DE2233294C2 - Integrierte logische Schaltungsanordnung mit Sperrschicht-Feldeffekttransistor - Google Patents
Integrierte logische Schaltungsanordnung mit Sperrschicht-FeldeffekttransistorInfo
- Publication number
- DE2233294C2 DE2233294C2 DE2233294A DE2233294A DE2233294C2 DE 2233294 C2 DE2233294 C2 DE 2233294C2 DE 2233294 A DE2233294 A DE 2233294A DE 2233294 A DE2233294 A DE 2233294A DE 2233294 C2 DE2233294 C2 DE 2233294C2
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- field effect
- effect transistor
- signal value
- circuit arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title claims description 24
- 230000000873 masking effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 241001631457 Cannula Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7124683A FR2144574B1 (enrdf_load_stackoverflow) | 1971-07-06 | 1971-07-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2233294A1 DE2233294A1 (de) | 1973-01-18 |
| DE2233294C2 true DE2233294C2 (de) | 1982-05-13 |
Family
ID=9079899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2233294A Expired DE2233294C2 (de) | 1971-07-06 | 1972-07-06 | Integrierte logische Schaltungsanordnung mit Sperrschicht-Feldeffekttransistor |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2233294C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2144574B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1396556A (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD40607A (enrdf_load_stackoverflow) * | ||||
| NL6813833A (enrdf_load_stackoverflow) * | 1968-09-27 | 1970-04-01 |
-
1971
- 1971-07-06 FR FR7124683A patent/FR2144574B1/fr not_active Expired
-
1972
- 1972-07-04 GB GB3130272A patent/GB1396556A/en not_active Expired
- 1972-07-06 DE DE2233294A patent/DE2233294C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2144574A1 (enrdf_load_stackoverflow) | 1973-02-16 |
| FR2144574B1 (enrdf_load_stackoverflow) | 1976-09-17 |
| DE2233294A1 (de) | 1973-01-18 |
| GB1396556A (en) | 1975-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8328 | Change in the person/name/address of the agent | ||
| 8339 | Ceased/non-payment of the annual fee |