DE19954093A1 - Anordnung für Hochleistungslaser - Google Patents

Anordnung für Hochleistungslaser

Info

Publication number
DE19954093A1
DE19954093A1 DE19954093A DE19954093A DE19954093A1 DE 19954093 A1 DE19954093 A1 DE 19954093A1 DE 19954093 A DE19954093 A DE 19954093A DE 19954093 A DE19954093 A DE 19954093A DE 19954093 A1 DE19954093 A1 DE 19954093A1
Authority
DE
Germany
Prior art keywords
gain
laser radiation
gain element
radiation
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19954093A
Other languages
German (de)
English (en)
Inventor
Christian Hanke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE19954093A priority Critical patent/DE19954093A1/de
Priority to PCT/DE2000/003979 priority patent/WO2001035504A2/fr
Publication of DE19954093A1 publication Critical patent/DE19954093A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
DE19954093A 1999-11-10 1999-11-10 Anordnung für Hochleistungslaser Withdrawn DE19954093A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19954093A DE19954093A1 (de) 1999-11-10 1999-11-10 Anordnung für Hochleistungslaser
PCT/DE2000/003979 WO2001035504A2 (fr) 1999-11-10 2000-11-07 Ensemble pour laser a grande puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19954093A DE19954093A1 (de) 1999-11-10 1999-11-10 Anordnung für Hochleistungslaser

Publications (1)

Publication Number Publication Date
DE19954093A1 true DE19954093A1 (de) 2001-05-23

Family

ID=7928563

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19954093A Withdrawn DE19954093A1 (de) 1999-11-10 1999-11-10 Anordnung für Hochleistungslaser

Country Status (2)

Country Link
DE (1) DE19954093A1 (fr)
WO (1) WO2001035504A2 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003007444A1 (fr) * 2001-07-12 2003-01-23 Textron Systems Corporation Laser en zigzag a semi-conducteur et amplificateur optique
DE102004040080A1 (de) * 2004-07-29 2006-02-16 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiter-Laservorrichtung
DE102006061532A1 (de) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit mehreren monolithisch integrierten Laserdioden
US7433376B1 (en) 2006-08-07 2008-10-07 Textron Systems Corporation Zig-zag laser with improved liquid cooling
WO2015055600A1 (fr) * 2013-10-16 2015-04-23 Koninklijke Philips N.V. Dispositif laser compact
JP2017147256A (ja) * 2016-02-15 2017-08-24 株式会社リコー 光増幅器、光増幅器の駆動方法及び光増幅方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007100341A2 (fr) * 2005-04-29 2007-09-07 Massachusetts Institute Of Technology Systeme laser a semi-conducteur a plaque a incidence rasante et procede correspondant
US7801195B2 (en) * 2008-02-14 2010-09-21 Koninklijke Philips Electronics N.V. Electrically-pumped semiconductor zigzag extended cavity surface emitting lasers and superluminescent LEDs

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992014287A1 (fr) * 1991-02-12 1992-08-20 Massachusetts Institute Of Technology Systeme laser a semi-conducteurs a cavite externe
US5365536A (en) * 1992-07-20 1994-11-15 Toyota Jidosha Kabushiki Kaisha Semiconductor laser
WO1995007566A1 (fr) * 1993-09-10 1995-03-16 Telefonaktiebolaget Lm Ericsson Dispositif laser a emission superficielle dote d'une cavite verticale
JPH08162717A (ja) * 1994-12-07 1996-06-21 Mitsubishi Heavy Ind Ltd 面発光半導体レーザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555595A (en) * 1978-10-19 1980-04-23 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor light amplifier
JPH01289287A (ja) * 1988-05-17 1989-11-21 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体光増幅素子
US5696786A (en) * 1993-04-15 1997-12-09 The United States Of America As Represented By The Secretary Of The Air Force Solid-state laser system
SE501723C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Optisk förstärkningsanordning samt användning av anordningen
DE59900742D1 (de) * 1998-01-30 2002-02-28 Osram Opto Semiconductors Gmbh Halbleiterlaser-chip

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992014287A1 (fr) * 1991-02-12 1992-08-20 Massachusetts Institute Of Technology Systeme laser a semi-conducteurs a cavite externe
US5365536A (en) * 1992-07-20 1994-11-15 Toyota Jidosha Kabushiki Kaisha Semiconductor laser
WO1995007566A1 (fr) * 1993-09-10 1995-03-16 Telefonaktiebolaget Lm Ericsson Dispositif laser a emission superficielle dote d'une cavite verticale
JPH08162717A (ja) * 1994-12-07 1996-06-21 Mitsubishi Heavy Ind Ltd 面発光半導体レーザ

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Appl.Phys.Lett., Vol. 41, No. 6, 1982, S. 499-501 *
Appl.Phys.Lett., Vol. 71, No. 26,1997,S.3752-3754 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003007444A1 (fr) * 2001-07-12 2003-01-23 Textron Systems Corporation Laser en zigzag a semi-conducteur et amplificateur optique
DE102004040080A1 (de) * 2004-07-29 2006-02-16 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiter-Laservorrichtung
DE102004040080B4 (de) * 2004-07-29 2010-05-12 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiter-Laservorrichtung
US7433376B1 (en) 2006-08-07 2008-10-07 Textron Systems Corporation Zig-zag laser with improved liquid cooling
DE102006061532A1 (de) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit mehreren monolithisch integrierten Laserdioden
US7646799B2 (en) 2006-09-28 2010-01-12 Osram Opto Semiconductors Gmbh Edge emitting semiconductor laser comprising a plurality of monolithically integrated laser diodes
WO2015055600A1 (fr) * 2013-10-16 2015-04-23 Koninklijke Philips N.V. Dispositif laser compact
JP2016533639A (ja) * 2013-10-16 2016-10-27 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． コンパクトなレーザーデバイス
US10116119B2 (en) 2013-10-16 2018-10-30 Koninklijke Philips N.V. Compact laser device
US10707646B2 (en) 2013-10-16 2020-07-07 Trumpf Photonic Components Gmbh Compact laser device
JP2017147256A (ja) * 2016-02-15 2017-08-24 株式会社リコー 光増幅器、光増幅器の駆動方法及び光増幅方法

Also Published As

Publication number Publication date
WO2001035504A3 (fr) 2001-12-06
WO2001035504A2 (fr) 2001-05-17

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8139 Disposal/non-payment of the annual fee