DE19983156T1 - Einkristall-Zuchtvorrichtung und Einkristall-Zuchtverfahren - Google Patents

Einkristall-Zuchtvorrichtung und Einkristall-Zuchtverfahren

Info

Publication number
DE19983156T1
DE19983156T1 DE19983156T DE19983156T DE19983156T1 DE 19983156 T1 DE19983156 T1 DE 19983156T1 DE 19983156 T DE19983156 T DE 19983156T DE 19983156 T DE19983156 T DE 19983156T DE 19983156 T1 DE19983156 T1 DE 19983156T1
Authority
DE
Germany
Prior art keywords
single crystal
crystal growing
growing method
growing device
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19983156T
Other languages
English (en)
Inventor
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Super Silicon Crystal Research Institute Corp
Original Assignee
Super Silicon Crystal Research Institute Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Super Silicon Crystal Research Institute Corp filed Critical Super Silicon Crystal Research Institute Corp
Publication of DE19983156T1 publication Critical patent/DE19983156T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19983156T 1999-02-24 1999-11-24 Einkristall-Zuchtvorrichtung und Einkristall-Zuchtverfahren Withdrawn DE19983156T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP04703399A JP4052753B2 (ja) 1999-02-24 1999-02-24 単結晶成長装置及び単結晶成長方法
PCT/JP1999/006529 WO2000050672A1 (fr) 1999-02-24 1999-11-24 Appareil de croissance de monocristal et procede de croissance associe

Publications (1)

Publication Number Publication Date
DE19983156T1 true DE19983156T1 (de) 2001-05-17

Family

ID=12763873

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983156T Withdrawn DE19983156T1 (de) 1999-02-24 1999-11-24 Einkristall-Zuchtvorrichtung und Einkristall-Zuchtverfahren

Country Status (6)

Country Link
US (1) US6372040B1 (de)
JP (1) JP4052753B2 (de)
KR (1) KR100388884B1 (de)
DE (1) DE19983156T1 (de)
TW (1) TW513492B (de)
WO (1) WO2000050672A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008047599B4 (de) * 2008-09-17 2012-12-20 Siltronic Ag Vorrichtung und Verfahren zum Ziehen eines Einkristalls
DE102009024473B4 (de) * 2009-06-10 2015-11-26 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium und danach hergestellter Einkristall

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
GB9412629D0 (en) * 1994-06-23 1994-08-10 Secr Defence Improvements in crystal growth
WO1998010125A1 (fr) * 1996-09-03 1998-03-12 Sumitomo Metal Industries, Ltd. Appareil pour tirage de monocristal
JP3718921B2 (ja) * 1996-09-18 2005-11-24 信越半導体株式会社 単結晶保持方法および単結晶成長方法
JPH10120487A (ja) * 1996-10-15 1998-05-12 Komatsu Electron Metals Co Ltd 単結晶引上装置および引上方法
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
KR19980079892A (ko) * 1997-03-28 1998-11-25 모리 레이자로 단결정 인상장치
DE19939715B4 (de) * 1999-08-21 2008-07-24 Crystal Growing Systems Gmbh Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer

Also Published As

Publication number Publication date
JP2000247786A (ja) 2000-09-12
US6372040B1 (en) 2002-04-16
JP4052753B2 (ja) 2008-02-27
KR20010042071A (ko) 2001-05-25
WO2000050672A1 (fr) 2000-08-31
TW513492B (en) 2002-12-11
KR100388884B1 (ko) 2003-06-25

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8139 Disposal/non-payment of the annual fee