DE19983360T1 - Magnetsensor - Google Patents

Magnetsensor

Info

Publication number
DE19983360T1
DE19983360T1 DE19983360T DE19983360T DE19983360T1 DE 19983360 T1 DE19983360 T1 DE 19983360T1 DE 19983360 T DE19983360 T DE 19983360T DE 19983360 T DE19983360 T DE 19983360T DE 19983360 T1 DE19983360 T1 DE 19983360T1
Authority
DE
Germany
Prior art keywords
magnetic sensor
magnetic
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19983360T
Other languages
English (en)
Inventor
Yoshihiko Seyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE19983360T1 publication Critical patent/DE19983360T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
DE19983360T 1998-07-08 1999-06-14 Magnetsensor Withdrawn DE19983360T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10193152A JP2000030222A (ja) 1998-07-08 1998-07-08 磁気センサ
PCT/JP1999/003161 WO2000003387A1 (fr) 1998-07-08 1999-06-14 Capteur magnetique

Publications (1)

Publication Number Publication Date
DE19983360T1 true DE19983360T1 (de) 2001-06-21

Family

ID=16303157

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983360T Withdrawn DE19983360T1 (de) 1998-07-08 1999-06-14 Magnetsensor

Country Status (5)

Country Link
US (1) US6441611B2 (de)
JP (1) JP2000030222A (de)
CN (1) CN1173335C (de)
DE (1) DE19983360T1 (de)
WO (1) WO2000003387A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392922B1 (en) 2000-08-14 2002-05-21 Micron Technology, Inc. Passivated magneto-resistive bit structure and passivation method therefor
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
US6783995B2 (en) 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
US7112454B2 (en) 2003-10-14 2006-09-26 Micron Technology, Inc. System and method for reducing shorting in memory cells
US7019371B2 (en) * 2004-01-26 2006-03-28 Seagate Technology Llc Current-in-plane magnetic sensor including a trilayer structure
CN100587993C (zh) * 2006-12-26 2010-02-03 中国科学院合肥物质科学研究院 巨磁阻磁传感器及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61126618A (ja) * 1984-11-22 1986-06-14 Nippon Telegr & Teleph Corp <Ntt> 磁気抵抗効果薄膜ヘツド
JPH0434713A (ja) * 1990-05-30 1992-02-05 Sony Corp 磁気抵抗効果型薄膜ヘッド
JPH04123306A (ja) * 1990-09-14 1992-04-23 Hitachi Ltd 磁気抵抗効果素子
JPH05151533A (ja) * 1991-11-29 1993-06-18 Victor Co Of Japan Ltd 磁気抵抗効果型薄膜ヘツド
JPH06302877A (ja) * 1993-04-13 1994-10-28 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子及びそれを用いた磁気抵抗効果型薄膜磁気ヘッド
US5446613A (en) * 1994-02-28 1995-08-29 Read-Rite Corporation Magnetic head assembly with MR sensor
JP3045942B2 (ja) * 1994-12-07 2000-05-29 アルプス電気株式会社 薄膜磁気ヘッド
JP3217703B2 (ja) 1995-09-01 2001-10-15 株式会社東芝 磁性体デバイス及びそれを用いた磁気センサ
JPH09270544A (ja) * 1996-03-29 1997-10-14 Sony Corp 巨大磁気抵抗効果素子
JPH10209521A (ja) * 1997-01-23 1998-08-07 Denso Corp 磁気抵抗素子を有する半導体装置
US6114719A (en) * 1998-05-29 2000-09-05 International Business Machines Corporation Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell

Also Published As

Publication number Publication date
WO2000003387A1 (fr) 2000-01-20
JP2000030222A (ja) 2000-01-28
CN1173335C (zh) 2004-10-27
US6441611B2 (en) 2002-08-27
US20010001539A1 (en) 2001-05-24
CN1308758A (zh) 2001-08-15

Similar Documents

Publication Publication Date Title
DE69904168D1 (de) Magnetfeldfühler
DE69808776D1 (de) Magnetfeldfühler
DE69818256D1 (de) Magnetischer positionsgeber
DE69729534D1 (de) Magnetischer Fühler
DE60036628D1 (de) Magnetischer sensor
DE69912887D1 (de) Sensor
DE59811545D1 (de) Messaufnehmer
DE60038383D1 (de) Magnetischer sensor
DE69938221D1 (de) Positionssensor
DE60028472D1 (de) Magnetischer Verschiebungssensor
DE19580281T1 (de) Magnetsensor
DE60037521D1 (de) Magnetischer sensor
DE69816755D1 (de) Magnetischer drehgeber
DE69827818D1 (de) Magnetische kodiereinrichtung
DE69818884D1 (de) Magnetoresistiver Sensor
DE60036629D1 (de) Magnetischer sensor
DE59914478D1 (de) Hallsensor
DE69934776D1 (de) Positionssensor
DE69934868D1 (de) Magnetischer mehrschichtsensor
DE69827011D1 (de) Magnetischer wegsensor
DE60037522D1 (de) Magnetischer sensor
DE19983808T1 (de) Differenz-VGMR-Sensor
DE69811652D1 (de) Magnetische kodiereinrichtung
DE59708731D1 (de) Magnetischer positionssensor
DE69938551D1 (de) Integrierender magnetischer sensor

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8139 Disposal/non-payment of the annual fee