FR2146323A1 - - Google Patents

Info

Publication number
FR2146323A1
FR2146323A1 FR7225759A FR7225759A FR2146323A1 FR 2146323 A1 FR2146323 A1 FR 2146323A1 FR 7225759 A FR7225759 A FR 7225759A FR 7225759 A FR7225759 A FR 7225759A FR 2146323 A1 FR2146323 A1 FR 2146323A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7225759A
Other languages
French (fr)
Other versions
FR2146323B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2146323A1 publication Critical patent/FR2146323A1/fr
Application granted granted Critical
Publication of FR2146323B1 publication Critical patent/FR2146323B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR7225759A 1971-07-17 1972-07-17 Expired FR2146323B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6328171 1971-07-17

Publications (2)

Publication Number Publication Date
FR2146323A1 true FR2146323A1 (enExample) 1973-03-02
FR2146323B1 FR2146323B1 (enExample) 1975-03-07

Family

ID=13224766

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7225759A Expired FR2146323B1 (enExample) 1971-07-17 1972-07-17

Country Status (7)

Country Link
US (1) US3806773A (enExample)
CA (1) CA967683A (enExample)
DE (1) DE2234973B2 (enExample)
FR (1) FR2146323B1 (enExample)
GB (1) GB1400541A (enExample)
IT (1) IT962927B (enExample)
NL (1) NL7209822A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0646964A1 (en) * 1993-09-30 1995-04-05 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof
EP0657933A1 (en) * 1993-12-13 1995-06-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integrated structure active clamp for the protection of power semiconductor devices against overvoltages

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024084A (enExample) * 1973-07-05 1975-03-14
US3879640A (en) * 1974-02-11 1975-04-22 Rca Corp Protective diode network for MOS devices
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS55136726A (en) * 1979-04-11 1980-10-24 Nec Corp High voltage mos inverter and its drive method
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS5836169A (ja) * 1981-08-28 1983-03-03 Fuji Electric Co Ltd サイリスタ監視装置
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
US5212398A (en) * 1989-11-30 1993-05-18 Kabushiki Kaisha Toshiba BiMOS structure having a protective diode
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US6949802B2 (en) * 2003-11-20 2005-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection structure
JP2006294719A (ja) * 2005-04-07 2006-10-26 Oki Electric Ind Co Ltd 半導体装置
US8476709B2 (en) * 2006-08-24 2013-07-02 Infineon Technologies Ag ESD protection device and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0646964A1 (en) * 1993-09-30 1995-04-05 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof
US5654225A (en) * 1993-09-30 1997-08-05 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof
US5777367A (en) * 1993-09-30 1998-07-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure active clamp for the protection of power devices against overvoltages
EP0657933A1 (en) * 1993-12-13 1995-06-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Integrated structure active clamp for the protection of power semiconductor devices against overvoltages
US5530271A (en) * 1993-12-13 1996-06-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure active clamp for the protection of power semiconductor devices against overvoltages

Also Published As

Publication number Publication date
FR2146323B1 (enExample) 1975-03-07
DE2234973A1 (de) 1973-02-01
IT962927B (it) 1973-12-31
CA967683A (en) 1975-05-13
GB1400541A (en) 1975-07-16
DE2234973B2 (de) 1974-10-03
NL7209822A (enExample) 1973-01-19
US3806773A (en) 1974-04-23

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Legal Events

Date Code Title Description
ST Notification of lapse