DE2210386A1 - Thyristor - Google Patents

Thyristor

Info

Publication number
DE2210386A1
DE2210386A1 DE19722210386 DE2210386A DE2210386A1 DE 2210386 A1 DE2210386 A1 DE 2210386A1 DE 19722210386 DE19722210386 DE 19722210386 DE 2210386 A DE2210386 A DE 2210386A DE 2210386 A1 DE2210386 A1 DE 2210386A1
Authority
DE
Germany
Prior art keywords
emitter
base
electrode
zones
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722210386
Other languages
German (de)
English (en)
Inventor
Peter Dr Voss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19722210386 priority Critical patent/DE2210386A1/de
Priority to CH1708972A priority patent/CH551692A/xx
Priority to GB5448472A priority patent/GB1376480A/en
Priority to AT1008372A priority patent/AT318077B/de
Priority to FR7245193A priority patent/FR2173913B1/fr
Priority to IT2091173A priority patent/IT979520B/it
Priority to NL7302892A priority patent/NL7302892A/xx
Priority to CA165,068A priority patent/CA981805A/en
Priority to JP2563773A priority patent/JPS48104477A/ja
Priority to SE7303070A priority patent/SE382284B/xx
Publication of DE2210386A1 publication Critical patent/DE2210386A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE19722210386 1972-03-03 1972-03-03 Thyristor Pending DE2210386A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE19722210386 DE2210386A1 (de) 1972-03-03 1972-03-03 Thyristor
CH1708972A CH551692A (de) 1972-03-03 1972-11-23 Thyristor.
GB5448472A GB1376480A (en) 1972-03-03 1972-11-24 Thyristors
AT1008372A AT318077B (de) 1972-03-03 1972-11-27 Thyristor
FR7245193A FR2173913B1 (fr) 1972-03-03 1972-12-19
IT2091173A IT979520B (it) 1972-03-03 1973-02-27 Tiristore con piu giunzioni pn
NL7302892A NL7302892A (fr) 1972-03-03 1973-03-01
CA165,068A CA981805A (en) 1972-03-03 1973-03-02 Thyristors
JP2563773A JPS48104477A (fr) 1972-03-03 1973-03-02
SE7303070A SE382284B (sv) 1972-03-03 1973-03-05 Tyristor.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722210386 DE2210386A1 (de) 1972-03-03 1972-03-03 Thyristor

Publications (1)

Publication Number Publication Date
DE2210386A1 true DE2210386A1 (de) 1973-09-06

Family

ID=5837869

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722210386 Pending DE2210386A1 (de) 1972-03-03 1972-03-03 Thyristor

Country Status (10)

Country Link
JP (1) JPS48104477A (fr)
AT (1) AT318077B (fr)
CA (1) CA981805A (fr)
CH (1) CH551692A (fr)
DE (1) DE2210386A1 (fr)
FR (1) FR2173913B1 (fr)
GB (1) GB1376480A (fr)
IT (1) IT979520B (fr)
NL (1) NL7302892A (fr)
SE (1) SE382284B (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081691A (fr) * 1973-11-21 1975-07-02
US4063270A (en) * 1975-06-04 1977-12-13 Hitachi, Ltd. Semiconductor controlled rectifier device having amplifying gate structure
US4282542A (en) * 1978-10-09 1981-08-04 Licentia Patent-Verwaltungs-G.M.B.H. Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity
DE3335115A1 (de) * 1982-09-28 1984-05-10 Mitsubishi Denki K.K., Tokio/Tokyo Thyristor mit hoher vorspannungsbelastbarkeit

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2329872C3 (de) * 1973-06-12 1979-04-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081691A (fr) * 1973-11-21 1975-07-02
US4063270A (en) * 1975-06-04 1977-12-13 Hitachi, Ltd. Semiconductor controlled rectifier device having amplifying gate structure
US4282542A (en) * 1978-10-09 1981-08-04 Licentia Patent-Verwaltungs-G.M.B.H. Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity
DE3335115A1 (de) * 1982-09-28 1984-05-10 Mitsubishi Denki K.K., Tokio/Tokyo Thyristor mit hoher vorspannungsbelastbarkeit

Also Published As

Publication number Publication date
CH551692A (de) 1974-07-15
FR2173913A1 (fr) 1973-10-12
NL7302892A (fr) 1973-09-06
JPS48104477A (fr) 1973-12-27
CA981805A (en) 1976-01-13
SE382284B (sv) 1976-01-19
FR2173913B1 (fr) 1977-12-30
IT979520B (it) 1974-09-30
AT318077B (de) 1974-09-25
GB1376480A (en) 1974-12-04

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Legal Events

Date Code Title Description
OHA Expiration of time for request for examination