DE69715746T2 - Statischer selbsthaltender Mikroschalter - Google Patents
Statischer selbsthaltender MikroschalterInfo
- Publication number
- DE69715746T2 DE69715746T2 DE69715746T DE69715746T DE69715746T2 DE 69715746 T2 DE69715746 T2 DE 69715746T2 DE 69715746 T DE69715746 T DE 69715746T DE 69715746 T DE69715746 T DE 69715746T DE 69715746 T2 DE69715746 T2 DE 69715746T2
- Authority
- DE
- Germany
- Prior art keywords
- microswitch
- holding
- static self
- static
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/02—Details
- H02H3/025—Disconnection after limiting, e.g. when limiting is not sufficient or for facilitating disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9609132A FR2751489B1 (fr) | 1996-07-16 | 1996-07-16 | Microdisjoncteur statique autoblocable |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69715746D1 DE69715746D1 (de) | 2002-10-31 |
DE69715746T2 true DE69715746T2 (de) | 2003-05-22 |
Family
ID=9494278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69715746T Expired - Fee Related DE69715746T2 (de) | 1996-07-16 | 1997-07-09 | Statischer selbsthaltender Mikroschalter |
Country Status (4)
Country | Link |
---|---|
US (1) | US6107664A (de) |
EP (1) | EP0820135B1 (de) |
DE (1) | DE69715746T2 (de) |
FR (1) | FR2751489B1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6271067B1 (en) | 1998-02-27 | 2001-08-07 | Micron Technology, Inc. | Methods of forming field effect transistors and field effect transistor circuitry |
JP3660566B2 (ja) * | 2000-06-30 | 2005-06-15 | 新電元工業株式会社 | 過電流制限型半導体素子 |
US20020125507A1 (en) * | 2001-03-07 | 2002-09-12 | Washburn James Ray | Interruptable high-voltage current limiter suitable for monolithic integration |
US6900093B2 (en) * | 2003-05-16 | 2005-05-31 | Jlj, Inc. | Method of fabricating a zener diode chip for use as a shunt in Christmas tree lighting |
EP2200141B1 (de) | 2008-12-18 | 2011-10-12 | Siemens Aktiengesellschaft | Schaltungsanordnung zum Schutz eines elektrischen Verbrauchers |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5128823A (en) * | 1989-06-14 | 1992-07-07 | Nippondenso Co., Ltd. | Power semiconductor apparatus |
FR2649828B1 (fr) * | 1989-07-17 | 1991-10-31 | Sgs Thomson Microelectronics | Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener |
WO1994018736A1 (en) * | 1993-02-10 | 1994-08-18 | Masaya Maruo | Overcurrent protective circuit and semiconductor device |
DE69415958T2 (de) * | 1994-03-29 | 1999-05-27 | St Microelectronics Srl | Leistungsendstufe mit begrenzter Stromsenkung während Hochimpedanzphase |
EP0766395A3 (de) * | 1995-09-27 | 1999-04-21 | Siemens Aktiengesellschaft | Leistungstransistor mit Kurzschlussschutz |
-
1996
- 1996-07-16 FR FR9609132A patent/FR2751489B1/fr not_active Expired - Fee Related
-
1997
- 1997-07-09 DE DE69715746T patent/DE69715746T2/de not_active Expired - Fee Related
- 1997-07-09 EP EP97410072A patent/EP0820135B1/de not_active Expired - Lifetime
- 1997-07-14 US US08/891,774 patent/US6107664A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6107664A (en) | 2000-08-22 |
EP0820135B1 (de) | 2002-09-25 |
FR2751489B1 (fr) | 1998-10-16 |
FR2751489A1 (fr) | 1998-01-23 |
EP0820135A1 (de) | 1998-01-21 |
DE69715746D1 (de) | 2002-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |