DE2119772A1 - Halbleiterbauelement - Google Patents
HalbleiterbauelementInfo
- Publication number
- DE2119772A1 DE2119772A1 DE19712119772 DE2119772A DE2119772A1 DE 2119772 A1 DE2119772 A1 DE 2119772A1 DE 19712119772 DE19712119772 DE 19712119772 DE 2119772 A DE2119772 A DE 2119772A DE 2119772 A1 DE2119772 A1 DE 2119772A1
- Authority
- DE
- Germany
- Prior art keywords
- anode
- energy
- semiconductor material
- cathode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 65
- 239000000463 material Substances 0.000 claims description 57
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 48
- 230000007704 transition Effects 0.000 claims description 11
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 8
- 229910000673 Indium arsenide Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010561 standard procedure Methods 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- ARKRHQVMXVUCGN-UHFFFAOYSA-N arsane phosphane Chemical compound P.[AsH3] ARKRHQVMXVUCGN-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000010181 polygamy Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/005—Antimonides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
Landscapes
- Junction Field-Effect Transistors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1935070 | 1970-04-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2119772A1 true DE2119772A1 (de) | 1971-12-16 |
Family
ID=10127886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712119772 Pending DE2119772A1 (de) | 1970-04-22 | 1971-04-22 | Halbleiterbauelement |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3667003A (enExample) |
| CA (1) | CA948790A (enExample) |
| DE (1) | DE2119772A1 (enExample) |
| FR (1) | FR2092073B1 (enExample) |
| GB (1) | GB1354511A (enExample) |
| NL (1) | NL7105412A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1450998A (en) * | 1974-03-29 | 1976-09-29 | Secr Defence | Transferred electron devices |
| FR2293069A1 (fr) * | 1974-11-29 | 1976-06-25 | Thomson Csf | Dispositif hyperfrequence a effet gunn |
| GB1529853A (en) * | 1975-05-13 | 1978-10-25 | Secr Defence | Transferred electron devices |
| FR2385227A1 (fr) * | 1977-03-25 | 1978-10-20 | Thomson Csf | Dispositif a effet gunn modulable par impulsions codees, et convertisseur numerique parallele-serie utilisant un tel dispositif |
| US4396931A (en) * | 1981-06-12 | 1983-08-02 | International Business Machines Corporation | Tunnel emitter upper valley transistor |
| FR2601507B1 (fr) * | 1986-07-09 | 1988-10-07 | Thomson Csf | Diode a transfert d'electrons, a regions balistiques periodiques |
-
1970
- 1970-04-22 GB GB1935070A patent/GB1354511A/en not_active Expired
-
1971
- 1971-04-21 NL NL7105412A patent/NL7105412A/xx unknown
- 1971-04-21 US US136152A patent/US3667003A/en not_active Expired - Lifetime
- 1971-04-21 FR FR7114234A patent/FR2092073B1/fr not_active Expired
- 1971-04-21 CA CA110,934A patent/CA948790A/en not_active Expired
- 1971-04-22 DE DE19712119772 patent/DE2119772A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA948790A (en) | 1974-06-04 |
| FR2092073A1 (enExample) | 1972-01-21 |
| NL7105412A (enExample) | 1971-10-26 |
| GB1354511A (en) | 1974-06-05 |
| US3667003A (en) | 1972-05-30 |
| FR2092073B1 (enExample) | 1975-01-17 |
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