DE2106623A1 - Schaltungsanordnung zur Erzeugung eines Spannungssignals mit drei unterschied liehen Pegeln - Google Patents
Schaltungsanordnung zur Erzeugung eines Spannungssignals mit drei unterschied liehen PegelnInfo
- Publication number
- DE2106623A1 DE2106623A1 DE19712106623 DE2106623A DE2106623A1 DE 2106623 A1 DE2106623 A1 DE 2106623A1 DE 19712106623 DE19712106623 DE 19712106623 DE 2106623 A DE2106623 A DE 2106623A DE 2106623 A1 DE2106623 A1 DE 2106623A1
- Authority
- DE
- Germany
- Prior art keywords
- level
- voltage
- transistor
- reference signal
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 6
- 230000004044 response Effects 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000009429 distress Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1082970A | 1970-02-12 | 1970-02-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2106623A1 true DE2106623A1 (de) | 1971-08-19 |
Family
ID=21747646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712106623 Pending DE2106623A1 (de) | 1970-02-12 | 1971-02-12 | Schaltungsanordnung zur Erzeugung eines Spannungssignals mit drei unterschied liehen Pegeln |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3604952A (enExample) |
| JP (1) | JPS5218536B1 (enExample) |
| DE (1) | DE2106623A1 (enExample) |
| FR (1) | FR2078499A5 (enExample) |
| GB (1) | GB1330679A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3736522A (en) * | 1971-06-07 | 1973-05-29 | North American Rockwell | High gain field effect transistor amplifier using field effect transistor circuit as current source load |
| DE2131939C3 (de) * | 1971-06-26 | 1975-11-27 | Ibm Deutschland Gmbh, 7000 Stuttgart | Logisch gesteuerte Inverterstufe |
| US3772607A (en) * | 1972-02-09 | 1973-11-13 | Ibm | Fet interface circuit |
| US3789246A (en) * | 1972-02-14 | 1974-01-29 | Rca Corp | Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations |
| US3806741A (en) * | 1972-05-17 | 1974-04-23 | Standard Microsyst Smc | Self-biasing technique for mos substrate voltage |
| JPS50144372A (enExample) * | 1974-05-09 | 1975-11-20 | ||
| GB1513930A (en) * | 1974-12-20 | 1978-06-14 | Seiko Instr & Electronics | Battery voltage detecting device |
| US4814638A (en) * | 1987-06-08 | 1989-03-21 | Grumman Aerospace Corporation | High speed digital driver with selectable level shifter |
| US4962345A (en) * | 1989-11-06 | 1990-10-09 | Ncr Corporation | Current limiting output driver |
| US5878898A (en) * | 1992-10-14 | 1999-03-09 | Shefflin; Joanne | Protective overcap assembly for fluid containers |
| US8154320B1 (en) * | 2009-03-24 | 2012-04-10 | Lockheed Martin Corporation | Voltage level shifter |
| CN103546142A (zh) * | 2013-10-30 | 2014-01-29 | 中国科学院西安光学精密机械研究所 | 一种ccd专用三电平驱动电路 |
| CN114865908B (zh) * | 2022-05-20 | 2024-06-28 | 广州三晶电气股份有限公司 | 一种i型三电平电路 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3156830A (en) * | 1961-12-22 | 1964-11-10 | Ibm | Three-level asynchronous switching circuit |
| US3407339A (en) * | 1966-05-02 | 1968-10-22 | North American Rockwell | Voltage protection device utilizing a field effect transistor |
| US3446989A (en) * | 1966-08-15 | 1969-05-27 | Motorola Inc | Multiple level logic circuitry |
-
1970
- 1970-02-12 US US10829A patent/US3604952A/en not_active Expired - Lifetime
- 1970-10-20 GB GB4978870A patent/GB1330679A/en not_active Expired
- 1970-12-21 JP JP11434270A patent/JPS5218536B1/ja active Pending
-
1971
- 1971-02-11 FR FR7104660A patent/FR2078499A5/fr not_active Expired
- 1971-02-12 DE DE19712106623 patent/DE2106623A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2078499A5 (enExample) | 1971-11-05 |
| JPS5218536B1 (enExample) | 1977-05-23 |
| US3604952A (en) | 1971-09-14 |
| GB1330679A (en) | 1973-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3931596C2 (enExample) | ||
| DE69216142T2 (de) | Vereinfachte Ausgangspufferschaltung mit niedriger Störspannung | |
| DE2555297C2 (de) | Digitalschaltung mit Feldeffekttransistoren | |
| DE69115983T2 (de) | Schaltungen und Verfahren zur selektiven Umschaltung negativer Spannungen in integrierten CMOS-Schaltungen | |
| DE19950860B4 (de) | Schieberegister | |
| DE4242804C2 (de) | Ladungspumpkreis | |
| DE4037206A1 (de) | Quellspannungssteuerschaltkreis | |
| DE10157997A1 (de) | Ladungspumpschaltung und zugehöriges Betriebsverfahren | |
| DE4321315C1 (de) | Takterzeugungsschaltung für taktgesteuerte Logikschaltungen | |
| DE2106623A1 (de) | Schaltungsanordnung zur Erzeugung eines Spannungssignals mit drei unterschied liehen Pegeln | |
| DE4305864A1 (en) | Output buffer digital driver - has overshoot limiting and changes impedance with output voltage | |
| DE19537203A1 (de) | Leseverstärker | |
| DE102014119097B4 (de) | Spannungsregler mit schneller übergangsreaktion | |
| DE102013106744A1 (de) | Spannungsregelschaltung | |
| EP0496018A1 (de) | Integrierte Schaltung zur Erzeugung eines Reset-Signals | |
| DE10255102B3 (de) | SRAM-Speicherzelle mit Mitteln zur Erzielung eines vom Speicherzustand unabhängigen Leckstroms | |
| DE2643020A1 (de) | Schmitt-trigger | |
| DE19937829A1 (de) | Schaltung, Verfahren und Vorrichtung zum Ausgeben, Eingeben bzw. Empfangen von Daten | |
| DE4431183A1 (de) | Ausgangspuffer | |
| DE69532071T2 (de) | Aufwärtswandlerschaltung | |
| DE69118928T2 (de) | Halbleiterspeicheranordnung und Datenverarbeitungsanordnung und deren Verwendung | |
| DE69209498T2 (de) | Referenzspannungsgenerator für dynamischen Specher mit wahlfreien Zugriff | |
| DE3530092C2 (enExample) | ||
| DE3329096C2 (enExample) | ||
| DE2609714C3 (enExample) |