DE2012712B2 - Integrierte bistabile kippschaltung mit feldeffekttransistoren - Google Patents

Integrierte bistabile kippschaltung mit feldeffekttransistoren

Info

Publication number
DE2012712B2
DE2012712B2 DE19702012712 DE2012712A DE2012712B2 DE 2012712 B2 DE2012712 B2 DE 2012712B2 DE 19702012712 DE19702012712 DE 19702012712 DE 2012712 A DE2012712 A DE 2012712A DE 2012712 B2 DE2012712 B2 DE 2012712B2
Authority
DE
Germany
Prior art keywords
transistors
mos transistors
enhancement
transistor
circuit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702012712
Other languages
German (de)
English (en)
Other versions
DE2012712A1 (de
Inventor
Karl-Ulrich Dr. 8000 München Stein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19702012712 priority Critical patent/DE2012712B2/de
Priority to CH297271A priority patent/CH515583A/de
Priority to NL7103517A priority patent/NL7103517A/xx
Priority to FR7109272A priority patent/FR2083351A1/fr
Priority to GB2463371*A priority patent/GB1324045A/en
Publication of DE2012712A1 publication Critical patent/DE2012712A1/de
Publication of DE2012712B2 publication Critical patent/DE2012712B2/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19702012712 1970-03-17 1970-03-17 Integrierte bistabile kippschaltung mit feldeffekttransistoren Pending DE2012712B2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19702012712 DE2012712B2 (de) 1970-03-17 1970-03-17 Integrierte bistabile kippschaltung mit feldeffekttransistoren
CH297271A CH515583A (de) 1970-03-17 1971-03-01 Integriertes Speicherelement mit Feldeffekttransistoren
NL7103517A NL7103517A (https=) 1970-03-17 1971-03-16
FR7109272A FR2083351A1 (https=) 1970-03-17 1971-03-17
GB2463371*A GB1324045A (en) 1970-03-17 1971-04-19 Integrated circuit storage elements incorporating field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702012712 DE2012712B2 (de) 1970-03-17 1970-03-17 Integrierte bistabile kippschaltung mit feldeffekttransistoren

Publications (2)

Publication Number Publication Date
DE2012712A1 DE2012712A1 (de) 1971-10-14
DE2012712B2 true DE2012712B2 (de) 1972-11-02

Family

ID=5765365

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702012712 Pending DE2012712B2 (de) 1970-03-17 1970-03-17 Integrierte bistabile kippschaltung mit feldeffekttransistoren

Country Status (5)

Country Link
CH (1) CH515583A (https=)
DE (1) DE2012712B2 (https=)
FR (1) FR2083351A1 (https=)
GB (1) GB1324045A (https=)
NL (1) NL7103517A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539911A1 (de) * 1975-09-08 1977-03-17 Siemens Ag Schwellwertschalter
EP0122371A1 (en) * 1980-05-20 1984-10-24 Kabushiki Kaisha Toshiba Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2014296C (en) * 1989-04-21 2000-08-01 Nobuo Mikoshiba Integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539911A1 (de) * 1975-09-08 1977-03-17 Siemens Ag Schwellwertschalter
EP0122371A1 (en) * 1980-05-20 1984-10-24 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
FR2083351A1 (https=) 1971-12-17
NL7103517A (https=) 1971-09-21
GB1324045A (en) 1973-07-18
DE2012712A1 (de) 1971-10-14
CH515583A (de) 1971-11-15

Similar Documents

Publication Publication Date Title
DE68905269T2 (de) MOS-Transistor und Anwendung bei einer Freilaufdiode.
DE3136682C2 (https=)
DE2356275C2 (de) Halbleiterspeicherelement mit einem Doppelgate-Isolierschicht- FET
DE1514431A1 (de) Halbleiteranordnung mit pn-UEbergang zur Verwendung als spannungsabhaengige Kapazitaet
DE2734539A1 (de) Integrierte halbleiterschaltungsvorrichtung
DE2201028B2 (de) Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens
DE2142721A1 (de) Integrierte bistabile Speicherzelle
DE2363089A1 (de) Speicherzelle mit feldeffekttransistoren
DE2804500A1 (de) Halbleitervorrichtung
DE2158270C3 (de) Kontaktloser Schalter mit einem Feldeffekt-Thyristor
DE2012712B2 (de) Integrierte bistabile kippschaltung mit feldeffekttransistoren
DE1942558A1 (de) Halbleiterschaltung
DE6608098U (de) Steuerbares halbleiterelement.
DE2426447A1 (de) Komplementaere transistorschaltung zur durchfuehrung boole'scher verknuepfungen
DE1807105B2 (de) Treiberschaltung für Flip-Flops
DE2800336A1 (de) Integrierte logische schaltung
DE2152109B2 (de) Speichermatrix mit einem Feldeffekt-Halbleiterbauelement je Speicherplatz
DE2727279A1 (de) Feldeffekttransistor und verfahren zu dessen herstellung
DE1132662B (de) Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone
DE1803175A1 (de) Flip-Flop
DE1171992C2 (de) Transistor mit Dotierung der Basiszone
DE2430947C2 (de) Halbleiterspeichereinheit
DE2001584A1 (de) Feldeffekttransistor
EP0065173A2 (de) Thyristor mit verbessertem Schaltverhalten
DE2444906C3 (de) MNOS-Speicher-FET