DE2106412A1 - Verfahren zum Herstellen einer im festen Zustand im wesentlichen homo genen Legierung - Google Patents

Verfahren zum Herstellen einer im festen Zustand im wesentlichen homo genen Legierung

Info

Publication number
DE2106412A1
DE2106412A1 DE19712106412 DE2106412A DE2106412A1 DE 2106412 A1 DE2106412 A1 DE 2106412A1 DE 19712106412 DE19712106412 DE 19712106412 DE 2106412 A DE2106412 A DE 2106412A DE 2106412 A1 DE2106412 A1 DE 2106412A1
Authority
DE
Germany
Prior art keywords
alloy
cooling
liquid
temperature
ampoule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712106412
Other languages
German (de)
English (en)
Inventor
Maurice James Richardson Tex Brau (V St A )
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE2106412A1 publication Critical patent/DE2106412A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19712106412 1970-02-16 1971-02-11 Verfahren zum Herstellen einer im festen Zustand im wesentlichen homo genen Legierung Pending DE2106412A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1164470A 1970-02-16 1970-02-16

Publications (1)

Publication Number Publication Date
DE2106412A1 true DE2106412A1 (de) 1971-09-02

Family

ID=21751355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712106412 Pending DE2106412A1 (de) 1970-02-16 1971-02-11 Verfahren zum Herstellen einer im festen Zustand im wesentlichen homo genen Legierung

Country Status (4)

Country Link
US (1) US3656944A (enrdf_load_stackoverflow)
DE (1) DE2106412A1 (enrdf_load_stackoverflow)
FR (1) FR2078647A5 (enrdf_load_stackoverflow)
GB (1) GB1316406A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849205A (en) * 1973-08-27 1974-11-19 Texas Instruments Inc Enhancement of solid state recrystallization by induced nucleation
US4011074A (en) * 1974-03-25 1977-03-08 Consortium Fur Elektrochemische Industrie Gmbh Process for preparing a homogeneous alloy
GB2051607B (en) * 1979-07-05 1983-06-29 Philips Electronic Associated Method of making monocrystalline ternary semiconductor material
IL60734A (en) * 1979-08-30 1984-03-30 Santa Barbara Res Center Production of single crystal mercury cadmium telluride
CA1197755A (en) * 1980-05-22 1985-12-10 Robert A. Lancaster Controlled directional solidification of semiconductor alloys
US4654196A (en) * 1983-08-17 1987-03-31 Commissariat A L'energie Atomique Process for producing a polycrystalline alloy
US4582683A (en) * 1984-12-03 1986-04-15 Texas Instruments Incorporated (Hg,Cd,Zn)Te crystal compositions
US9790580B1 (en) * 2013-11-18 2017-10-17 Materion Corporation Methods for making bulk metallic glasses containing metalloids

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL231057A (enrdf_load_stackoverflow) * 1957-09-03
NL265338A (enrdf_load_stackoverflow) * 1960-06-03 1900-01-01
US3335084A (en) * 1964-03-16 1967-08-08 Gen Electric Method for producing homogeneous crystals of mixed semiconductive materials
US3468363A (en) * 1967-10-10 1969-09-23 Texas Instruments Inc Method of producing homogeneous ingots of mercury cadmium telluride

Also Published As

Publication number Publication date
US3656944A (en) 1972-04-18
GB1316406A (en) 1973-05-09
FR2078647A5 (enrdf_load_stackoverflow) 1971-11-05

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Legal Events

Date Code Title Description
OHA Expiration of time for request for examination