DE2139101A1 - Emphasen Taktsignalgenerator mit Feldeffek\transistor - Google Patents
Emphasen Taktsignalgenerator mit Feldeffek\transistorInfo
- Publication number
- DE2139101A1 DE2139101A1 DE19712139101 DE2139101A DE2139101A1 DE 2139101 A1 DE2139101 A1 DE 2139101A1 DE 19712139101 DE19712139101 DE 19712139101 DE 2139101 A DE2139101 A DE 2139101A DE 2139101 A1 DE2139101 A1 DE 2139101A1
- Authority
- DE
- Germany
- Prior art keywords
- phase
- clock signal
- field effect
- effect transistor
- control electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 103
- 239000003990 capacitor Substances 0.000 claims description 16
- 238000011144 upstream manufacturing Methods 0.000 claims 7
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 2
- 241000158147 Sator Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/04—Shaping pulses by increasing duration; by decreasing duration
- H03K5/05—Shaping pulses by increasing duration; by decreasing duration by the use of clock signals or other time reference signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/135—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manipulation Of Pulses (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6745970A | 1970-08-27 | 1970-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2139101A1 true DE2139101A1 (de) | 1972-03-02 |
Family
ID=22076131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712139101 Pending DE2139101A1 (de) | 1970-08-27 | 1971-08-04 | Emphasen Taktsignalgenerator mit Feldeffek\transistor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3629618A (enExample) |
| JP (1) | JPS5213385B1 (enExample) |
| CA (1) | CA935229A (enExample) |
| DE (1) | DE2139101A1 (enExample) |
| FR (1) | FR2106079A5 (enExample) |
| GB (1) | GB1327314A (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3789239A (en) * | 1971-07-12 | 1974-01-29 | Teletype Corp | Signal boost for shift register |
| US3743862A (en) * | 1971-08-19 | 1973-07-03 | Texas Instruments Inc | Capacitively coupled load control |
| US3774053A (en) * | 1971-12-17 | 1973-11-20 | North American Rockwell | Clamping arrangement for reducing the effects of noise in field effect transistor logic circuits |
| US3714466A (en) * | 1971-12-22 | 1973-01-30 | North American Rockwell | Clamp circuit for bootstrap field effect transistor |
| GB1375958A (en) * | 1972-06-29 | 1974-12-04 | Ibm | Pulse circuit |
| CH558111A (de) * | 1972-07-21 | 1975-01-15 | Battelle Memorial Institute | Circuit generateur de signaux comprenant un oscillateur a quartz delivrant des signaux periodiques biphases et un demultiplicateur de la frequence de ces signaux. |
| FR2195876B1 (enExample) * | 1972-08-12 | 1976-05-28 | Ibm | |
| JPS4971860A (enExample) * | 1972-11-10 | 1974-07-11 | ||
| US3845324A (en) * | 1972-12-22 | 1974-10-29 | Teletype Corp | Dual voltage fet inverter circuit with two level biasing |
| US3808468A (en) * | 1972-12-29 | 1974-04-30 | Ibm | Bootstrap fet driven with on-chip power supply |
| US3764823A (en) * | 1972-12-29 | 1973-10-09 | Ibm | Timed true and complement generator |
| US3843954A (en) * | 1972-12-29 | 1974-10-22 | Ibm | High-voltage integrated driver circuit and memory embodying same |
| US3903431A (en) * | 1973-12-28 | 1975-09-02 | Teletype Corp | Clocked dynamic inverter |
| US4401904A (en) * | 1980-03-24 | 1983-08-30 | Texas Instruments Incorporated | Delay circuit used in semiconductor memory device |
