GB1396556A - Logic circuits employing junction-type field-effect transistors - Google Patents

Logic circuits employing junction-type field-effect transistors

Info

Publication number
GB1396556A
GB1396556A GB3130272A GB3130272A GB1396556A GB 1396556 A GB1396556 A GB 1396556A GB 3130272 A GB3130272 A GB 3130272A GB 3130272 A GB3130272 A GB 3130272A GB 1396556 A GB1396556 A GB 1396556A
Authority
GB
United Kingdom
Prior art keywords
windows
contact
diodes
resistor
anodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3130272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1396556A publication Critical patent/GB1396556A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
GB3130272A 1971-07-06 1972-07-04 Logic circuits employing junction-type field-effect transistors Expired GB1396556A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7124683A FR2144574B1 (enrdf_load_stackoverflow) 1971-07-06 1971-07-06

Publications (1)

Publication Number Publication Date
GB1396556A true GB1396556A (en) 1975-06-04

Family

ID=9079899

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3130272A Expired GB1396556A (en) 1971-07-06 1972-07-04 Logic circuits employing junction-type field-effect transistors

Country Status (3)

Country Link
DE (1) DE2233294C2 (enrdf_load_stackoverflow)
FR (1) FR2144574B1 (enrdf_load_stackoverflow)
GB (1) GB1396556A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD40607A (enrdf_load_stackoverflow) *
NL6813833A (enrdf_load_stackoverflow) * 1968-09-27 1970-04-01

Also Published As

Publication number Publication date
FR2144574A1 (enrdf_load_stackoverflow) 1973-02-16
FR2144574B1 (enrdf_load_stackoverflow) 1976-09-17
DE2233294A1 (de) 1973-01-18
DE2233294C2 (de) 1982-05-13

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee