DE2051017C3 - Kristallbeugungsvorrichtung und Verfahren zu deren Herrstellung - Google Patents
Kristallbeugungsvorrichtung und Verfahren zu deren HerrstellungInfo
- Publication number
- DE2051017C3 DE2051017C3 DE19702051017 DE2051017A DE2051017C3 DE 2051017 C3 DE2051017 C3 DE 2051017C3 DE 19702051017 DE19702051017 DE 19702051017 DE 2051017 A DE2051017 A DE 2051017A DE 2051017 C3 DE2051017 C3 DE 2051017C3
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- quartz
- crystalline
- diffraction
- diffraction element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 5
- 239000010453 quartz Substances 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000004304 visual acuity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/062—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements the element being a crystal
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US300070A | 1970-01-15 | 1970-01-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2051017A1 DE2051017A1 (de) | 1971-07-29 |
| DE2051017B2 DE2051017B2 (de) | 1972-12-21 |
| DE2051017C3 true DE2051017C3 (de) | 1974-12-12 |
Family
ID=21703592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702051017 Expired DE2051017C3 (de) | 1970-01-15 | 1970-10-17 | Kristallbeugungsvorrichtung und Verfahren zu deren Herrstellung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5023994B1 (enExample) |
| DE (1) | DE2051017C3 (enExample) |
| FR (1) | FR2080908B1 (enExample) |
| GB (1) | GB1289399A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2881264B1 (fr) * | 2005-01-21 | 2007-06-01 | Commissariat Energie Atomique | Monochromateur a rayon x ou a neutrons |
| CN107807491B (zh) * | 2017-11-02 | 2019-07-12 | 中国工程物理研究院上海激光等离子体研究所 | 一种用于零像散像差的双球面弯晶成像系统及其调节方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3073952A (en) * | 1956-09-11 | 1963-01-15 | Gen Electric | X-ray diffraction apparatus |
-
1970
- 1970-10-17 DE DE19702051017 patent/DE2051017C3/de not_active Expired
- 1970-12-18 JP JP45113197A patent/JPS5023994B1/ja active Pending
- 1970-12-29 GB GB1289399D patent/GB1289399A/en not_active Expired
-
1971
- 1971-01-08 FR FR7100475A patent/FR2080908B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2051017A1 (de) | 1971-07-29 |
| FR2080908A1 (enExample) | 1971-11-26 |
| FR2080908B1 (enExample) | 1974-02-15 |
| JPS5023994B1 (enExample) | 1975-08-12 |
| DE2051017B2 (de) | 1972-12-21 |
| GB1289399A (enExample) | 1972-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SURFACE SCIENCE LABORATORIES, INC., MOUNTAIN VIEW, |
|
| 8328 | Change in the person/name/address of the agent |
Free format text: LIESEGANG, R., DIPL.-ING. DR.-ING., PAT.-ANW., 8000 MUENCHEN |
|
| 8328 | Change in the person/name/address of the agent |
Free format text: REINLAENDER, C., DIPL.-ING. DR.-ING. BERNHARDT, K., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN |
|
| 8328 | Change in the person/name/address of the agent |
Free format text: BERNHARDT, K., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN |