DE2035703C3 - Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht - Google Patents

Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht

Info

Publication number
DE2035703C3
DE2035703C3 DE2035703A DE2035703A DE2035703C3 DE 2035703 C3 DE2035703 C3 DE 2035703C3 DE 2035703 A DE2035703 A DE 2035703A DE 2035703 A DE2035703 A DE 2035703A DE 2035703 C3 DE2035703 C3 DE 2035703C3
Authority
DE
Germany
Prior art keywords
transistor
silicon
irradiation
temperature
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2035703A
Other languages
German (de)
English (en)
Other versions
DE2035703A1 (de
DE2035703B2 (de
Inventor
Rudolf Dipl.-Phys. Baeuerlein
Dieter Uhl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2035703A priority Critical patent/DE2035703C3/de
Priority to NL7109041A priority patent/NL7109041A/xx
Priority to GB3246871A priority patent/GB1310449A/en
Priority to US00162439A priority patent/US3829961A/en
Priority to FR7126056A priority patent/FR2099452B1/fr
Publication of DE2035703A1 publication Critical patent/DE2035703A1/de
Priority to DE19722235069 priority patent/DE2235069C3/de
Priority to NL7307460A priority patent/NL7307460A/xx
Priority to GB3235573A priority patent/GB1408063A/en
Priority to FR7326043A priority patent/FR2193258A2/fr
Priority to US05/416,252 priority patent/US3935033A/en
Publication of DE2035703B2 publication Critical patent/DE2035703B2/de
Application granted granted Critical
Publication of DE2035703C3 publication Critical patent/DE2035703C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/953—Making radiation resistant device

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
DE2035703A 1970-07-18 1970-07-18 Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht Expired DE2035703C3 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE2035703A DE2035703C3 (de) 1970-07-18 1970-07-18 Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht
NL7109041A NL7109041A (https=) 1970-07-18 1971-06-30
GB3246871A GB1310449A (en) 1970-07-18 1971-07-09 Treatment of oxide covered semiconductor devices
US00162439A US3829961A (en) 1970-07-18 1971-07-14 Method of improving the radiation resistance of silicon transistors with a silicon oxide coating
FR7126056A FR2099452B1 (https=) 1970-07-18 1971-07-16
DE19722235069 DE2235069C3 (de) 1972-07-17 Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxid-Deckschicht
NL7307460A NL7307460A (https=) 1970-07-18 1973-05-29
GB3235573A GB1408063A (en) 1970-07-18 1973-06-06 Silicon-based semiconductor devices
FR7326043A FR2193258A2 (https=) 1970-07-18 1973-07-16
US05/416,252 US3935033A (en) 1970-07-18 1973-11-15 Method of improving the radiation resistance of silicon transistors with a silicon oxide coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2035703A DE2035703C3 (de) 1970-07-18 1970-07-18 Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht

Publications (3)

Publication Number Publication Date
DE2035703A1 DE2035703A1 (de) 1972-01-27
DE2035703B2 DE2035703B2 (de) 1973-12-13
DE2035703C3 true DE2035703C3 (de) 1974-07-11

Family

ID=5777150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2035703A Expired DE2035703C3 (de) 1970-07-18 1970-07-18 Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht

Country Status (5)

Country Link
US (1) US3829961A (https=)
DE (1) DE2035703C3 (https=)
FR (1) FR2099452B1 (https=)
GB (1) GB1310449A (https=)
NL (1) NL7109041A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4043836A (en) * 1976-05-03 1977-08-23 General Electric Company Method of manufacturing semiconductor devices
US4163156A (en) * 1976-05-19 1979-07-31 International Business Machines Corporation Method of modifying the performance characteristics of a Josephson junction
JPS5395581A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Manufacture for semiconductor device
US4184896A (en) * 1978-06-06 1980-01-22 The United States Of America As Represented By The Secretary Of The Air Force Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation
US4172228A (en) * 1978-06-30 1979-10-23 Nasa Method for analyzing radiation sensitivity of integrated circuits
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
JPWO2013054788A1 (ja) * 2011-10-14 2015-03-30 住友重機械工業株式会社 荷電粒子線照射システム及び荷電粒子線照射計画方法
CN108362988B (zh) * 2018-02-09 2020-12-29 哈尔滨工业大学 一种抑制双极晶体管低剂量率增强效应的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430043A (en) * 1965-10-08 1969-02-25 Atomic Energy Commission Minimum ionization particle detector produced by gamma ray irradiation
US3570112A (en) * 1967-12-01 1971-03-16 Nat Defence Canada Radiation hardening of insulated gate field effect transistors

Also Published As

Publication number Publication date
DE2035703A1 (de) 1972-01-27
NL7109041A (https=) 1972-01-20
DE2035703B2 (de) 1973-12-13
GB1310449A (en) 1973-03-21
FR2099452A1 (https=) 1972-03-17
US3829961A (en) 1974-08-20
FR2099452B1 (https=) 1977-01-28

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)