JPS5026910B1 - - Google Patents

Info

Publication number
JPS5026910B1
JPS5026910B1 JP8388671A JP8388671A JPS5026910B1 JP S5026910 B1 JPS5026910 B1 JP S5026910B1 JP 8388671 A JP8388671 A JP 8388671A JP 8388671 A JP8388671 A JP 8388671A JP S5026910 B1 JPS5026910 B1 JP S5026910B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8388671A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/114,625 external-priority patent/US4217600A/en
Application filed filed Critical
Publication of JPS5026910B1 publication Critical patent/JPS5026910B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/0806Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using charge transfer devices (DTC, CCD)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP8388671A 1970-10-22 1971-10-22 Pending JPS5026910B1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8299370A 1970-10-22 1970-10-22
US8295970A 1970-10-22 1970-10-22
US11462471A 1971-02-11 1971-02-11
US05/114,625 US4217600A (en) 1970-10-22 1971-02-11 Charge transfer logic apparatus

Publications (1)

Publication Number Publication Date
JPS5026910B1 true JPS5026910B1 (ja) 1975-09-04

Family

ID=27491750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8388671A Pending JPS5026910B1 (ja) 1970-10-22 1971-10-22

Country Status (9)

Country Link
JP (1) JPS5026910B1 (ja)
BE (1) BE774198A (ja)
CH (1) CH541207A (ja)
DE (1) DE2151898C3 (ja)
FR (1) FR2111771B1 (ja)
IE (1) IE35684B1 (ja)
IT (1) IT942728B (ja)
NL (1) NL163060C (ja)
SE (1) SE370153B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842080U (ja) * 1981-09-16 1983-03-19 凸版印刷株式会社 証券

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988773A (en) * 1970-10-28 1976-10-26 General Electric Company Self-registered surface charge receive and regeneration devices and methods
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
JPS5318155B2 (ja) * 1971-12-29 1978-06-13
US3806772A (en) * 1972-02-07 1974-04-23 Fairchild Camera Instr Co Charge coupled amplifier
US3777186A (en) * 1972-07-03 1973-12-04 Ibm Charge transfer logic device
CA1105139A (en) * 1976-12-08 1981-07-14 Ronald E. Crochiere Charge transfer device having linear differential charge-splitting input

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842080U (ja) * 1981-09-16 1983-03-19 凸版印刷株式会社 証券

Also Published As

Publication number Publication date
AU3413271A (en) 1973-04-05
BE774198A (fr) 1972-02-14
DE2151898A1 (de) 1972-05-18
IE35684L (en) 1972-04-22
CH541207A (de) 1973-08-31
SE370153B (ja) 1974-09-30
DE2151898B2 (de) 1975-01-30
NL163060C (nl) 1980-07-15
IE35684B1 (en) 1976-04-28
NL163060B (nl) 1980-02-15
NL7114503A (ja) 1972-04-25
FR2111771A1 (ja) 1972-06-09
IT942728B (it) 1973-04-02
DE2151898C3 (de) 1975-09-11
FR2111771B1 (ja) 1976-09-03

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