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2234973A Ceased DE2234973B2 (de) 1971-07-17 1972-07-17 MIS-Feldeffekttransistor

Country Status (7)

Country Link
US (1) US3806773A (enExample)
CA (1) CA967683A (enExample)
DE (1) DE2234973B2 (enExample)
FR (1) FR2146323B1 (enExample)
GB (1) GB1400541A (enExample)
IT (1) IT962927B (enExample)
NL (1) NL7209822A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024084A (enExample) * 1973-07-05 1975-03-14
US3879640A (en) * 1974-02-11 1975-04-22 Rca Corp Protective diode network for MOS devices
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS55136726A (en) * 1979-04-11 1980-10-24 Nec Corp High voltage mos inverter and its drive method
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS5836169A (ja) * 1981-08-28 1983-03-03 Fuji Electric Co Ltd サイリスタ監視装置
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
US5212398A (en) * 1989-11-30 1993-05-18 Kabushiki Kaisha Toshiba BiMOS structure having a protective diode
EP0646964B1 (en) * 1993-09-30 1999-12-15 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof
DE69328932T2 (de) * 1993-12-13 2000-12-14 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US6949802B2 (en) * 2003-11-20 2005-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection structure
JP2006294719A (ja) * 2005-04-07 2006-10-26 Oki Electric Ind Co Ltd 半導体装置
US8476709B2 (en) * 2006-08-24 2013-07-02 Infineon Technologies Ag ESD protection device and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.

Also Published As

Publication number Publication date
FR2146323A1 (enExample) 1973-03-02
FR2146323B1 (enExample) 1975-03-07
DE2234973A1 (de) 1973-02-01
IT962927B (it) 1973-12-31
CA967683A (en) 1975-05-13
GB1400541A (en) 1975-07-16
NL7209822A (enExample) 1973-01-19
US3806773A (en) 1974-04-23

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Legal Events

Date Code Title Description
8235 Patent refused