DE2231565A1 - Umsteuerbare zweiphasige ladungsgekoppelte baueinheit - Google Patents
Umsteuerbare zweiphasige ladungsgekoppelte baueinheitInfo
- Publication number
- DE2231565A1 DE2231565A1 DE2231565A DE2231565A DE2231565A1 DE 2231565 A1 DE2231565 A1 DE 2231565A1 DE 2231565 A DE2231565 A DE 2231565A DE 2231565 A DE2231565 A DE 2231565A DE 2231565 A1 DE2231565 A1 DE 2231565A1
- Authority
- DE
- Germany
- Prior art keywords
- charge
- electrodes
- area
- assembly according
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002441 reversible effect Effects 0.000 title description 5
- 238000003860 storage Methods 0.000 claims description 37
- 239000000969 carrier Substances 0.000 claims description 17
- 239000002800 charge carrier Substances 0.000 claims description 12
- 238000012546 transfer Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/474—Two-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15751071A | 1971-06-28 | 1971-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2231565A1 true DE2231565A1 (de) | 1973-01-18 |
Family
ID=22564046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2231565A Pending DE2231565A1 (de) | 1971-06-28 | 1972-06-28 | Umsteuerbare zweiphasige ladungsgekoppelte baueinheit |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3735156A (enExample) |
| BE (1) | BE785470A (enExample) |
| CA (1) | CA951025A (enExample) |
| DE (1) | DE2231565A1 (enExample) |
| FR (1) | FR2143839B1 (enExample) |
| GB (1) | GB1379141A (enExample) |
| IT (1) | IT960282B (enExample) |
| NL (1) | NL7208836A (enExample) |
| SE (1) | SE372991B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2500184A1 (de) * | 1974-01-04 | 1975-07-17 | Commissariat Energie Atomique | Verfahren zum herstellen einer ladungsuebertragungsvorrichtung |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3906542A (en) * | 1972-06-14 | 1975-09-16 | Bell Telephone Labor Inc | Conductively connected charge coupled devices |
| US3838438A (en) * | 1973-03-02 | 1974-09-24 | Bell Telephone Labor Inc | Detection, inversion, and regeneration in charge transfer apparatus |
| US3890635A (en) * | 1973-12-26 | 1975-06-17 | Gen Electric | Variable capacitance semiconductor devices |
| US3890631A (en) * | 1973-12-26 | 1975-06-17 | Gen Electric | Variable capacitance semiconductor devices |
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| DE2532789A1 (de) * | 1975-07-22 | 1977-02-10 | Siemens Ag | Ladungsgekoppelte halbleiteranordnung |
| DE2729657A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
| US4250517A (en) * | 1979-11-30 | 1981-02-10 | Reticon Corporation | Charge transfer, tetrode bucket-brigade device |
| JPH0666344B2 (ja) * | 1984-02-08 | 1994-08-24 | 三洋電機株式会社 | 電荷結合素子 |
| US4598305A (en) * | 1984-06-18 | 1986-07-01 | Xerox Corporation | Depletion mode thin film semiconductor photodetectors |
| JPS61185973A (ja) * | 1985-02-13 | 1986-08-19 | Nec Corp | 半導体装置 |
| KR100192328B1 (ko) * | 1996-04-03 | 1999-06-15 | 구본준 | 양방향 수평전하 전송소자 |
| US11107933B2 (en) * | 2018-03-06 | 2021-08-31 | Teresa Oh | Two-terminal device and lighting device using the same |
-
1971
- 1971-06-28 US US00157510A patent/US3735156A/en not_active Expired - Lifetime
-
1972
- 1972-02-22 CA CA135,276,A patent/CA951025A/en not_active Expired
- 1972-06-19 SE SE7208055A patent/SE372991B/xx unknown
- 1972-06-22 IT IT51083/72A patent/IT960282B/it active
- 1972-06-27 BE BE785470A patent/BE785470A/xx unknown
- 1972-06-27 NL NL7208836A patent/NL7208836A/xx unknown
- 1972-06-27 GB GB3004572A patent/GB1379141A/en not_active Expired
- 1972-06-28 FR FR7223410A patent/FR2143839B1/fr not_active Expired
- 1972-06-28 DE DE2231565A patent/DE2231565A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2500184A1 (de) * | 1974-01-04 | 1975-07-17 | Commissariat Energie Atomique | Verfahren zum herstellen einer ladungsuebertragungsvorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| BE785470A (fr) | 1972-10-16 |
| CA951025A (en) | 1974-07-09 |
| US3735156A (en) | 1973-05-22 |
| IT960282B (it) | 1973-11-20 |
| SE372991B (enExample) | 1975-01-20 |
| GB1379141A (en) | 1975-01-02 |
| FR2143839B1 (enExample) | 1976-10-29 |
| NL7208836A (enExample) | 1973-01-02 |
| FR2143839A1 (enExample) | 1973-02-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |