DE2112481A1 - Integrierbare bistabile Stufe mit MOS-Feldeffekttransistoren - Google Patents
Integrierbare bistabile Stufe mit MOS-FeldeffekttransistorenInfo
- Publication number
- DE2112481A1 DE2112481A1 DE19712112481 DE2112481A DE2112481A1 DE 2112481 A1 DE2112481 A1 DE 2112481A1 DE 19712112481 DE19712112481 DE 19712112481 DE 2112481 A DE2112481 A DE 2112481A DE 2112481 A1 DE2112481 A1 DE 2112481A1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- mos field
- mos
- fet
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 10
- 239000003990 capacitor Substances 0.000 claims description 27
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712112481 DE2112481A1 (de) | 1971-03-16 | 1971-03-16 | Integrierbare bistabile Stufe mit MOS-Feldeffekttransistoren |
| NL7114588A NL7114588A (enExample) | 1971-03-16 | 1971-10-22 | |
| GB354872A GB1323980A (en) | 1971-03-16 | 1972-01-26 | Bistable transistor circuit arrangements |
| US00224182A US3735155A (en) | 1971-03-16 | 1972-02-07 | Integrated bistable stage having mos field effect transistors |
| IT21671/72A IT950061B (it) | 1971-03-16 | 1972-03-10 | Stadio bistabile integrabile com prendente transistori mos a effet to di campo |
| FR7208984A FR2129684A5 (enExample) | 1971-03-16 | 1972-03-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712112481 DE2112481A1 (de) | 1971-03-16 | 1971-03-16 | Integrierbare bistabile Stufe mit MOS-Feldeffekttransistoren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2112481A1 true DE2112481A1 (de) | 1972-09-21 |
Family
ID=5801643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712112481 Pending DE2112481A1 (de) | 1971-03-16 | 1971-03-16 | Integrierbare bistabile Stufe mit MOS-Feldeffekttransistoren |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3735155A (enExample) |
| DE (1) | DE2112481A1 (enExample) |
| FR (1) | FR2129684A5 (enExample) |
| GB (1) | GB1323980A (enExample) |
| IT (1) | IT950061B (enExample) |
| NL (1) | NL7114588A (enExample) |
-
1971
- 1971-03-16 DE DE19712112481 patent/DE2112481A1/de active Pending
- 1971-10-22 NL NL7114588A patent/NL7114588A/xx unknown
-
1972
- 1972-01-26 GB GB354872A patent/GB1323980A/en not_active Expired
- 1972-02-07 US US00224182A patent/US3735155A/en not_active Expired - Lifetime
- 1972-03-10 IT IT21671/72A patent/IT950061B/it active
- 1972-03-15 FR FR7208984A patent/FR2129684A5/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1323980A (en) | 1973-07-18 |
| IT950061B (it) | 1973-06-20 |
| US3735155A (en) | 1973-05-22 |
| FR2129684A5 (enExample) | 1972-10-27 |
| NL7114588A (enExample) | 1972-09-19 |
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