DE2205307A1 - Feldeffekt-Halbleitervorrichtung - Google Patents

Feldeffekt-Halbleitervorrichtung

Info

Publication number
DE2205307A1
DE2205307A1 DE19722205307 DE2205307A DE2205307A1 DE 2205307 A1 DE2205307 A1 DE 2205307A1 DE 19722205307 DE19722205307 DE 19722205307 DE 2205307 A DE2205307 A DE 2205307A DE 2205307 A1 DE2205307 A1 DE 2205307A1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
semiconductor device
region
field effect
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722205307
Other languages
German (de)
English (en)
Inventor
Akio Ikeda; Fujita Takashi Toyonaka; Yamashita (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE2205307A1 publication Critical patent/DE2205307A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 

Landscapes

  • Thyristors (AREA)
DE19722205307 1971-02-08 1972-02-04 Feldeffekt-Halbleitervorrichtung Pending DE2205307A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP547571 1971-02-08

Publications (1)

Publication Number Publication Date
DE2205307A1 true DE2205307A1 (de) 1972-08-24

Family

ID=11612256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722205307 Pending DE2205307A1 (de) 1971-02-08 1972-02-04 Feldeffekt-Halbleitervorrichtung

Country Status (3)

Country Link
DE (1) DE2205307A1 (OSRAM)
FR (1) FR2124542B1 (OSRAM)
NL (1) NL7201558A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0043009A3 (en) * 1980-06-26 1982-11-17 Siemens Aktiengesellschaft Berlin Und Munchen Semiconductor controlled switch
EP0111803A1 (en) * 1982-12-13 1984-06-27 General Electric Company Lateral insulated-gate rectifier structures

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539877A1 (de) * 1965-11-19 1969-12-11 Itt Ind Gmbh Deutsche Schaltbares Halbleiterbauelement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0043009A3 (en) * 1980-06-26 1982-11-17 Siemens Aktiengesellschaft Berlin Und Munchen Semiconductor controlled switch
EP0111803A1 (en) * 1982-12-13 1984-06-27 General Electric Company Lateral insulated-gate rectifier structures

Also Published As

Publication number Publication date
NL7201558A (OSRAM) 1972-08-10
FR2124542B1 (OSRAM) 1976-07-23
FR2124542A1 (OSRAM) 1972-09-22

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