DE2210386A1 - Thyristor - Google Patents
ThyristorInfo
- Publication number
- DE2210386A1 DE2210386A1 DE2210386A DE2210386A DE2210386A1 DE 2210386 A1 DE2210386 A1 DE 2210386A1 DE 2210386 A DE2210386 A DE 2210386A DE 2210386 A DE2210386 A DE 2210386A DE 2210386 A1 DE2210386 A1 DE 2210386A1
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- base
- electrode
- zones
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
Landscapes
- Thyristors (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2210386A DE2210386A1 (de) | 1972-03-03 | 1972-03-03 | Thyristor |
| CH1708972A CH551692A (de) | 1972-03-03 | 1972-11-23 | Thyristor. |
| GB5448472A GB1376480A (en) | 1972-03-03 | 1972-11-24 | Thyristors |
| AT1008372A AT318077B (de) | 1972-03-03 | 1972-11-27 | Thyristor |
| FR7245193A FR2173913B1 (enrdf_load_stackoverflow) | 1972-03-03 | 1972-12-19 | |
| IT20911/73A IT979520B (it) | 1972-03-03 | 1973-02-27 | Tiristore con piu giunzioni pn |
| NL7302892A NL7302892A (enrdf_load_stackoverflow) | 1972-03-03 | 1973-03-01 | |
| JP48025637A JPS48104477A (enrdf_load_stackoverflow) | 1972-03-03 | 1973-03-02 | |
| CA165,068A CA981805A (en) | 1972-03-03 | 1973-03-02 | Thyristors |
| SE7303070A SE382284B (sv) | 1972-03-03 | 1973-03-05 | Tyristor. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2210386A DE2210386A1 (de) | 1972-03-03 | 1972-03-03 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2210386A1 true DE2210386A1 (de) | 1973-09-06 |
Family
ID=5837869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2210386A Pending DE2210386A1 (de) | 1972-03-03 | 1972-03-03 | Thyristor |
Country Status (10)
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5081691A (enrdf_load_stackoverflow) * | 1973-11-21 | 1975-07-02 | ||
| US4063270A (en) * | 1975-06-04 | 1977-12-13 | Hitachi, Ltd. | Semiconductor controlled rectifier device having amplifying gate structure |
| US4282542A (en) * | 1978-10-09 | 1981-08-04 | Licentia Patent-Verwaltungs-G.M.B.H. | Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity |
| DE3335115A1 (de) * | 1982-09-28 | 1984-05-10 | Mitsubishi Denki K.K., Tokio/Tokyo | Thyristor mit hoher vorspannungsbelastbarkeit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2329872C3 (de) * | 1973-06-12 | 1979-04-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| ZA775629B (en) * | 1976-10-29 | 1978-08-30 | Westinghouse Electric Corp | An improvement in or relating to thyristor fired by collapsing voltage |
-
1972
- 1972-03-03 DE DE2210386A patent/DE2210386A1/de active Pending
- 1972-11-23 CH CH1708972A patent/CH551692A/xx not_active IP Right Cessation
- 1972-11-24 GB GB5448472A patent/GB1376480A/en not_active Expired
- 1972-11-27 AT AT1008372A patent/AT318077B/de active
- 1972-12-19 FR FR7245193A patent/FR2173913B1/fr not_active Expired
-
1973
- 1973-02-27 IT IT20911/73A patent/IT979520B/it active
- 1973-03-01 NL NL7302892A patent/NL7302892A/xx not_active Application Discontinuation
- 1973-03-02 CA CA165,068A patent/CA981805A/en not_active Expired
- 1973-03-02 JP JP48025637A patent/JPS48104477A/ja active Pending
- 1973-03-05 SE SE7303070A patent/SE382284B/xx unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5081691A (enrdf_load_stackoverflow) * | 1973-11-21 | 1975-07-02 | ||
| US4063270A (en) * | 1975-06-04 | 1977-12-13 | Hitachi, Ltd. | Semiconductor controlled rectifier device having amplifying gate structure |
| US4282542A (en) * | 1978-10-09 | 1981-08-04 | Licentia Patent-Verwaltungs-G.M.B.H. | Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity |
| DE3335115A1 (de) * | 1982-09-28 | 1984-05-10 | Mitsubishi Denki K.K., Tokio/Tokyo | Thyristor mit hoher vorspannungsbelastbarkeit |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7302892A (enrdf_load_stackoverflow) | 1973-09-06 |
| IT979520B (it) | 1974-09-30 |
| FR2173913A1 (enrdf_load_stackoverflow) | 1973-10-12 |
| JPS48104477A (enrdf_load_stackoverflow) | 1973-12-27 |
| GB1376480A (en) | 1974-12-04 |
| SE382284B (sv) | 1976-01-19 |
| AT318077B (de) | 1974-09-25 |
| FR2173913B1 (enrdf_load_stackoverflow) | 1977-12-30 |
| CH551692A (de) | 1974-07-15 |
| CA981805A (en) | 1976-01-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHA | Expiration of time for request for examination |