FR2099452A1 - - Google Patents
Info
- Publication number
- FR2099452A1 FR2099452A1 FR7126056A FR7126056A FR2099452A1 FR 2099452 A1 FR2099452 A1 FR 2099452A1 FR 7126056 A FR7126056 A FR 7126056A FR 7126056 A FR7126056 A FR 7126056A FR 2099452 A1 FR2099452 A1 FR 2099452A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/953—Making radiation resistant device
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2035703A DE2035703C3 (de) | 1970-07-18 | 1970-07-18 | Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2099452A1 true FR2099452A1 (https=) | 1972-03-17 |
| FR2099452B1 FR2099452B1 (https=) | 1977-01-28 |
Family
ID=5777150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7126056A Expired FR2099452B1 (https=) | 1970-07-18 | 1971-07-16 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3829961A (https=) |
| DE (1) | DE2035703C3 (https=) |
| FR (1) | FR2099452B1 (https=) |
| GB (1) | GB1310449A (https=) |
| NL (1) | NL7109041A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2350693A1 (fr) * | 1976-05-03 | 1977-12-02 | Gen Electric | Procede pour ameliorer les caracteristiques electriques des dispositifs semi-conducteurs |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163156A (en) * | 1976-05-19 | 1979-07-31 | International Business Machines Corporation | Method of modifying the performance characteristics of a Josephson junction |
| JPS5395581A (en) * | 1977-02-02 | 1978-08-21 | Hitachi Ltd | Manufacture for semiconductor device |
| US4184896A (en) * | 1978-06-06 | 1980-01-22 | The United States Of America As Represented By The Secretary Of The Air Force | Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation |
| US4172228A (en) * | 1978-06-30 | 1979-10-23 | Nasa | Method for analyzing radiation sensitivity of integrated circuits |
| US4903094A (en) * | 1986-08-26 | 1990-02-20 | General Electric Company | Memory cell structure having radiation hardness |
| JPWO2013054788A1 (ja) * | 2011-10-14 | 2015-03-30 | 住友重機械工業株式会社 | 荷電粒子線照射システム及び荷電粒子線照射計画方法 |
| CN108362988B (zh) * | 2018-02-09 | 2020-12-29 | 哈尔滨工业大学 | 一种抑制双极晶体管低剂量率增强效应的方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3430043A (en) * | 1965-10-08 | 1969-02-25 | Atomic Energy Commission | Minimum ionization particle detector produced by gamma ray irradiation |
| US3570112A (en) * | 1967-12-01 | 1971-03-16 | Nat Defence Canada | Radiation hardening of insulated gate field effect transistors |
-
1970
- 1970-07-18 DE DE2035703A patent/DE2035703C3/de not_active Expired
-
1971
- 1971-06-30 NL NL7109041A patent/NL7109041A/xx unknown
- 1971-07-09 GB GB3246871A patent/GB1310449A/en not_active Expired
- 1971-07-14 US US00162439A patent/US3829961A/en not_active Expired - Lifetime
- 1971-07-16 FR FR7126056A patent/FR2099452B1/fr not_active Expired
Non-Patent Citations (4)
| Title |
|---|
| (REVUE AMERICAINE IEEE TRANSACTIONS ON NUCLEAR SCIENCE VOL.NS17 DECEMBRE 1970"INVESTIGATIONS OF THE SURFACE IONIZATION EFFECT ON PLANAR SILICON BIPOLAR TRANSISTOR AND THE IMPORVEMENT OF THE RESISTANCE TO RADIATION BY AN IRRADIATION ANNEALING TREATMENT"R.BAUERLEIN PAGES 52-61.) * |
| RESISTANCE TO RADIATION BY AN IRRADIATION ANNEALING TREATMENT"R.BAUERLEIN PAGES 52-61.) * |
| REVUE AMERICAINE IEEE TRANSACTIONS ON NUCLEAR SCIENCE VOL.NS17 DECEMBRE 1970"INVESTIGATIONS OF * |
| THE SURFACE IONIZATION EFFECT ON PLANAR SILICON BIPOLAR TRANSISTOR AND THE IMPORVEMENT OF THE * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2350693A1 (fr) * | 1976-05-03 | 1977-12-02 | Gen Electric | Procede pour ameliorer les caracteristiques electriques des dispositifs semi-conducteurs |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2035703A1 (de) | 1972-01-27 |
| DE2035703C3 (de) | 1974-07-11 |
| NL7109041A (https=) | 1972-01-20 |
| DE2035703B2 (de) | 1973-12-13 |
| GB1310449A (en) | 1973-03-21 |
| US3829961A (en) | 1974-08-20 |
| FR2099452B1 (https=) | 1977-01-28 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |