DE2028657A1 - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- DE2028657A1 DE2028657A1 DE19702028657 DE2028657A DE2028657A1 DE 2028657 A1 DE2028657 A1 DE 2028657A1 DE 19702028657 DE19702028657 DE 19702028657 DE 2028657 A DE2028657 A DE 2028657A DE 2028657 A1 DE2028657 A1 DE 2028657A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- anode
- cathode
- metal
- electron transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 48
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 3
- IBBLRJGOOANPTQ-JKVLGAQCSA-N quinapril hydrochloride Chemical compound Cl.C([C@@H](C(=O)OCC)N[C@@H](C)C(=O)N1[C@@H](CC2=CC=CC=C2C1)C(O)=O)CC1=CC=CC=C1 IBBLRJGOOANPTQ-JKVLGAQCSA-N 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- 239000000758 substrate Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ZWTGPOOQQOEXRH-UHFFFAOYSA-N [Ag].[Ge].[In] Chemical compound [Ag].[Ge].[In] ZWTGPOOQQOEXRH-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB29476/69A GB1286674A (en) | 1969-06-10 | 1969-06-10 | Transferred electron devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2028657A1 true DE2028657A1 (de) | 1970-12-17 |
Family
ID=10292173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702028657 Pending DE2028657A1 (de) | 1969-06-10 | 1970-06-10 | Halbleiteranordnung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3673469A (enrdf_load_stackoverflow) |
| JP (1) | JPS498465B1 (enrdf_load_stackoverflow) |
| DE (1) | DE2028657A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2050992A5 (enrdf_load_stackoverflow) |
| GB (1) | GB1286674A (enrdf_load_stackoverflow) |
| NL (1) | NL7008418A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1439759A (en) * | 1972-11-24 | 1976-06-16 | Mullard Ltd | Semiconductor devices |
| JPS518981U (enrdf_load_stackoverflow) * | 1974-07-05 | 1976-01-22 | ||
| GB1529853A (en) * | 1975-05-13 | 1978-10-25 | Secr Defence | Transferred electron devices |
| JPS51159384U (enrdf_load_stackoverflow) * | 1975-06-13 | 1976-12-18 | ||
| GB9414311D0 (en) * | 1994-07-15 | 1994-09-07 | Philips Electronics Uk Ltd | A transferred electron effect device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3479611A (en) * | 1966-01-21 | 1969-11-18 | Int Standard Electric Corp | Series operated gunn effect devices |
| NL6710184A (enrdf_load_stackoverflow) * | 1967-07-22 | 1969-01-24 | ||
| US3490140A (en) * | 1967-10-05 | 1970-01-20 | Bell Telephone Labor Inc | Methods for making semiconductor devices |
-
1969
- 1969-06-10 GB GB29476/69A patent/GB1286674A/en not_active Expired
-
1970
- 1970-06-09 US US44850A patent/US3673469A/en not_active Expired - Lifetime
- 1970-06-09 FR FR7021199A patent/FR2050992A5/fr not_active Expired
- 1970-06-10 JP JP45050184A patent/JPS498465B1/ja active Pending
- 1970-06-10 NL NL7008418A patent/NL7008418A/xx unknown
- 1970-06-10 DE DE19702028657 patent/DE2028657A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1286674A (en) | 1972-08-23 |
| FR2050992A5 (enrdf_load_stackoverflow) | 1971-04-02 |
| US3673469A (en) | 1972-06-27 |
| NL7008418A (enrdf_load_stackoverflow) | 1970-12-14 |
| JPS498465B1 (enrdf_load_stackoverflow) | 1974-02-26 |
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