DE2128304C3 - Elektrisch schaltbares Halbleiterbauelement - Google Patents

Elektrisch schaltbares Halbleiterbauelement

Info

Publication number
DE2128304C3
DE2128304C3 DE2128304A DE2128304A DE2128304C3 DE 2128304 C3 DE2128304 C3 DE 2128304C3 DE 2128304 A DE2128304 A DE 2128304A DE 2128304 A DE2128304 A DE 2128304A DE 2128304 C3 DE2128304 C3 DE 2128304C3
Authority
DE
Germany
Prior art keywords
layer
area
inner layer
conductivity type
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2128304A
Other languages
German (de)
English (en)
Other versions
DE2128304A1 (de
DE2128304B2 (de
Inventor
Takuzo Ogawa
Tomoyuki Tanaka
Tsutomu Yatsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2128304A1 publication Critical patent/DE2128304A1/de
Publication of DE2128304B2 publication Critical patent/DE2128304B2/de
Application granted granted Critical
Publication of DE2128304C3 publication Critical patent/DE2128304C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DE2128304A 1970-06-08 1971-06-07 Elektrisch schaltbares Halbleiterbauelement Expired DE2128304C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45048769A JPS5019437B1 (enExample) 1970-06-08 1970-06-08

Publications (3)

Publication Number Publication Date
DE2128304A1 DE2128304A1 (de) 1971-12-16
DE2128304B2 DE2128304B2 (de) 1977-08-11
DE2128304C3 true DE2128304C3 (de) 1979-08-09

Family

ID=12812470

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2128304A Expired DE2128304C3 (de) 1970-06-08 1971-06-07 Elektrisch schaltbares Halbleiterbauelement

Country Status (2)

Country Link
JP (1) JPS5019437B1 (enExample)
DE (1) DE2128304C3 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089024A (en) * 1972-09-20 1978-05-09 Hitachi, Ltd. Semiconductor switching device
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
US4021837A (en) * 1975-04-21 1977-05-03 Hutson Jearld L Symmetrical semiconductor switch having carrier lifetime degrading structure
JPS5284226U (enExample) * 1975-12-19 1977-06-23
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5516541A (en) * 1978-07-21 1980-02-05 Toshiba Corp Reverse-conducting gate turn-off thyristor circuit
FR2462022A1 (fr) * 1979-07-24 1981-02-06 Silicium Semiconducteur Ssc Procede de diffusion localisee d'or dans une plaquette semi-conductrice et composants semi-conducteurs obtenus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA845885A (en) * 1967-08-21 1970-06-30 E. Burke Donald Semiconductor switching device
JPS4930392A (enExample) * 1972-07-18 1974-03-18

Also Published As

Publication number Publication date
DE2128304A1 (de) 1971-12-16
JPS5019437B1 (enExample) 1975-07-07
DE2128304B2 (de) 1977-08-11

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)