| DE3026951A1 (de) * | 1980-07-16 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | Treiberstufe in integrierter mos-schaltkreistechnik mit grossem ausgangssignalverhaeltnis |
| US5148058A (en) * | 1990-12-03 | 1992-09-15 | Thomson, S.A. | Logic circuits as for amorphous silicon self-scanned matrix arrays |
| JP4901830B2 (ja) * | 2008-09-16 | 2012-03-21 | 株式会社東芝 | 固液分離器 |
| CN108242221B (zh) * | 2016-12-27 | 2023-10-17 | 无锡中微爱芯电子有限公司 | 一种集成于mcu中的低功耗高驱动lcd偏压驱动电路 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506851A (en) * | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
| US3524077A (en) * | 1968-02-28 | 1970-08-11 | Rca Corp | Translating information with multi-phase clock signals |
| US3502908A (en) * | 1968-09-23 | 1970-03-24 | Shell Oil Co | Transistor inverter circuit |
| US3536936A (en) * | 1968-10-10 | 1970-10-27 | Gen Instrument Corp | Clock generator |
-
1970
- 1970-02-27 US US67459*A patent/US3629618A/en not_active Expired - Lifetime
-
1971
- 1971-06-28 CA CA116768A patent/CA935229A/en not_active Expired
- 1971-07-27 GB GB3530971A patent/GB1327314A/en not_active Expired
- 1971-08-04 DE DE19712139101 patent/DE2139101A1/de active Pending
- 1971-08-17 JP JP46062521A patent/JPS5213385B1/ja active Pending
- 1971-08-26 FR FR7130990A patent/FR2106079A5/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2106079A5 (enExample) | 1972-04-28 |
| JPS475461A (enExample) | 1972-03-21 |
| US3629618A (en) | 1971-12-21 |
| GB1327314A (en) | 1973-08-22 |
| JPS5213385B1 (enExample) | 1977-04-14 |
| CA935229A (en) | 1973-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2139101A1 (de) | Emphasen Taktsignalgenerator mit Feldeffek\transistor | |
| DE69319512T2 (de) | Spannungswandlerschaltung | |
| DE68912979T2 (de) | CMOS-Spannungsmultiplikator. | |
| DE69406250T2 (de) | Konstantspannungsgeneratorschaltung mit Spannungsvervielfachungsschaltung | |
| DE2642431C2 (enExample) | ||
| DE2525075C3 (de) | Spannungs-Vervielfacherschaltung | |
| DE69408665T2 (de) | Spannungserhöher vom Ladungspumpentype | |
| DE69111113T2 (de) | Kondensator-Ladungspumpen. | |
| DE69424764T2 (de) | Ladungspumpenschaltung | |
| EP0010137A1 (de) | Substratvorspannungs-Generatorschaltung | |
| DE2143093C2 (de) | Mehrphasenfeldeffekttransistor- Steuerungsschaltung | |
| DE2225315B2 (de) | Mehrphasen-taktgeber | |
| DE2323858A1 (de) | Monolithisch integrierbare quarzoszillatorschaltung | |
| DE2639555A1 (de) | Elektrische integrierte schaltung in einem halbleiterchip | |
| DE2316619A1 (de) | Halbleiterschaltung | |
| DE10032260B4 (de) | Schaltungsanordnung zur Verdoppelung der Spannung einer Batterie | |
| DE3237778A1 (de) | Dynamisches schieberegister | |
| DE2812378C2 (de) | Substratvorspannungsgenerator für integrierte MIS-Schaltkreise | |
| DE69226021T2 (de) | Treiberschaltung für einen elektronischen Schalter | |
| DE102013106376B4 (de) | Massefreier Vorspannungsgenerator | |
| DE3338206C2 (enExample) | ||
| DE2538453C2 (de) | Überstromschutzschaltung für einen Gegentakt-Leistungsverstärker | |
| EP0494713B1 (de) | Schaltungsanordnung zur Erzeugung einer höheren Gleichspannung | |
| DE69113414T2 (de) | Integrierte Konstantstromversorgung. | |
| DE2224738A1 (de) | Schaltungsanordnung zur Vermeidung unkontrollierter Ausgangssignale in Iso herschicht FET Treiberschaltungen |