DE2151898C3 - Ladungstransporteinrichtung - Google Patents

Ladungstransporteinrichtung

Info

Publication number
DE2151898C3
DE2151898C3 DE2151898A DE2151898A DE2151898C3 DE 2151898 C3 DE2151898 C3 DE 2151898C3 DE 2151898 A DE2151898 A DE 2151898A DE 2151898 A DE2151898 A DE 2151898A DE 2151898 C3 DE2151898 C3 DE 2151898C3
Authority
DE
Germany
Prior art keywords
electrode
zone
field plate
electrodes
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2151898A
Other languages
German (de)
English (en)
Other versions
DE2151898A1 (de
DE2151898B2 (de
Inventor
Robert Harold South Plainfield Krambeck
George Elwood Murray Hill Smith
Robert Joseph Plainfield Strain
Michael Francis Summit Tompsett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/114,625 external-priority patent/US4217600A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2151898A1 publication Critical patent/DE2151898A1/de
Publication of DE2151898B2 publication Critical patent/DE2151898B2/de
Application granted granted Critical
Publication of DE2151898C3 publication Critical patent/DE2151898C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/0806—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using charge transfer devices (DTC, CCD)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE2151898A 1970-10-22 1971-10-19 Ladungstransporteinrichtung Expired DE2151898C3 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8295970A 1970-10-22 1970-10-22
US8299370A 1970-10-22 1970-10-22
US11462471A 1971-02-11 1971-02-11
US05/114,625 US4217600A (en) 1970-10-22 1971-02-11 Charge transfer logic apparatus

Publications (3)

Publication Number Publication Date
DE2151898A1 DE2151898A1 (de) 1972-05-18
DE2151898B2 DE2151898B2 (de) 1975-01-30
DE2151898C3 true DE2151898C3 (de) 1975-09-11

Family

ID=27491750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2151898A Expired DE2151898C3 (de) 1970-10-22 1971-10-19 Ladungstransporteinrichtung

Country Status (9)

Country Link
JP (1) JPS5026910B1 (enExample)
BE (1) BE774198A (enExample)
CH (1) CH541207A (enExample)
DE (1) DE2151898C3 (enExample)
FR (1) FR2111771B1 (enExample)
IE (1) IE35684B1 (enExample)
IT (1) IT942728B (enExample)
NL (1) NL163060C (enExample)
SE (1) SE370153B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2264125A1 (de) * 1971-12-29 1973-07-19 Hitachi Ltd Ladungsgekoppelte halbleitereinrichtung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988773A (en) * 1970-10-28 1976-10-26 General Electric Company Self-registered surface charge receive and regeneration devices and methods
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
US3806772A (en) * 1972-02-07 1974-04-23 Fairchild Camera Instr Co Charge coupled amplifier
US3777186A (en) * 1972-07-03 1973-12-04 Ibm Charge transfer logic device
CA1105139A (en) * 1976-12-08 1981-07-14 Ronald E. Crochiere Charge transfer device having linear differential charge-splitting input
JPS5842080U (ja) * 1981-09-16 1983-03-19 凸版印刷株式会社 証券

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2264125A1 (de) * 1971-12-29 1973-07-19 Hitachi Ltd Ladungsgekoppelte halbleitereinrichtung

Also Published As

Publication number Publication date
IT942728B (it) 1973-04-02
FR2111771B1 (enExample) 1976-09-03
DE2151898A1 (de) 1972-05-18
IE35684B1 (en) 1976-04-28
NL7114503A (enExample) 1972-04-25
DE2151898B2 (de) 1975-01-30
JPS5026910B1 (enExample) 1975-09-04
NL163060B (nl) 1980-02-15
AU3413271A (en) 1973-04-05
IE35684L (en) 1972-04-22
BE774198A (fr) 1972-02-14
CH541207A (de) 1973-08-31
NL163060C (nl) 1980-07-15
FR2111771A1 (enExample) 1972-06-09
SE370153B (enExample) 1974-09-30

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977