DE2162232A1 - Verfahren zum Herstellen einer Schattenmaske - Google Patents

Verfahren zum Herstellen einer Schattenmaske

Info

Publication number
DE2162232A1
DE2162232A1 DE19712162232 DE2162232A DE2162232A1 DE 2162232 A1 DE2162232 A1 DE 2162232A1 DE 19712162232 DE19712162232 DE 19712162232 DE 2162232 A DE2162232 A DE 2162232A DE 2162232 A1 DE2162232 A1 DE 2162232A1
Authority
DE
Germany
Prior art keywords
layer
shadow mask
conductivity
etching
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712162232
Other languages
German (de)
English (en)
Inventor
Martin Paul Bethlehem Pa.; Mac Rae Alfred Urquhart Mac Berkeley Heights N.J.; Lepselter (V.St.A.). P
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2162232A1 publication Critical patent/DE2162232A1/de
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • H10P30/20—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
DE19712162232 1970-12-28 1971-12-15 Verfahren zum Herstellen einer Schattenmaske Pending DE2162232A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10159270A 1970-12-28 1970-12-28

Publications (1)

Publication Number Publication Date
DE2162232A1 true DE2162232A1 (de) 1972-07-13

Family

ID=22285447

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712162232 Pending DE2162232A1 (de) 1970-12-28 1971-12-15 Verfahren zum Herstellen einer Schattenmaske

Country Status (8)

Country Link
US (1) US3713922A (enExample)
JP (1) JPS5143946B1 (enExample)
BE (1) BE776868A (enExample)
CA (1) CA922025A (enExample)
DE (1) DE2162232A1 (enExample)
FR (1) FR2120026B1 (enExample)
GB (1) GB1377769A (enExample)
IT (1) IT945643B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790412A (en) * 1972-04-07 1974-02-05 Bell Telephone Labor Inc Method of reducing the effects of particle impingement on shadow masks
US3769109A (en) * 1972-04-19 1973-10-30 Bell Telephone Labor Inc PRODUCTION OF SiO{11 {11 TAPERED FILMS
US3968565A (en) * 1972-09-01 1976-07-13 U.S. Philips Corporation Method of manufacturing a device comprising a semiconductor body
US4013502A (en) * 1973-06-18 1977-03-22 Texas Instruments Incorporated Stencil process for high resolution pattern replication
FR2241875B1 (enExample) * 1973-08-21 1977-09-09 Radiotechnique Compelec
US3966577A (en) * 1973-08-27 1976-06-29 Trw Inc. Dielectrically isolated semiconductor devices
US3922184A (en) * 1973-12-26 1975-11-25 Ibm Method for forming openings through insulative layers in the fabrication of integrated circuits
US3962052A (en) * 1975-04-14 1976-06-08 International Business Machines Corporation Process for forming apertures in silicon bodies
US4021276A (en) * 1975-12-29 1977-05-03 Western Electric Company, Inc. Method of making rib-structure shadow mask for ion implantation
US4180439A (en) * 1976-03-15 1979-12-25 International Business Machines Corporation Anodic etching method for the detection of electrically active defects in silicon
US4098638A (en) * 1977-06-14 1978-07-04 Westinghouse Electric Corp. Methods for making a sloped insulator for solid state devices
US4256532A (en) * 1977-07-05 1981-03-17 International Business Machines Corporation Method for making a silicon mask
DE3070833D1 (en) * 1980-09-19 1985-08-08 Ibm Deutschland Structure with a silicon body that presents an aperture and method of making this structure
US4622058A (en) * 1984-06-22 1986-11-11 International Business Machines Corporation Formation of a multi-layer glass-metallized structure formed on and interconnected to multi-layered-metallized ceramic substrate
US4966663A (en) * 1988-09-13 1990-10-30 Nanostructures, Inc. Method for forming a silicon membrane with controlled stress
US5234781A (en) * 1988-11-07 1993-08-10 Fujitsu Limited Mask for lithographic patterning and a method of manufacturing the same
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
US4919749A (en) * 1989-05-26 1990-04-24 Nanostructures, Inc. Method for making high resolution silicon shadow masks
NL8902758A (nl) * 1989-11-08 1991-06-03 Philips Nv Beeldweergave-inrichting en werkwijzen voor het vervaardigen van een beeldweergave-inrichting.
US5154797A (en) * 1991-08-14 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Silicon shadow mask
JP2001185350A (ja) * 1999-12-24 2001-07-06 Sanyo Electric Co Ltd 被着用マスク、その製造方法、エレクトロルミネッセンス表示装置及びその製造方法
RU2209488C2 (ru) * 2001-07-20 2003-07-27 Открытое акционерное общество Арзамасское научно-производственное предприятие "Темп-Авиа" Способ изготовления маски для нанесения тонких слоев в микроструктурах
KR100480705B1 (ko) * 2002-07-03 2005-04-06 엘지전자 주식회사 유기 ｅｌ 소자 제작용 새도우 마스크 및 그 제조 방법
JP6655124B2 (ja) 2018-05-17 2020-02-26 ミネベアミツミ株式会社 荷重検出器、その製造方法、及び荷重検出システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3096262A (en) * 1958-10-23 1963-07-02 Shockley William Method of making thin slices of semiconductive material
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
US3421055A (en) * 1965-10-01 1969-01-07 Texas Instruments Inc Structure and method for preventing spurious growths during epitaxial deposition of semiconductor material
NL153947B (nl) * 1967-02-25 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
GB1186340A (en) * 1968-07-11 1970-04-02 Standard Telephones Cables Ltd Manufacture of Semiconductor Devices

Also Published As

Publication number Publication date
JPS5143946B1 (enExample) 1976-11-25
IT945643B (it) 1973-05-10
FR2120026B1 (enExample) 1977-03-18
BE776868A (fr) 1972-04-17
CA922025A (en) 1973-02-27
GB1377769A (en) 1974-12-18
FR2120026A1 (enExample) 1972-08-11
US3713922A (en) 1973-01-30

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