DE2223734C3 - Monolithische Speicherzelle - Google Patents
Monolithische SpeicherzelleInfo
- Publication number
- DE2223734C3 DE2223734C3 DE2223734A DE2223734A DE2223734C3 DE 2223734 C3 DE2223734 C3 DE 2223734C3 DE 2223734 A DE2223734 A DE 2223734A DE 2223734 A DE2223734 A DE 2223734A DE 2223734 C3 DE2223734 C3 DE 2223734C3
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- field effect
- effect transistor
- memory cell
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 210000000352 storage cell Anatomy 0.000 title claims description 5
- 239000003990 capacitor Substances 0.000 claims description 54
- 210000004027 cell Anatomy 0.000 claims description 27
- 230000005669 field effect Effects 0.000 claims description 25
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15410471A | 1971-06-17 | 1971-06-17 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2223734A1 DE2223734A1 (de) | 1972-12-21 |
| DE2223734B2 DE2223734B2 (de) | 1980-01-10 |
| DE2223734C3 true DE2223734C3 (de) | 1980-09-25 |
Family
ID=22550019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2223734A Expired DE2223734C3 (de) | 1971-06-17 | 1972-05-16 | Monolithische Speicherzelle |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3706891A (enExample) |
| DE (1) | DE2223734C3 (enExample) |
| FR (1) | FR2141937B1 (enExample) |
| GB (1) | GB1369536A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE789501A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur |
| US4163242A (en) * | 1972-11-13 | 1979-07-31 | Siemens Aktiengesellschaft | MOS storage integrated circuit using individual FET elements |
| US4070653A (en) * | 1976-06-29 | 1978-01-24 | Texas Instruments Incorporated | Random access memory cell with ion implanted resistor element |
| US4305139A (en) * | 1979-12-26 | 1981-12-08 | International Business Machines Corporation | State detection for storage cells |
| US4999811A (en) * | 1987-11-30 | 1991-03-12 | Texas Instruments Incorporated | Trench DRAM cell with dynamic gain |
| US4914740A (en) * | 1988-03-07 | 1990-04-03 | International Business Corporation | Charge amplifying trench memory cell |
| US4970689A (en) * | 1988-03-07 | 1990-11-13 | International Business Machines Corporation | Charge amplifying trench memory cell |
| US4910709A (en) * | 1988-08-10 | 1990-03-20 | International Business Machines Corporation | Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell |
| JP2001291389A (ja) * | 2000-03-31 | 2001-10-19 | Hitachi Ltd | 半導体集積回路 |
| US8445946B2 (en) * | 2003-12-11 | 2013-05-21 | International Business Machines Corporation | Gated diode memory cells |
| US20110026323A1 (en) | 2009-07-30 | 2011-02-03 | International Business Machines Corporation | Gated Diode Memory Cells |
| KR101842181B1 (ko) * | 2010-08-04 | 2018-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3454785A (en) * | 1964-07-27 | 1969-07-08 | Philco Ford Corp | Shift register employing insulated gate field effect transistors |
| US3480796A (en) * | 1966-12-14 | 1969-11-25 | North American Rockwell | Mos transistor driver using a control signal |
| US3506851A (en) * | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
| US3513365A (en) * | 1968-06-24 | 1970-05-19 | Mark W Levi | Field-effect integrated circuit and method of fabrication |
| US3586875A (en) * | 1968-09-19 | 1971-06-22 | Electronic Arrays | Dynamic shift and storage register |
| US3582909A (en) * | 1969-03-07 | 1971-06-01 | North American Rockwell | Ratioless memory circuit using conditionally switched capacitor |
| US3619670A (en) * | 1969-11-13 | 1971-11-09 | North American Rockwell | Elimination of high valued {37 p{38 {0 resistors from mos lsi circuits |
| US3593037A (en) * | 1970-03-13 | 1971-07-13 | Intel Corp | Cell for mos random-acess integrated circuit memory |
-
1971
- 1971-06-17 US US154104A patent/US3706891A/en not_active Expired - Lifetime
-
1972
- 1972-04-17 GB GB1753272A patent/GB1369536A/en not_active Expired
- 1972-05-16 DE DE2223734A patent/DE2223734C3/de not_active Expired
- 1972-06-05 FR FR7221476A patent/FR2141937B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2223734B2 (de) | 1980-01-10 |
| GB1369536A (en) | 1974-10-09 |
| FR2141937B1 (enExample) | 1978-03-03 |
| DE2223734A1 (de) | 1972-12-21 |
| FR2141937A1 (enExample) | 1973-01-26 |
| US3706891A (en) | 1972-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |