DE69715746D1 - Statischer selbsthaltender Mikroschalter - Google Patents

Statischer selbsthaltender Mikroschalter

Info

Publication number
DE69715746D1
DE69715746D1 DE69715746T DE69715746T DE69715746D1 DE 69715746 D1 DE69715746 D1 DE 69715746D1 DE 69715746 T DE69715746 T DE 69715746T DE 69715746 T DE69715746 T DE 69715746T DE 69715746 D1 DE69715746 D1 DE 69715746D1
Authority
DE
Germany
Prior art keywords
microswitch
holding
static self
static
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69715746T
Other languages
English (en)
Other versions
DE69715746T2 (de
Inventor
Jean-Baptiste Quoirin
Jean Jalade
Jean-Louis Sanchez
Jean-Pierre Laur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69715746D1 publication Critical patent/DE69715746D1/de
Publication of DE69715746T2 publication Critical patent/DE69715746T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02—Details
    • H02H3/025—Disconnection after limiting, e.g. when limiting is not sufficient or for facilitating disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025—Current limitation using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69715746T 1996-07-16 1997-07-09 Statischer selbsthaltender Mikroschalter Expired - Fee Related DE69715746T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9609132A FR2751489B1 (fr) 1996-07-16 1996-07-16 Microdisjoncteur statique autoblocable

Publications (2)

Publication Number Publication Date
DE69715746D1 true DE69715746D1 (de) 2002-10-31
DE69715746T2 DE69715746T2 (de) 2003-05-22

Family

ID=9494278

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69715746T Expired - Fee Related DE69715746T2 (de) 1996-07-16 1997-07-09 Statischer selbsthaltender Mikroschalter

Country Status (4)

Country Link
US (1) US6107664A (de)
EP (1) EP0820135B1 (de)
DE (1) DE69715746T2 (de)
FR (1) FR2751489B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271067B1 (en) * 1998-02-27 2001-08-07 Micron Technology, Inc. Methods of forming field effect transistors and field effect transistor circuitry
JP3660566B2 (ja) * 2000-06-30 2005-06-15 新電元工業株式会社 過電流制限型半導体素子
US20020125507A1 (en) * 2001-03-07 2002-09-12 Washburn James Ray Interruptable high-voltage current limiter suitable for monolithic integration
US6900093B2 (en) * 2003-05-16 2005-05-31 Jlj, Inc. Method of fabricating a zener diode chip for use as a shunt in Christmas tree lighting
EP2200141B1 (de) 2008-12-18 2011-10-12 Siemens Aktiengesellschaft Schaltungsanordnung zum Schutz eines elektrischen Verbrauchers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128823A (en) * 1989-06-14 1992-07-07 Nippondenso Co., Ltd. Power semiconductor apparatus
FR2649828B1 (fr) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
US5696659A (en) * 1993-02-10 1997-12-09 Maruo; Masaya Overcurrent protective circuit and semiconductor device
EP0675584B1 (de) * 1994-03-29 1999-01-13 STMicroelectronics S.r.l. Leistungsendstufe mit begrenzter Stromsenkung während Hochimpedanzphase
EP0766395A3 (de) * 1995-09-27 1999-04-21 Siemens Aktiengesellschaft Leistungstransistor mit Kurzschlussschutz

Also Published As

Publication number Publication date
EP0820135A1 (de) 1998-01-21
EP0820135B1 (de) 2002-09-25
DE69715746T2 (de) 2003-05-22
FR2751489A1 (fr) 1998-01-23
FR2751489B1 (fr) 1998-10-16
US6107664A (en) 2000-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee