DE2029702C3 - Pulsierender optischer Sender - Google Patents
Pulsierender optischer SenderInfo
- Publication number
- DE2029702C3 DE2029702C3 DE2029702A DE2029702A DE2029702C3 DE 2029702 C3 DE2029702 C3 DE 2029702C3 DE 2029702 A DE2029702 A DE 2029702A DE 2029702 A DE2029702 A DE 2029702A DE 2029702 C3 DE2029702 C3 DE 2029702C3
- Authority
- DE
- Germany
- Prior art keywords
- optical transmitter
- microwave
- semiconductor
- pulses
- stimulable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000005284 excitation Effects 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 230000002269 spontaneous effect Effects 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000010349 pulsation Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002044 microwave spectrum Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83352269A | 1969-06-16 | 1969-06-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2029702A1 DE2029702A1 (de) | 1971-01-07 |
| DE2029702B2 DE2029702B2 (de) | 1977-10-13 |
| DE2029702C3 true DE2029702C3 (de) | 1978-06-15 |
Family
ID=25264645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2029702A Expired DE2029702C3 (de) | 1969-06-16 | 1970-06-16 | Pulsierender optischer Sender |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3614447A (OSRAM) |
| BE (1) | BE751469A (OSRAM) |
| DE (1) | DE2029702C3 (OSRAM) |
| FR (1) | FR2046795B1 (OSRAM) |
| GB (1) | GB1266084A (OSRAM) |
| NL (1) | NL7008440A (OSRAM) |
| SE (1) | SE367285B (OSRAM) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3729724A (en) * | 1971-06-08 | 1973-04-24 | Ibm | High-density magneto-optic readout apparatus |
| US4317236A (en) * | 1980-02-25 | 1982-02-23 | Bell Telephone Laboratories, Incorporated | Laser digital transmitter |
| JPS59171037A (ja) * | 1983-03-18 | 1984-09-27 | Hitachi Ltd | 半導体レーザの駆動方法及び駆動装置 |
| US4662004A (en) * | 1984-12-17 | 1987-04-28 | Fmw Corporation | Laser communication system |
| US4682053A (en) * | 1985-10-03 | 1987-07-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and means for generation of tunable laser sidebands in the far-infrared region |
| JPH07109911B2 (ja) * | 1989-06-16 | 1995-11-22 | 浜松ホトニクス株式会社 | 光源駆動装置 |
| US5253096A (en) * | 1991-11-07 | 1993-10-12 | Raylan Corporation | Digital pulse optical transmitter and receiver for local area network applications |
| JPH06222087A (ja) * | 1993-01-27 | 1994-08-12 | Hamamatsu Photonics Kk | 電圧検出装置 |
| CN115441296B (zh) * | 2022-09-01 | 2024-11-12 | 中国人民解放军国防科技大学 | 一种灵巧波形高功率微波产生系统 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3258596A (en) * | 1966-06-28 | Pulse-frequency modulated injection laser | ||
| US3483383A (en) * | 1964-03-11 | 1969-12-09 | Ibm | Optical pulse communication and ranging system by amplitude modulating laser injection source and detecting optical pulse width |
| US3478280A (en) * | 1966-10-14 | 1969-11-11 | Gen Electric | Pulse width modulated laser |
| US3459942A (en) * | 1966-12-05 | 1969-08-05 | Gen Electric | High frequency light source |
-
1969
- 1969-06-16 US US833522A patent/US3614447A/en not_active Expired - Lifetime
-
1970
- 1970-06-04 BE BE751469D patent/BE751469A/xx unknown
- 1970-06-10 NL NL7008440A patent/NL7008440A/xx not_active Application Discontinuation
- 1970-06-10 GB GB1266084D patent/GB1266084A/en not_active Expired
- 1970-06-12 SE SE08181/70A patent/SE367285B/xx unknown
- 1970-06-15 FR FR7021964A patent/FR2046795B1/fr not_active Expired
- 1970-06-16 DE DE2029702A patent/DE2029702C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3614447A (en) | 1971-10-19 |
| DE2029702B2 (de) | 1977-10-13 |
| GB1266084A (OSRAM) | 1972-03-08 |
| FR2046795B1 (OSRAM) | 1974-05-03 |
| DE2029702A1 (de) | 1971-01-07 |
| FR2046795A1 (OSRAM) | 1971-03-12 |
| SE367285B (OSRAM) | 1974-05-20 |
| BE751469A (fr) | 1970-11-16 |
| NL7008440A (OSRAM) | 1970-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |