DE2062041C3 - Verfahren zur Herstellung von Halbleiterübergängen durch Flüssigphasenepitaxie von festen Lösungen aus n/IV- und IV/Vl-Halbleiterverbindungen - Google Patents

Verfahren zur Herstellung von Halbleiterübergängen durch Flüssigphasenepitaxie von festen Lösungen aus n/IV- und IV/Vl-Halbleiterverbindungen

Info

Publication number
DE2062041C3
DE2062041C3 DE2062041A DE2062041A DE2062041C3 DE 2062041 C3 DE2062041 C3 DE 2062041C3 DE 2062041 A DE2062041 A DE 2062041A DE 2062041 A DE2062041 A DE 2062041A DE 2062041 C3 DE2062041 C3 DE 2062041C3
Authority
DE
Germany
Prior art keywords
semiconductor
composition
compounds
bath
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2062041A
Other languages
German (de)
English (en)
Other versions
DE2062041A1 (de
DE2062041B2 (enExample
Inventor
Michel Chilly-Mazarin Moulin (Frankreich)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE2062041A1 publication Critical patent/DE2062041A1/de
Publication of DE2062041B2 publication Critical patent/DE2062041B2/de
Application granted granted Critical
Publication of DE2062041C3 publication Critical patent/DE2062041C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2919—Materials being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3236—Materials thereof being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/063—Gp II-IV-VI compounds

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
DE2062041A 1969-12-17 1970-12-16 Verfahren zur Herstellung von Halbleiterübergängen durch Flüssigphasenepitaxie von festen Lösungen aus n/IV- und IV/Vl-Halbleiterverbindungen Expired DE2062041C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6943698A FR2071085A5 (enExample) 1969-12-17 1969-12-17

Publications (3)

Publication Number Publication Date
DE2062041A1 DE2062041A1 (de) 1971-06-24
DE2062041B2 DE2062041B2 (enExample) 1979-06-21
DE2062041C3 true DE2062041C3 (de) 1980-02-21

Family

ID=9044715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2062041A Expired DE2062041C3 (de) 1969-12-17 1970-12-16 Verfahren zur Herstellung von Halbleiterübergängen durch Flüssigphasenepitaxie von festen Lösungen aus n/IV- und IV/Vl-Halbleiterverbindungen

Country Status (7)

Country Link
US (1) US3718511A (enExample)
BE (1) BE760375A (enExample)
DE (1) DE2062041C3 (enExample)
FR (1) FR2071085A5 (enExample)
GB (1) GB1340671A (enExample)
LU (1) LU62262A1 (enExample)
NL (1) NL7018330A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925147A (en) * 1971-08-30 1975-12-09 Hughes Aircraft Co Preparation of monocrystalline lead tin telluride
US3770565A (en) * 1972-01-05 1973-11-06 Us Navy Plastic mounting of epitaxially grown iv-vi compound semiconducting films
US3902924A (en) * 1973-08-30 1975-09-02 Honeywell Inc Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof
US4075043A (en) * 1976-09-01 1978-02-21 Rockwell International Corporation Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique
US4273596A (en) * 1978-10-03 1981-06-16 The United States Of America As Represented By The Secretary Of The Army Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager
US4263065A (en) * 1980-03-24 1981-04-21 Rockwell International Corporation Semi-open liquid phase epitaxial growth system
US4315477A (en) * 1980-03-24 1982-02-16 Rockwell International Corporation Semi-open liquid phase epitaxial growth system
JPS575325A (en) * 1980-06-12 1982-01-12 Junichi Nishizawa Semicondoctor p-n junction device and manufacture thereof
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer
US4376663A (en) * 1980-11-18 1983-03-15 The United States Of America As Represented By The Secretary Of The Army Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
DE3722881C2 (de) * 1987-07-10 1995-02-16 Kernforschungsz Karlsruhe Schaltermatrix mit optisch nichtlinearen, z.B. bistabilen, Elementen und Verfahren zur Herstellung derselben
EP1039291A1 (en) * 1999-03-26 2000-09-27 Sony International (Europe) GmbH Optochemical sensor and method for its construction
IL165686A0 (en) * 2002-06-10 2006-01-15 Ii Vi Inc Radiation detector
JP7518785B2 (ja) * 2021-03-08 2024-07-18 株式会社東芝 光電変換素子及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295195B (de) * 1961-12-26 1969-05-14 Minnesota Mining & Mfg Thermoelektrisches Halbleitermaterial

Also Published As

Publication number Publication date
BE760375A (fr) 1971-05-17
DE2062041A1 (de) 1971-06-24
LU62262A1 (enExample) 1971-05-14
NL7018330A (enExample) 1971-06-21
FR2071085A5 (enExample) 1971-09-17
US3718511A (en) 1973-02-27
GB1340671A (en) 1973-12-12
DE2062041B2 (enExample) 1979-06-21

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee