DE2112184A1 - Halbleitereinrichtung - Google Patents
HalbleitereinrichtungInfo
- Publication number
- DE2112184A1 DE2112184A1 DE19712112184 DE2112184A DE2112184A1 DE 2112184 A1 DE2112184 A1 DE 2112184A1 DE 19712112184 DE19712112184 DE 19712112184 DE 2112184 A DE2112184 A DE 2112184A DE 2112184 A1 DE2112184 A1 DE 2112184A1
- Authority
- DE
- Germany
- Prior art keywords
- terminal
- transistor
- voltage
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 230000015556 catabolic process Effects 0.000 claims description 28
- 230000033228 biological regulation Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/18—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Nonlinear Science (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
- Bipolar Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2130870A | 1970-03-20 | 1970-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2112184A1 true DE2112184A1 (de) | 1971-10-07 |
Family
ID=21803482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712112184 Pending DE2112184A1 (de) | 1970-03-20 | 1971-03-13 | Halbleitereinrichtung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS463370A (enrdf_load_stackoverflow) |
| DE (1) | DE2112184A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2083467A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1344136A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013221900A1 (de) * | 2013-10-29 | 2015-04-30 | Robert Bosch Gmbh | Überspannungsschutzschaltung für einen Leistungshalbleiter und Verfahren zum Schutz eines Leistungshalbleiters vor Überspannungen |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533846A (en) * | 1979-01-24 | 1985-08-06 | Xicor, Inc. | Integrated circuit high voltage clamping systems |
| DE3930697A1 (de) * | 1989-09-14 | 1991-03-28 | Bosch Gmbh Robert | Steuerbare temperaturkompensierte spannungsbegrenzungseinrichtung |
| DE102017214292A1 (de) * | 2017-08-16 | 2019-02-21 | Robert Bosch Gmbh | Elektronische Schaltvorrichtung, Verfahren zum Betreiben einer elektronischen Schaltvorrichtung und Steuergerät |
-
1970
- 1970-03-20 JP JP1574171A patent/JPS463370A/ja active Pending
-
1971
- 1971-03-13 DE DE19712112184 patent/DE2112184A1/de active Pending
- 1971-03-19 FR FR7109809A patent/FR2083467A1/fr not_active Withdrawn
- 1971-04-19 GB GB2460571*A patent/GB1344136A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013221900A1 (de) * | 2013-10-29 | 2015-04-30 | Robert Bosch Gmbh | Überspannungsschutzschaltung für einen Leistungshalbleiter und Verfahren zum Schutz eines Leistungshalbleiters vor Überspannungen |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS463370A (enrdf_load_stackoverflow) | 1971-10-29 |
| FR2083467A1 (enrdf_load_stackoverflow) | 1971-12-17 |
| GB1344136A (en) | 1974-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2653724C3 (de) | Schaltung mit einem speichernden Halbleiter-Bauelement | |
| DE2257846C3 (de) | Integrierte Halbleiteranordnung zum Schutz gegen Überspannung | |
| DE2837028C2 (enrdf_load_stackoverflow) | ||
| DE2439875C2 (de) | Halbleiterbauelement mit negativer Widerstandscharakteristik | |
| DE2544438A1 (de) | Integrierte ueberspannungs-schutzschaltung | |
| DE69508735T2 (de) | Vor Überströmen geschützter Leistungsschalter | |
| DE69117897T2 (de) | Programmierbare Schutzschaltung und deren monolitische Ausführung | |
| EP0071916B1 (de) | Leistungs-MOS-Feldeffekttransistor und Verfahren zu seiner Herstellung | |
| DE1564048C3 (de) | Halbleiterschalter für niedrige Schaltspannungen | |
| DE3880661T2 (de) | Eingangsschutzstruktur für integrierte Schaltung. | |
| EP0174473B1 (de) | Monolitisch integrierte Leistungsendstufe | |
| DE3888462T2 (de) | Verfahren zur Herstellung einer gegen Überspannungen selbst-geschützten Halbleiteranordnung. | |
| DE1762435B2 (de) | Hochverstaerkende integrierte verstarkerschaltung mit einem mos feldeffekttransistor | |
| DE2112184A1 (de) | Halbleitereinrichtung | |
| DE1955272A1 (de) | Spannungsregler und Verfahren der Spannungsregelung | |
| DE2629468A1 (de) | Temperaturkompensierter oszillator | |
| DE2007627A1 (de) | Verfahren zum Herstellen einer inte gnerten Festkörperschaltung | |
| DE3879557T2 (de) | Halbleiteranordnung mit einer Ladungsübertragungsanordnung. | |
| DE1075746B (de) | Vorrichtung zur Temperaturkompensation eines Flächentransistors | |
| DE3785575T2 (de) | Strombegrenzte halbleiterschaltung. | |
| EP0179099B1 (de) | Monolithisch integrierte planare halbleiteranordnung und verfahren zu deren herstellung | |
| DE2524579C3 (de) | Halbleiter-Logikglied | |
| DE69324621T2 (de) | Vorrichtung mit Substratisolation | |
| DE3735631A1 (de) | Zuendeinrichtung fuer eine brennkraftmaschine | |
| DE2263075A1 (de) | Monolithische integrierte halbleiteranordnung |